Материал: 9126
Philips Semiconductors |
Product specification |
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Silicon Diffused Power Transistor |
BU2525AX |
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GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.
QUICK REFERENCE DATA
SYMBOL |
PARAMETER |
CONDITIONS |
TYP. |
MAX. |
UNIT |
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VCESM |
Collector-emitter voltage peak value |
VBE = 0 V |
- |
1500 |
V |
VCEO |
Collector-emitter voltage (open base) |
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- |
800 |
V |
IC |
Collector current (DC) |
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- |
12 |
A |
ICM |
Collector current peak value |
Ths ≤ 25 ˚C |
- |
30 |
A |
Ptot |
Total power dissipation |
- |
45 |
W |
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VCEsat |
Collector-emitter saturation voltage |
IC = 8.0 A; IB = 1.6 A |
- |
5.0 |
V |
ICsat |
Collector saturation current |
|
8.0 |
- |
A |
tf |
Fall time |
ICM = 8.0 A; IB(on) = 1.1 A |
0.2 |
- |
μs |
PINNING - TOP3D |
PIN CONFIGURATION |
SYMBOL |
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PIN |
DESCRIPTION |
case |
c |
1 |
base |
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2 |
collector |
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b |
3 |
emitter |
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case |
isolated |
1 2 3 |
e |
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LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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VCESM |
Collector-emitter voltage peak value |
VBE = 0 V |
- |
1500 |
V |
VCEO |
Collector-emitter voltage (open base) |
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- |
800 |
V |
IC |
Collector current (DC) |
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- |
12 |
A |
ICM |
Collector current peak value |
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- |
30 |
A |
IB |
Base current (DC) |
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- |
8 |
A |
IBM |
Base current peak value |
|
- |
12 |
A |
-IB(AV) |
Reverse base current |
average over any 20 ms period |
- |
200 |
mA |
-I |
Reverse base current peak value 1 |
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- |
7 |
A |
BM |
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Ths ≤ 25 ˚C |
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Ptot |
Total power dissipation |
- |
45 |
W |
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Tstg |
Storage temperature |
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-65 |
150 |
˚C |
Tj |
Junction temperature |
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- |
150 |
˚C |
THERMAL RESISTANCES
SYMBOL |
PARAMETER |
CONDITIONS |
TYP. |
MAX. |
UNIT |
Rth j-hs |
Junction to heatsink |
without heatsink compound |
- |
3.7 |
K/W |
Rth j-hs |
Junction to heatsink |
with heatsink compound |
- |
2.8 |
K/W |
Rth j-a |
Junction to ambient |
in free air |
35 |
- |
K/W |
1 Turn-off current.
February 1993 |
1 |
Rev 1.000 |
Philips Semiconductors |
Product specification |
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|
Silicon Diffused Power Transistor |
BU2525AX |
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|
ISOLATION
Ths = 25 ˚C unless otherwise specified
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
Visol |
Repetitive peak voltage from all |
R.H. ≤ 65 % ; clean and dustfree |
- |
- |
2500 |
V |
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three terminals to external |
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heatsink |
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Cisol |
Capacitance from T2 to external |
f = 1 MHz |
- |
22 |
- |
pF |
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heatsink |
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STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL |
PARAMETER |
CONDITIONS |
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MIN. |
TYP. |
MAX. |
UNIT |
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I |
Collector cut-off current 2 |
V = |
0 V; V |
CE |
= V |
CESMmax |
- |
- |
1.0 |
mA |
CES |
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BE |
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ICES |
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VBE = |
0 V; VCE = VCESMmax; |
- |
- |
2.0 |
mA |
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IEBO |
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Tj = 125 ˚C |
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Emitter cut-off current |
VEB = |
7.5 V; IC = 0 A |
- |
- |
1.0 |
mA |
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VCEOsust |
Collector-emitter sustaining voltage |
IB = 0 A; IC = 100 mA; |
800 |
- |
- |
V |
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L = 25 mH |
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VCEsat |
Collector-emitter saturation voltage |
IC = 8.0 A; IB = 1.6 |
A |
- |
- |
5.0 |
V |
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VBEsat |
Base-emitter saturation voltage |
IC = 8.0 A; IB = 1.6 |
A |
- |
- |
1.3 |
V |
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hFE |
DC current gain |
IC = 100 mA; VCE = 5 V |
6 |
13 |
26 |
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hFE |
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IC = 8 A; VCE = 5 V |
5 |
7 |
10 |
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DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL |
PARAMETER |
CONDITIONS |
TYP. |
MAX. |
UNIT |
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Cc |
Collector capacitance |
IE = 0 A; VCB = 10 V; f = 1 MHz |
145 |
- |
pF |
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Switching times (32 kHz line |
ICM = 8.0 A; LC = 260 μH; Cfb = 13 nF; |
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deflection circuit) |
IB(end) = 1.1 A; LB = 2.5 μH; -VBB = 4 V; |
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ts |
Turn-off storage time |
(-dIB/dt = 1.6 A/μs) |
3.0 |
4.0 |
μs |
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tf |
Turn-off fall time |
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0.2 |
0.35 |
μs |
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IC / mA |
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+ 50v |
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100-200R |
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250 |
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Horizontal |
200 |
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Oscilloscope |
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Vertical |
100 |
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100R |
1R |
0 |
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6V |
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min |
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VCE / V |
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30-60 Hz |
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VCEOsust |
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Fig.1. Test circuit for VCEOsust. |
Fig.2. Oscilloscope display for VCEOsust. |
2 Measured with half sine-wave voltage (curve tracer).
February 1993 |
2 |
Rev 1.000 |
Philips Semiconductors |
Product specification |
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Silicon Diffused Power Transistor |
BU2525AX |
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ICM |
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TRANSISTOR |
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IC |
DIODE |
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t |
IB |
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IBon |
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t |
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10us |
13us |
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32us |
VCE |
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t |
Fig.3. Switching times waveforms.
