Материал: 9874
DISCRETE SEMICONDUCTORS
handbook, 2 columns
M3D116
BYV95 series
Fast soft-recovery
controlled avalanche rectifiers
Product specification |
1996 Jun 07 |
Supersedes data of April 1982
File under Discrete Semiconductors, SC01
Philips Semiconductors |
Product specification |
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Fast soft-recovery
BYV95 series
controlled avalanche rectifiers
FEATURES
∙Glass passivated
∙High maximum operating temperature
∙Low leakage current
∙Excellent stability
∙Guaranteed avalanche energy absorption capability
∙Available in ammo-pack.
DESCRIPTION |
hermetically sealed and fatigue free |
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Rugged glass SOD57 package, |
as coefficients of expansion of all |
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used parts are matched. |
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using a high temperature alloyed |
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construction. This package is |
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k |
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2/3 page (Datasheet) |
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MAM047 |
Fig.1 Simplified outline (SOD57) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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VRRM |
repetitive peak reverse voltage |
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BYV95A |
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200 |
V |
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BYV95B |
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− |
400 |
V |
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BYV95C |
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600 |
V |
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VR |
continuous reverse voltage |
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BYV95A |
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− |
200 |
V |
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BYV95B |
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− |
400 |
V |
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BYV95C |
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− |
600 |
V |
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IF(AV) |
average forward current |
Ttp = 65 °C; lead length = 10 mm |
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1.5 |
A |
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see Fig. 2; |
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averaged over any 20 ms period; |
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see also Fig. 6 |
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Tamb = 65 °C; PCB mounting (see |
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0.8 |
A |
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Fig.11); see Fig. 3; |
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averaged over any 20 ms period; |
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see also Fig. 6 |
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IFRM |
repetitive peak forward current |
Ttp = 65 °C; see Fig. 4 |
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17 |
A |
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Tamb = 65 °C; see Fig. 5 |
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9 |
A |
IFSM |
non-repetitive peak forward current |
t = 10 ms half sine wave; |
− |
35 |
A |
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Tj = Tj max prior to surge; |
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VR = VRRMmax |
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ERSM |
non-repetitive peak reverse |
L = 120 mH; Tj = Tj max prior to |
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10 |
mJ |
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avalanche energy |
surge; inductive load switched off |
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Tstg |
storage temperature |
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−65 |
+175 |
°C |
Tj |
junction temperature |
see Fig. 7 |
−65 |
+175 |
°C |
1996 Jun 07 |
2 |
Philips Semiconductors |
Product specification |
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Fast soft-recovery
BYV95 series
controlled avalanche rectifiers
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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VF |
forward voltage |
IF = 3 A; Tj = Tj max; see Fig. 8 |
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1.35 |
V |
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IF = 3 A; see Fig. 8 |
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1.60 |
V |
V(BR)R |
reverse avalanche |
IR = 0.1 mA |
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breakdown voltage |
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BYV95A |
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300 |
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V |
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BYV95B |
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500 |
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- |
V |
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BYV95C |
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700 |
- |
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V |
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IR |
reverse current |
VR = VRRMmax; |
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1 |
mA |
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see Fig. 9 |
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VR = VRRMmax; Tj = 165 °C; |
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150 |
mA |
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see Fig. 9 |
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trr |
reverse recovery time |
when switched from IF = 0.5 A |
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250 |
ns |
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to IR = 1 A; measured at |
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IR = 0.25 A; see Fig. 12 |
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Cd |
diode capacitance |
f = 1 MHz; VR = 0 V; see Fig. 10 |
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45 |
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pF |
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dIR |
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maximum slope of |
when switched from IF = 1 A to |
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7 |
A/ms |
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-------- |
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reverse recovery current |
VR ³ 30 V and dIF/dt = -1 A/ms; |
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dt |
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see Fig.13 |
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THERMAL CHARACTERISTICS |
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SYMBOL |
PARAMETER |
CONDITIONS |
VALUE |
UNIT |
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Rth j-tp |
thermal resistance from junction to tie-point |
lead length = 10 mm |
46 |
K/W |
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Rth j-a |
thermal resistance from junction to ambient |
note 1 |
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100 |
K/W |
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Note
1.Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ³40 mm, see Fig.11. For more information please refer to the ‘General Part of Handbook SC01’.
1996 Jun 07 |
3 |
Philips Semiconductors |
Product specification |
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Fast soft-recovery
BYV95 series
controlled avalanche rectifiers
GRAPHICAL DATA |
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2.0 |
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MGC581 |
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handbook, halfpage |
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IF(AV) |
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(A) |
lead length 10 mm |
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1.6 |
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1.2 |
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0.8 |
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0.4 |
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0 |
100 |
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Ttp (oC) |
200 |
a = 1.42; VR = VRRMmax; δ = 0.5. Switched mode application.
Fig.2 Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage).
MGC580
1.2 handbook, halfpage
IF(AV)
(A)
0.8
0.4
0 |
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0 |
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200 |
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Tamb (oC) |
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a = 1.42; VR = VRRMmax; δ = 0.5. |
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Device mounted as shown in Fig.11. |
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Switched mode application. |
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Fig.3 |
Maximum permissible average forward |
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current as a function of ambient temperature |
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(including losses due to reverse leakage). |
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MGC578 |
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handbook, full pagewidth |
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IFRM |
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δ = |
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(A) |
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0.05 |
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16 |
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12 |
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0.1 |
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0.2 |
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0.5 |
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10 2 |
10 3 |
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10 4 |
10 |
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1 |
10 |
tp (ms) |
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Ttp = 65 °C; Rth j-tp = 46 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 600 V.
Fig.4 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1996 Jun 07 |
4 |
Philips Semiconductors |
Product specification |
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Fast soft-recovery
BYV95 series
controlled avalanche rectifiers
10 |
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MGC579 |
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handbook, full pagewidth |
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δ = |
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IFRM |
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0.05 |
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(A) |
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0.1 |
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0.2 |
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0.5 |
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10 2 |
10 3 |
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10 4 |
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1 |
10 |
tp (ms) |
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Tamb = 65 °C; Rth j-a = 100 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 600 V.
Fig.5 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
3 |
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MGC576 |
200 |
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MGC575 |
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handbook, halfpage |
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handbook, halfpage |
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P |
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2.5 |
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(W) |
a = 3 |
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1.57 |
Tj |
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1.42 |
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(oC) |
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100 |
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1 |
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A |
B |
C |
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1 |
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0 |
200 |
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IF(AV) (A) |
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VR (V) |
a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5. |
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Fig.6 Maximum steady state power dissipation |
Solid line = VR. |
Dotted line = VRRM; δ = 0.5. |
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(forward plus leakage current losses, |
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excluding switching losses) as a function |
Fig.7 Maximum permissible junction temperature |
of average forward current. |
as a function of reverse voltage. |
1996 Jun 07 |
5 |