Материал: 2N6426RE
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N6426/D
Darlington Transistors
NPN Silicon
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COLLECTOR 3 |
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BASE |
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2 |
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EMITTER 1 |
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MAXIMUM RATINGS |
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Rating |
Symbol |
Value |
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Unit |
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Collector± Emitter Voltage |
VCEO |
40 |
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Vdc |
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Collector± Base Voltage |
VCBO |
40 |
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Vdc |
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Emitter± Base Voltage |
VEBO |
12 |
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Vdc |
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Collector Current Ð Continuous |
IC |
500 |
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mAdc |
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Total Device Dissipation @ TA = 25°C |
PD |
625 |
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mW |
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Derate above 25°C |
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5.0 |
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mW/°C |
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Total Device Dissipation @ TC = 25°C |
PD |
1.5 |
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Watts |
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Derate above 25°C |
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12 |
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mW/°C |
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Operating and Storage Junction |
TJ, Tstg |
± 55 to +150 |
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°C |
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Temperature Range |
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THERMAL CHARACTERISTICS |
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Characteristic |
Symbol |
Max |
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Unit |
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Thermal Resistance, Junction to |
RqJA |
200 |
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°C/W |
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Ambient |
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Thermal Resistance, Junction to Case |
RqJC |
83.3 |
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°C/W |
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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
2N6426*
2N6427
*Motorola Preferred Device
1
2 3
CASE 29±04, STYLE 1 TO±92 (TO±226AA)
Characteristic |
Symbol |
Min |
Typ |
Max |
Unit |
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OFF CHARACTERISTICS
Collector± Emitter Breakdown Voltage (1) |
V |
40 |
Ð |
Ð |
Vdc |
(IC = 10 mAdc, VBE = 0) |
(BR)CEO |
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Collector± Base Breakdown Voltage |
V(BR)CBO |
40 |
Ð |
Ð |
Vdc |
(IC = 100 mAdc, IE = 0) |
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Emitter± Base Breakdown Voltage |
V(BR)EBO |
12 |
Ð |
Ð |
Vdc |
(IE = 10 mAdc, IC = 0) |
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Collector Cutoff Current |
ICES |
Ð |
Ð |
1.0 |
mAdc |
(VCE = 25 Vdc, IB = 0) |
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Collector Cutoff Current |
ICBO |
Ð |
Ð |
50 |
nAdc |
(VCB= 30 Vdc, IE = 0) |
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Emitter Cutoff Current |
IEBO |
Ð |
Ð |
50 |
nAdc |
(VEB= 10 Vdc, IC = 0) |
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1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%. |
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Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola, Inc. 1996
2N6426 |
2N6427 |
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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) |
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Characteristic |
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Symbol |
Min |
Typ |
Max |
Unit |
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ON CHARACTERISTICS |
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DC Current Gain(1) |
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hFE |
20,000 |
Ð |
200,000 |
Ð |
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(IC = 10 mAdc, VCE = 5.0 Vdc) |
2N6426 |
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2N6427 |
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10,000 |
Ð |
100,000 |
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(IC = 100 mAdc, VCE = 5.0 Vdc) |
2N6426 |
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30,000 |
Ð |
300,000 |
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2N6427 |
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20,000 |
Ð |
200,000 |
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(IC = 500 mAdc, VCE = 5.0 Vdc) |
2N6426 |
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20,000 |
Ð |
200,000 |
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2N6427 |
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14,000 |
Ð |
140,000 |
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Collector± Emitter Saturation Voltage |
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VCE(sat) |
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Vdc |
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(IC = 50 mAdc, IB = 0.5 mAdc) |
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Ð |
0.71 |
1.2 |
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(IC = 500 mAdc, IB = 0.5 mAdc |
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Ð |
0.9 |
1.5 |
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Base ± Emitter Saturation Voltage |
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VBE(sat) |
Ð |
1.52 |
2.0 |
Vdc |
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(IC = 500 mAdc, IB = 0.5 mAdc) |
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Base ± Emitter On Voltage |
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VBE(on) |
Ð |
1.24 |
1.75 |
Vdc |
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(IC = 50 mAdc, VCE = 5.0 Vdc) |
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SMALL± SIGNAL CHARACTERISTICS |
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Output Capacitance |
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Cobo |
Ð |
5.4 |
7.0 |
pF |
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(VCB = 10 Vdc, IE = 0, f = 1.0 MHz) |
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Input Capacitance |
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Cibo |
Ð |
10 |
15 |
pF |
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(VEB = 1.0 Vdc, IC = 0, f = 1.0 MHz) |
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Input Impedance |
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hie |
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kΩ |
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(IC = 10 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) |
2N6426 |
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100 |
Ð |
2000 |
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2N6427 |
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50 |
Ð |
1000 |
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Small±Signal Current Gain |
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hfe |
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Ð |
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(IC = 10 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) |
2N6426 |
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20,000 |
Ð |
Ð |
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2N6427 |
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10,000 |
Ð |
Ð |
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Current± Gain Ð High Frequency |
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|hfe| |
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Ð |