100 |
hFE |
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BU2525AF |
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Tj = 25 C |
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5 V |
Tj = 125 C |
10 |
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1 V |
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1 |
0.1 |
1 |
10 |
100 |
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IC / A |
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Fig.6. Typical DC current gain. hFE = f (IC) parameter VCE
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ICM |
VBESAT / V |
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BU2525AF |
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90 % |
1.2 |
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Tj = 25 C |
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1.1 |
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Tj = 125 C |
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IC |
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1 |
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0.9 |
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10 % |
0.8 |
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tf |
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t |
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ts |
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0.7 |
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IC/IB= |
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IB |
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IBon |
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3 |
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0.6 |
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4 |
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t |
0.5 |
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5 |
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0.4 |
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0.1 |
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1 |
10 |
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IC / A |
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Fig.4. |
Switching times definitions. |
Fig.7. |
Typical base-emitter saturation voltage. |
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VBEsat = f (IC); parameter IC/IB |
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+ 150 v nominal |
VCESAT / V |
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BU2525AF |
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adjust for ICM |
1 |
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IC/IB = |
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0.9 |
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0.8 |
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5 |
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4 |
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0.7 |
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Lc |
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3 |
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0.6 |
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0.5 |
Tj = 25 C |
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0.4 |
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Tj = 125 C |
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IBon |
LB |
T.U.T. |
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BY228 |
0.3 |
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Cfb |
0.2 |
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-VBB |
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0.1 |
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0 |
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1 |
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100 |
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0.1 |
10 |
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IC / A |
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Fig.5. |
Switching times test circuit. |
Fig.8. Typical collector-emitter saturation voltage. |
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VCEsat = f (IC); parameter IC/IB |
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February 1993 |
3 |
Rev 1.000 |
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Philips Semiconductors |
Product specification |
|
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Silicon Diffused Power Transistor |
BU2525AX |
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|
VBESAT / V |
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BU2525AF |
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1.2 |
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Tj = 25 C |
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1.1 |
Tj = 125 C |
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1 |
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0.9 |
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0.8 |
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IC= |
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8 A |
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0.7 |
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6 A |
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5 A |
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0.6 |
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4 A |
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0 |
1 |
2 |
3 |
4 |
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IB / A |
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Fig.9. Typical base-emitter saturation voltage. VBEsat = f (IB); parameter IC
VCESAT / V |
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BU2525AF |
10 |
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Tj = 25 C |
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Tj = 125 C |
1 |
8 A |
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6 A |
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5 A |
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IC = 4 A |
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0.1 |
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0.1 |
1 |
10 |
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IB / A |
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Fig.10. Typical collector-emitter saturation voltage. VCEsat = f (IB); parameter IC
Eoff / uJ |
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BU2525AF |
1000 |
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IC = 8 A |
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7 A |
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100 |
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10 |
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0.1 |
1 |
10 |
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IB / A |
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Fig.11. Typical turn-off losses. Tj = 85˚C Eoff = f (IB); parameter IC; f = 32 kHz
ts, tf / us |
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BU2525AF |
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12 |
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11 |
32 kHz |
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10 |
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9 |
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8 |
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ts |
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7 |
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6 |
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5 |
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4 |
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IC = |
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3 |
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8 A |
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2 |
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7 A |
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1 |
tf |
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0 |
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0.1 |
1 |
10 |
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IB / A |
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Fig.12. Typical collector storage and fall time. |
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ts = f (IB); tf = f (IB); parameter IC; Tj = 85˚C; f = 32 kHz |
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120 |
PD% |
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Normalised Power Derating |
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with heatsink compound |
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110 |
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100 |
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90 |
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80 |
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70 |
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60 |
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50 |
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40 |
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30 |
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20 |
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10 |
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0 |
0 |
20 |
40 |
60 |
80 |
100 |
120 |
140 |
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Ths / C |
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Fig.13. |
Normalised power dissipation. |
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PD% = 100×PD/PD 25˚C = f (Ths) |
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10 |
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Zth / (K/W) |
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BU2525AF |
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1 |
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0.5 |
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0.2 |
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0.1 |
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0.1 |
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0.05 |
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0.02 |
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PD |
tp |
tp |
0.01 |
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D = T |
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D = 0 |
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T |
t |
0.001 |
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1E-06 |
1E-04 |
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1E-02 |
1E+00 |
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t / s |
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Fig.14. Transient thermal impedance.
Zth j-hs = f(t); parameter D = tp/T
February 1993 |
4 |
Rev 1.000 |
Philips Semiconductors |
Product specification |
|
|
Silicon Diffused Power Transistor |
BU2525AX |
|
|
IC / A |
BU2525AF |
100
tp =
ICM |
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= 0.01 |
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40 us |
ICDC |
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10 |
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100 us |
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Ptot |
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1 |
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1 ms |
0.1 |
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10 ms |
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DC |
0.01 |
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1 |
10 |
100 |
1000 VCE / V |
Fig.15. Forward bias safe operating area. Ths = 25 ˚C
ICDC & ICM = f(VCE); ICM single pulse; parameter tp
Second-breakdown limits independant of temperature.
Mounted with heatsink compound.
February 1993 |
5 |
Rev 1.000 |