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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MJ10009/D

Designer's Data Sheet

SWITCHMODE Series

NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode

The MJ10009 Darlington transistor is designed for high±voltage, high±speed, power switching in Inductive circuits where fall time is critical. It is particularly suited for line operated switchmode applications such as:

•Switching Regulators

•Inverters

•Solenoid and Relay Drivers

•Motor Controls

•Deflection Circuits

Fast Turn±Off Times

1.6 μs (max) Inductive Crossover Time ± 10 A, 100_C 3.5 μs (max) Inductive Storage Time ± 10 A, 100_C

Operating Temperature Range ±65 to +200_C

100_C Performance Specified for:

≈ 100

≈ 15

MJ10009*

*Motorola Preferred Device

20 AMPERE

NPN SILICON

POWER DARLINGTON

TRANSISTORS

450 and 500 VOLTS

175 WATTS

CASE 1±07 TO±204AA (TO±3)

Reversed Biased SOA with Inductive Loads

Switching Times with Inductive Loads

Saturation Voltages

Leakage Currents

MAXIMUM RATINGS

Rating	Symbol	Value	Unit

Collector±Emitter Voltage	VCEO	500	Vdc
Collector±Emitter Voltage	VCEX	500	Vdc

Collector±Emitter Voltage	VCEV	700	Vdc
Emitter Base Voltage	VEB	8	Vdc
Collector Current Ð Continuous	IC	20	Adc
Ð Peak (1)	ICM	30
Base Current Ð Continuous	IB	2.5	Adc
Ð Peak (1)	IBM	5
Total Power Dissipation @ TC = 25_C	PD	175	Watts
@ TC = 100_C		100
Derate above 25_C		1	_
			W/ C
Operating and Storage Junction Temperature Range	TJ, Tstg	± 65 to +200	_C

THERMAL CHARACTERISTICS

Characteristic	Symbol	Max	Unit

Thermal Resistance, Junction to Case	RqJC	1	_C/W
Maximum Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds	TL	275	_C

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%.

Designer's and SWITCHMODE are trademarks of Motorola, Inc.

Designer's Data for ªWorst Caseº Conditions Ð The Designer 's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves Ð representing boundaries on device characteristics Ð are given to facilitate ªworst caseº design.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 2

Motorola, Inc. 1995

MJ10009

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

	Characteristic	Symbol	Min		Typ	Max	Unit

OFF CHARACTERISTICS

Collector Emitter Sustaining Voltage (Table 1)		VCEO(sus)	500		Ð	Ð	Vdc
(IC = 100 mA, IB = 0, Vclamp = Rated VCEO)
Collector Emitter Sustaining Voltage (Table 1, Figure 12)		VCEX(sus)					Vdc
(IC = 2 A, Vclamp = Rated VCEX, TC = 100_C, VBE(off) = 5 V)			500		Ð	Ð
(IC = 10 A, Vclamp = Rated VCEX, TC = 100_C, VBE(off) = 5 V)			375		Ð	Ð
Collector Cutoff Current		ICEV					mAdc
(VCEV = Rated Value, VBE(off) = 1.5 Vdc)			Ð		Ð	0.25
(VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 150_C)			Ð		Ð	5
Collector Cutoff Current		ICER	Ð		Ð	5	mAdc
(VCE = Rated VCEV, RBE = 50 Ω, TC = 100_C)
Emitter Cutoff Current		IEBO	Ð		Ð	175	mAdc
(VEB = 2 Vdc, IC = 0)
SECOND BREAKDOWN

Second Breakdown Collector Current with base forward biased		IS/b		See Figure 11
ON CHARACTERISTICS (2)

DC Current Gain		hFE					Ð
(IC = 5 Adc, VCE = 5 Vdc)			40		Ð	400
(IC = 10 Adc, VCE = 5 Vdc)			30		Ð	300
Collector±Emitter Saturation Voltage		VCE(sat)					Vdc
(IC = 10 Adc, IB = 500 mAdc)			Ð		Ð	2
(IC = 20 Adc, IB = 2 Adc)			Ð		Ð	3.5
(IC = 10 Adc, IB = 500 mAdc, TC = 100_C)			Ð		Ð	2.5
Base±Emitter Saturation Voltage		VBE(sat)					Vdc
(IC = 10 Adc, IB = 500 mAdc)			Ð		Ð	2.5
(IC = 10 Adc, IB = 500 mAdc, TC = 100_C)			Ð		Ð	2.5
Diode Forward Voltage (1)		Vf	Ð		3	5	Vdc
(IF = 10 Adc)
DYNAMIC CHARACTERISTICS

Small±Signal Current Gain		hfe	8		Ð	Ð	Ð
(IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz)
Output Capacitance		Cob	100		Ð	325	pF
(VCB = 10 Vdc, IE = 0, ftest = 100 kHz)
SWITCHING CHARACTERISTICS

Resistive Load (Table 1)

