Материал: 9686
Philips Semiconductors |
Product specification |
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Thyristors |
BT151X series |
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GENERAL DESCRIPTION |
QUICK REFERENCE DATA |
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Glass passivated thyristors in a full |
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SYMBOL |
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PARAMETER |
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MAX. |
MAX. |
MAX. |
UNIT |
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pack, plastic envelope, intended for |
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BT151X- |
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500 |
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650 |
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800 |
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use in applications requiring high |
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bidirectional |
blocking voltage |
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VDRM, |
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Repetitive peak off-state |
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500 |
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650 |
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800 |
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V |
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capability and high thermal cycling |
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VRRM |
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voltages |
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performance. |
Typical applications |
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IT(AV) |
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Average on-state current |
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5.7 |
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5.7 |
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5.7 |
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A |
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include motor control, industrial and |
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IT(RMS) |
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RMS on-state current |
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9 |
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9 |
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9 |
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A |
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domestic lighting, heating and static |
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ITSM |
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Non-repetitive peak on-state |
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100 |
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100 |
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100 |
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A |
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switching. |
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current |
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PINNING - SOT186A |
PIN CONFIGURATION |
SYMBOL |
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PIN DESCRIPTION
1cathode
2anode
3gate case isolated
case
a 
k
1 2 3 |
g |
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
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MAX. |
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UNIT |
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-500 |
-650 |
-800 |
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V |
, V |
RRM |
Repetitive peak off-state |
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5001 |
6501 |
800 |
V |
DRM |
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voltages |
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half sine wave; Ths ≤ 87 ˚C |
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IT(AV) |
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Average on-state current |
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5.7 |
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A |
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IT(RMS) |
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RMS on-state current |
all conduction angles |
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9 |
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A |
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ITSM |
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Non-repetitive peak |
half sine wave; Tj = 125 ˚C prior |
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on-state current |
to surge; with reapplied VDRM(max) |
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100 |
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A |
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t = 10 ms |
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t = 8.3 ms |
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110 |
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A |
I2t |
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I2t for fusing |
t = 10 ms |
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50 |
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A2s |
dIT/dt |
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Repetitive rate of rise of |
ITM = 20 A; IG = 50 mA; |
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50 |
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A/μs |
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on-state current after |
dIG/dt = 50 mA/μs |
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triggering |
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IGM |
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Peak gate current |
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2 |
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A |
VGM |
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Peak gate voltage |
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- |
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5 |
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V |
VRGM |
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Peak reverse gate voltage |
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5 |
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V |
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PGM |
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Peak gate power |
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- |
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5 |
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W |
PG(AV) |
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Average gate power |
over any 20 ms period |
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0.5 |
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W |
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Tstg |
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Storage temperature |
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-40 |
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150 |
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˚C |
Tj |
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Operating junction |
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125 |
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˚C |
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temperature |
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1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/μs.
February 1996 |
1 |
Rev 1.100 |
Philips Semiconductors |
Product specification |
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Thyristors |
BT151X series |
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ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
Visol |
R.M.S. isolation voltage from all |
f = 50-60 Hz; sinusoidal |
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2500 |
V |
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three terminals to external |
waveform; |
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heatsink |
R.H. ≤ 65% ; clean and dustfree |
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Cisol |
Capacitance from T2 to external |
f = 1 MHz |
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10 |
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pF |
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heatsink |
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THERMAL RESISTANCES
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
Rth j-hs |
Thermal resistance |
with heatsink compound |
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4.5 |
K/W |
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junction to heatsink |
without heatsink compound |
- |
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6.5 |
K/W |
Rth j-a |
Thermal resistance |
in free air |
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55 |
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K/W |
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junction to ambient |
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STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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IGT |
Gate trigger current |
VD = 12 |
V; IT = 0.1 A |
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2 |
15 |
mA |
IL |
Latching current |
VD = 12 |
V; IGT = 0.1 A |
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10 |
40 |
mA |
IH |
Holding current |
VD = 12 |
V; IGT = 0.1 A |
- |
7 |
20 |
mA |
VT |
On-state voltage |
IT = 23 A |
- |
1.4 |
1.75 |
V |
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VGT |
Gate trigger voltage |
VD = 12 |
V; IT = 0.1 A |
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0.6 |
1.5 |
V |
ID, IR |
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VD = VDRM(max); IT = 0.1 A; Tj = 125 ˚C |
0.25 |
0.4 |
- |
V |
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Off-state leakage current |
VD = VDRM(max); VR = VRRM(max); Tj = 125 ˚C |
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0.1 |
0.5 |
mA |
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DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL |
PARAMETER |
CONDITIONS |
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MIN. |
TYP. |
MAX. |
UNIT |
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dVD/dt |
Critical rate of rise of |
VDM = 67% VDRM(max); Tj = 125 ˚C; |
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off-state voltage |
exponential waveform |
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V/μs |
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Gate open circuit |
50 |
130 |
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tgt |
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RGK = 100 |
Ω |
200 |
1000 |
- |
V/μs |
Gate controlled turn-on |
ITM = 40 A; VD = VDRM(max); IG = 0.1 A; |
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2 |
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μs |
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time |
dIG/dt = 5 A/μs |
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μs |
tq |
Circuit commutated |
VD = 67% VDRM(max); Tj = 125 ˚C; |
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70 |
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turn-off time |
ITM = 20 A; VR = 25 V; dITM/dt = 30 A/μs; |
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dVD/dt = 50 V/μs; RGK = 100 Ω |
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February 1996 |
2 |
Rev 1.100 |
Philips Semiconductors |
Product specification |
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Thyristors |
BT151X series |
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10 |
Ptot / W |
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BT151F |
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Ths(max) / C80 |
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conduction |
form |
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a = 1.57 |
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angle |
factor |
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degrees |
a |
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89 |
8 |
30 |
4 |
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1.9 |
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60 |
2.8 |
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90 |
2.2 |
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2.2 |
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120 |
1.9 |
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2.8 |
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6 |
180 |
1.57 |
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98 |
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4 |
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4 |
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107 |
2 |
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116 |
0 |
0 |
1 |
2 |
3 |
4 |
5 |
125 |
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6 |
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IF(AV) / A |
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Fig.1. Maximum on-state dissipation, Ptot, versus
average on-state current, IT(AV), where a = form factor = IT(RMS)/ IT(AV).
