Материал: 1n5819
DISCRETE SEMICONDUCTORS
page
M3D119
1N5817; 1N5818; 1N5819
Schottky barrier diodes
Product specification |
1996 May 03 |
Supersedes data of April 1992
File under Discrete Semiconductors, SC01
Philips Semiconductors |
Product specification |
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Schottky barrier diodes |
1N5817; 1N5818; 1N5819 |
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FEATURES
∙Low switching losses
∙Fast recovery time
∙Guard ring protected
∙Hermetically sealed leaded glass package.
APPLICATIONS
∙Low power, switched-mode power supplies
∙Rectifying
∙Polarity protection.
DESCRIPTION
The 1N5817 to 1N5819 types are Schottky barrier diodes fabricated in planar technology, and encapsulated in SOD81 hermetically sealed glass packages incorporating ImplotecTM(1) technology.
(1) Implotec is a trademark of Philips.
handbook, 4 columns |
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MAM218
Fig.1 Simplified outline (SOD81) and symbol.
1996 May 03 |
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Philips Semiconductors |
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Product specification |
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Schottky barrier diodes |
1N5817; 1N5818; 1N5819 |
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LIMITING VALUES |
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In accordance with the Absolute Maximum Rating System (IEC 134). |
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SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
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MAX. |
UNIT |
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VR |
continuous reverse voltage |
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1N5817 |
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− |
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20 |
V |
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1N5818 |
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− |
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30 |
V |
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1N5819 |
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− |
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40 |
V |
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VRSM |
non-repetitive peak reverse voltage |
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1N5817 |
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− |
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24 |
V |
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1N5818 |
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− |
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36 |
V |
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1N5819 |
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− |
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48 |
V |
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VRRM |
repetitive peak reverse voltage |
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1N5817 |
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− |
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20 |
V |
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1N5818 |
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− |
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30 |
V |
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1N5819 |
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− |
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40 |
V |
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VRWM |
crest working reverse voltage |
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1N5817 |
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− |
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20 |
V |
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1N5818 |
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− |
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30 |
V |
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1N5819 |
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− |
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40 |
V |
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IF(AV) |
average forward current |
Tamb = 55 °C; Rth j-a = 100 K/W; |
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1 |
A |
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note 1; VR(equiv) = 0.2 V; note 2 |
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IFSM |
non-repetitive peak forward current |
t = 8.3 ms half sine wave; |
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25 |
A |
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JEDEC method; |
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Tj = Tj max prior to surge: VR = 0 |
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Tstg |
storage temperature |
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−65 |
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+175 |
°C |
Tj |
junction temperature |
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125 |
°C |
Notes
1.Refer to SOD81 standard mounting conditions.
2.For Schottky barrier diodes thermal run-away has to be considered, as in some applications, the reverse power
losses PR are a significant part of the total power losses. Nomograms for determination of the reverse power losses PR and IF(AV) rating will be available on request.
1996 May 03 |
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Philips Semiconductors |
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Product specification |
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Schottky barrier diodes |
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1N5817; 1N5818; 1N5819 |
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ELECTRICAL CHARACTERISTICS |
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Tamb = 25 °C; unless otherwise specified. |
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SYMBOL |
PARAMETER |
CONDITIONS |
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MIN. |
TYP. |
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MAX. |
UNIT |
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VF |
forward voltage |
see Fig.2 |
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1N5817 |
IF = 0.1 A |
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− |
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320 |
mV |
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IF = 1 A |
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450 |
mV |
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IF = 3 A |
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− |
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750 |
mV |
VF |
forward voltage |
see Fig.2 |
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1N5818 |
IF = 0.1 A |
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− |
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330 |
mV |
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IF = 1 A |
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550 |
mV |
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IF = 3 A |
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875 |
mV |
VF |
forward voltage |
see Fig.2 |
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1N5819 |
IF = 0.1 A |
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− |
− |
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340 |
mV |
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IF = 1 A |
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− |
− |
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600 |
mV |
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IF = 3 A |
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− |
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900 |
mV |
IR |
reverse current |
VR = VRRMmax; note 1 |
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1 |
mA |
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VR = VRRMmax; Tj = 100 °C |
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10 |
mA |
Cd |
diode capacitance |
VR = 4 V; f = 1 MHz |
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1N5817 |
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80 |
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pF |
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1N5818 |
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− |
50 |
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pF |
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1N5819 |
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− |
50 |
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pF |
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Note
1. Pulsed test: tp = 300 μs; δ = 0.02.
THERMAL CHARACTERISTICS
SYMBOL |
PARAMETER |
CONDITIONS |
VALUE |
UNIT |
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Rth j-a |
thermal resistance from junction to ambient |
note 1 |
100 |
K/W |
Note |
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1. Refer to SOD81 standard mounting conditions.
1996 May 03 |
4 |
Philips Semiconductors |
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Product specification |
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Schottky barrier diodes |
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1N5817; 1N5818; 1N5819 |
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GRAPHICAL DATA |
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MBE634 |
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handbook, halfpage |
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IF |
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(A) |
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Tj |
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= 125 |
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oC |
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25 o |
C |
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0.5 |
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VF (V) |
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0 |
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1 |
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Fig.2 Typical forward voltage.
MBE642
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a = 3 |
2.5 |
2 |
1.57 |
1.42 |
1 |
PF(AV)
(W)
0.5
0 |
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0 |
0.5 |
1 |
1.5 |
IF(AV) |
(A) |
2 |
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Fig.3 1N817. Maximum values steady state forward power dissipation as a function of the average forward current; a = IF(RMS)/IF(AV).
1996 May 03 |
5 |