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(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) |
2N6426 |
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1.5 |
2.4 |
Ð |
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2N6427 |
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1.3 |
2.4 |
Ð |
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Output Admittance |
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hoe |
Ð |
Ð |
1000 |
mmhos |
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(IC = 10 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) |
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Noise Figure |
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NF |
Ð |
3.0 |
10 |
dB |
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(IC = 1.0 mAdc, VCE = 5.0 Vdc, RS = 100 kΩ, f = 1.0 kHz) |
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1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%. |
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RS |
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in |
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IDEAL |
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TRANSISTOR |
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Figure 1. Transistor Noise Model
2 |
Motorola Small±Signal Transistors, FETs and Diodes Device Data |
2N6426 2N6427
NOISE CHARACTERISTICS
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(VCE = 5.0 Vdc, TA = 25°C) |
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500 |
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BANDWIDTH = 1.0 Hz |
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2.0 |
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BANDWIDTH = 1.0 Hz |
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200 |
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RS ≈ 0 |
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1.0 |
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(nV) |
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(pA) |
0.7 |
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0.5 |
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IC = 1.0 mA |
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, NOISE VOLTAGE |
100 |
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,NOISE CURRENT |
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0.3 |
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10 |
μ |
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A |
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50 |
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0.2 |
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100 μA |
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0.1 |
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100 μA |
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20 |
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n |
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n |
0.07 |
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IC = 1.0 mA |
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10 |
μA |
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0.05 |
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0.03 |
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5.0 |
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0.02 |
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10 |
20 |
50 |
100 200 |
500 |
1 k 2 k |
5 k 10 k 20 k |
50 k 100 k |
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20 |
50 |
100 200 |
500 |
1 k 2 k |
5 k |
10 k 20 k |
50 k 100 k |
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f, FREQUENCY (Hz) |
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f, FREQUENCY (Hz) |
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Figure 2. Noise Voltage |
Figure 3. Noise Current |
(nV) |
200 |
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14 |
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BANDWIDTH = 10 Hz TO 15.7 kHz |
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VOLTAGE |
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BANDWIDTH = 10 Hz TO 15.7 kHz |
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12 |
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100 |
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(dB) |
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10 |
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70 |
IC = 10 μA |
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10 μA |
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TOTAL WIDEBAND NOISE |
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NF, NOISE FIGURE |
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50 |
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8.0 |
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100 μA |
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6.0 |
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30 |
100 μA |
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20 |
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4.0 |
IC = 1.0 mA |
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1.0 mA |
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2.0 |
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, |
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T |
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V |
10 |
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0 |
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2.0 |
5.0 |
10 |
20 |
50 |
100 |
200 |
500 |
100 |
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2.0 |
5.0 |
10 |
20 |
50 |
100 |
200 |
500 |
100 |
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1.0 |
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1.0 |
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Ω |
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Ω |
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0 |
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RS, SOURCE RESISTANCE (k |
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RS, SOURCE RESISTANCE (k |
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Figure 4. Total Wideband Noise Voltage |
Figure 5. Wideband Noise Figure |
Motorola Small±Signal Transistors, FETs and Diodes Device Data |
3 |
2N6426 2N6427
SMALL±SIGNALCHARACTERISTICS
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20 |
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10 |
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TJ = 25°C |
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(pF) |
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C, CAPACITANCE |
7.0 |
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Cibo |
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5.0 |
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Cobo |
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3.0 |
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2.0 |
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0.04 |
0.1 |
0.2 |
0.4 |
1.0 |
2.0 |
4.0 |
10 |
20 |
40 |
VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Capacitance
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4.0 |
VCE = 5.0 V |
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GAIN |
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f = 100 MHz |
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2.0 |
TJ = 25°C |
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CURRENT |
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1.0 |
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SMALL±SIGNAL |
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0.8 |
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0.6 |
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0.4 |
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fe |
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0.2 |
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0.5 |
1.0 |
2.0 |
0.5 |
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500 |
IC, COLLECTOR CURRENT (mA)
Figure 7. High Frequency Current Gain
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200 k |
TJ = 125°C |
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(VOLTS) |
3.0 |