1000 |
ITSM / A |
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BT151 |
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dIT/dt limit |
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100 |
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IT |
ITSM |
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T |
time |
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Tj initial = 125 C max |
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10 |
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100us |
1ms |
10ms |
10us |
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T / s |
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Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp ≤ 10ms.
IT(RMS) / A |
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BT151F |
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10 |
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87 C |
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8 |
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6 |
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4 |
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2 |
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0 |
0 |
50 |
100 |
150 |
-50 |
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Ths / C |
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Fig.3. Maximum permissible rms current IT(RMS) , versus heatsink temperature Ths.
120 |
ITSM / A |
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BT151 |
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100 |
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IT |
ITSM |
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T |
time |
80 |
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Tj initial = 125 C max |
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60 |
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40 |
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20 |
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0 |
1 |
10 |
100 |
1000 |
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Number of half cycles at 50Hz |
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Fig.4. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz.
25 |
IT(RMS) / A |
BT151 |
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20 |
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15 |
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10 |
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5 |
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0 |
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0.1 |
1 |
10 |
0.01 |
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surge duration / s |
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Fig.5. Maximum permissible repetitive rms on-state
current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Ths ≤ 87˚C.
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VGT(Tj) |
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BT151 |
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1.6 |
VGT(25 C) |
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1.4 |
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1.2 |
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1 |
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0.8 |
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0.6 |
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0.4 |
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0 |
50 |
100 |
150 |
-50 |
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Tj / C |
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Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
February 1996 |
3 |
Rev 1.100 |
Philips Semiconductors |
Product specification |
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Thyristors |
BT151X series |
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IGT(Tj) |
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BT151 |
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3 |
IGT(25 C) |
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2.5 |
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2 |
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1.5 |
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1 |
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0.5 |
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0 |
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0 |
50 |
100 |
150 |
-50 |
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Tj / C |
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Fig.7. Normalised gate trigger current IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
IL(Tj) |
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IL(25 C) |
BT145 |
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3 |
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2.5 |
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2 |
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1.5 |
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1 |
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0.5 |
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0 |
0 |
50 |
100 |
150 |
-50 |
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Tj / C |
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Fig.8. |
Normalised latching current IL(Tj)/ IL(25˚C), |
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versus junction temperature Tj. |
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IH(Tj) |
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IH(25 C) |
BT151 |
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3 |
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2.5 |
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2 |
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1.5 |
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1 |
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0.5 |
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0 |
0 |
50 |
100 |
150 |
-50 |
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Tj / C |
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Fig.9. Normalised holding current IH(Tj)/ IH(25˚C), versus junction temperature Tj.
30 |
IT / A |
BT151 |
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Tj = 125 C |
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25 |
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Tj = 25 C |
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Vo = 1.06 V |
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Rs = 0.0304 ohms |
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typ |
max |
20 |
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15 |
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10 |
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5 |
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0 |
0 |
0.5 |
1 |
1.5 |
2 |
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VT / V |
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Fig.10. Typical and maximum on-state characteristic.
10 |
Zth j-hs (K/W) |
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BT151 |
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without heatsink compound |
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1 |
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with heatsink compound |
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0.1 |
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P |
t p |
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D |
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0.01 |
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t |
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0.001 |
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0.1ms |
1ms |
10ms |
0.1s |
1s |
10s |
10us |
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tp / s |
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Fig.11. Transient thermal impedance Zth j-hs, versus pulse width tp.
10000 |
dVD/dt (V/us) |
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1000 |
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RGK = 100 Ohms |
100 |
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gate open circuit |
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10 |
0 |
50 |
100 |
150 |
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Tj / C |
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Fig.12. Typical, critical rate of rise of off-state voltage, dVD/dt versus junction temperature Tj.
February 1996 |
4 |
Rev 1.100 |
Philips Semiconductors |
Product specification |
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Thyristors |
BT151X series |
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MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
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10.3 |
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max |
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4.6 |
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max |
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3.2 |
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2.9 max |
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3.0 |
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Recesses (2x) |
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2.8 |
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2.5 |
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6.4 |
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0.8 max. depth |
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seating |
15.8 |
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15.8 |
19 |
max |
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max. |
max. |
plane |
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3 max. |
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not tinned |
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3 |
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2.5 |
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13.5 |
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min. |
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1 |
2 |
3 |
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0.4 M |
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1.0 (2x) |
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2.54 |
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0.6 |
0.9 |
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0.5 |
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0.7 |
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5.08 |
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2.5 |
1.3 |
Fig.13. SOT186A; The seating plane is electrically isolated from all terminals.
Notes
1.Accessories supplied on request: refer to mounting instructions for F-pack envelopes.
2.The improved isolation rating applies only to the SOT186 version A envelope.
February 1996 |
5 |
Rev 1.100 |