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100 k |
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TJ = 25°C |
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VOLTAGE |
2.5 |
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CURRENT GAIN |
70 k |
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IC = |
10 mA |
50 mA |
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250 mA |
500 mA |
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25°C |
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50 k |
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30 k |
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2.0 |
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20 k |
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1.5 |
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, DC |
10 k |
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COLLECTOR±EMITTER |
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FE |
7.0 k |
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± 55°C |
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5.0 k |
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1.0 |
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VCE = 5.0 V |
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3.0 k |
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CE |
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2.0 k |
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0.5 |
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V |
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5.0 |
7.0 |
10 |
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0.1 |
0.2 |
0.5 |
1.0 |
2.0 |
5.0 |
10 |
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50 |
100 |
200 |
500 1000 |
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IC, COLLECTOR CURRENT (mA) |
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IB, BASE CURRENT (μA) |
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Figure 8. DC Current Gain |
Figure 9. Collector Saturation Region |
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1.6 |
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TJ = 25°C |
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1.4 |
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(VOLTS) |
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VBE(sat) @ IC/IB = 1000 |
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1.2 |
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V, VOLTAGE |
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VBE(on) @ VCE = 5.0 V |
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1.0 |
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0.8 |
VCE(sat) @ IC/IB = 1000 |
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0.6 |
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5.0 |
7.0 |
10 |
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70 |
100 200 300 |
500 |
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IC, COLLECTOR CURRENT (mA) |
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Figure 10. ªOnº Voltages
(mV/°C) |
± 1.0 |
*APPLIES FOR IC/IB ≤ hFE/3.0 |
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25°C TO 125°C |
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± 2.0 |
*RqVC FOR VCE(sat) |
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COEFFICIENTS |
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± 55°C TO 25°C |
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± 3.0 |
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25°C TO 125°C |
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, TEMPERATURE |
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± 4.0 |
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qVB FOR VBE |
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± 5.0 |
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± 55°C TO 25°C |
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θV |
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R |
± 6.0 |
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5.0 |
7.0 |
10 |
20 |
30 |
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70 |
100 |
200 |
300 |
500 |
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IC, COLLECTOR CURRENT (mA) |
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Figure 11. Temperature Coefficients
4 |
Motorola Small±Signal Transistors, FETs and Diodes Device Data |
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2N6426 |
2N6427 |
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1.0 |
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0.7 |
D = 0.5 |
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0.5 |
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RESISTANCE (NORMALIZED) |
0.2 |
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r(t), TRANSIENT THERMAL |
0.3 |
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0.2 |
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0.05 |
SINGLE PULSE |
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0.1 |
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0.1 |
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0.07 |
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SINGLE PULSE |
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0.05 |
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0.03 |
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ZθJC(t) = r(t) •RθJC |
TJ(pk) ± TC = P(pk) ZθJC(t) |
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0.02 |
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ZθJA(t) = r(t) •RθJA |
TJ(pk) ± TA = P(pk) ZθJA(t) |
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0.01 |
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10 |
20 |
50 |
100 |
200 |
500 |
1.0 k |
2.0 k |
5.0 k |
10 k |
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0.1 |
0.2 |
0.5 |
1.0 |
2.0 |
5.0 |
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t, TIME (ms)
Figure 12. Thermal Response
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1.0 k |
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FIGURE A |
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700 |
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1.0 ms |
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(mA) |
500 |
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tP |
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300 |
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TC = 25°C |
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CURRENT |
TA = 25°C |
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100 μs |
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PP |
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PP |
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200 |
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1.0 s |
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COLLECTOR, |
100 |
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30 |
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70 |
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50 |
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t1 |
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C |
20 |
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CURRENT LIMIT |
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I |
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THERMAL LIMIT |
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1/f |
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SECOND BREAKDOWN LIMIT |
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f + t1 |
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10 |
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DUTY CYCLE + t |
1 |
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0.4 |
0.6 |
1.0 |
2.0 |
4.0 |
6.0 |
10 |
20 |
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tP |
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VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS) |
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PEAK PULSE POWER = PP |
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Figure 13. Active Region Safe Operating Area |
Design Note: Use of Transient Thermal Resistance Data |
Motorola Small±Signal Transistors, FETs and Diodes Device Data |
5 |