Delay Time		td	Ð		0.12	0.25	μs
Rise Time	(VCC = 250 Vdc, IC = 10 A,	t	Ð		0.5	1.5	μs
	IB1 = 500 mA, VBE(off) = 5 Vdc, tp = 25 μs	r
Storage Time	IB1 = 500 mA, VBE(off) = 5 Vdc, tp = 25 μs	ts	Ð		0.8	2.0	μs
Storage Time	Duty Cycle v 2%).	ts	Ð		0.8	2.0	μs
Fall Time		tf	Ð		0.2	0.6	μs
Inductive Load, Clamped (Table 1)

Storage Time	(IC = 10 A(pk), Vclamp = 250 V, IB1 = 500 mA,	tsv	Ð		1.5	3.5	μs
Crossover Time	VBE(off) = 5 Vdc, TC = 100_C)	t	Ð		0.36	1.6	μs
		c
Storage Time	(IC = 10 A(pk), Vclamp = 250 V, IB1 = 500 mA,	tsv	Ð		0.8	Ð	μs
Crossover Time	VBE(off) = 5 Vdc)	t	Ð		0.18	Ð	μs
		c

(1) The internal Collector±to±Emitter diode can eliminate the need for an external diode to clamp inductive loads.

(1)Tests have shown that the Forward Recovery Voltage (Vf) of this diode is comparable to that of typical fast recovery rectifiers.

(2)Pulse Test: PW = 300 μs, Duty Cycle ≤ 2%.

2	Motorola Bipolar Power Transistor Device Data

hFE, DC CURRENT GAIN

MJ10009

								TYPICAL CHARACTERISTICS
400											(VOLTS)	3
400												3

200						TJ = 150°C					VOLTAGE	2.6
						TJ = 150°C

														IC	=	5	A		10	A		20 A


											COLLECTOR±EMITTER	2.2
100						25°C
																						TJ = 25	°C
																						TJ = 25	°C

												1.8
60




40												1.4




				VCE =	5 V						,
				VCE =	5 V						,
											CE
20											V	1
	0.5	1			2		5		10	20	V		0.05	0.1				0.2	0.5		1	2		3

0.2												0.03
			IC, COLLECTOR CURRENT (AMP)															IB, BASE CURRENT (AMP)
		Figure 1. DC Current Gain											Figure 2. Collector Saturation Region

V, VOLTAGE (VOLTS)

2.4
2.4

2		IC	/IB	= 10
1.6



1.2							TJ	= ± 55	°C

0.8								25°C

								150°		C
								150°		C
0.4
0.4	0.3	0.5			0.7	1	2	3			5	7	10	20
0.2	0.3	0.5			0.7	1	2	3			5	7	10	20

IC, COLLECTOR CURRENT (AMP)

Figure 3. Collector±Emitter Saturation Voltage

	2.8
			VBE(sat) @ IC/IB = 10
	2.4		VBE(on) @ VCE = 3 V
	2.4
(VOLTS)	2					TJ = ± 55°C
VOLTAGE								25°C
	1.6							25°C

V,
V,
	1.2							150°C
								150°C
	0.8	0.3	0.5	0.7	1	2	3	5	7	10	20
	0.2	0.3	0.5	0.7	1	2	3	5	7	10	20

IC, COLLECTOR CURRENT (AMP)

Figure 4. Base-Emitter Voltage

	104							1000
	V	CE	= 250 V					700									°
μA)		CE					(pF)	700								TJ = 25 C
μA)	103						(pF)	500
COLLECTOR, CURRENT (	100						OUTPUT, CAPACITANCE	500								Cob
COLLECTOR, CURRENT (	100	TJ = 125°C					OUTPUT, CAPACITANCE	100								Cob
	102		100°C					300
	101		75°C					200
	101
	REVERSE			FORWARD
				FORWARD			ob
C			25°C				ob
I							C	70


	10±1		0	+ 0.2	+ 0.4	+ 0.6	+ 0.8	50	1	2	4	6	10	20	40 60	100	200	400
	± 0.2		0	+ 0.2	+ 0.4	+ 0.6	+ 0.8	0.4 0.6	1	2	4	6	10	20	40 60	100	200	400
			VBE, BASE±EMITTER VOLTAGE (VOLTS)								VR, REVERSE VOLTAGE (VOLTS)

Figure 5. Collector Cutoff Region

Figure 6. Output Capacitance

Motorola Bipolar Power Transistor Device Data

MJ10009

Table 1. Test Conditions for Dynamic Performance

	VCEO(sus)		RBSOA AND INDUCTIVE SWITCHING
								+ V DRIVE
		DRIVER SCHEMATIC				0.005 μF
	1					10		RB
	1
	20	For inductive loads pulse width
INPUT CONDITIONS	0	is adjusted to obtain specified IC
INPUT CONDITIONS	0					2N3762		0.005
						2N3762		0.005
				+		10
	2		PG	±	10 μF
				±			10	MTP3055E
		HP214						MTP3055E
			IN
			IN
	PW Varied to Attain	± 38 V						1
	PW Varied to Attain	± 38 V						2
	IC = 100 mA		50		0.05	μF		2
					0.05	μF
						2.0 μF		50
								50
						+ ±
CIRCUIT VALUES	Vclamp = VCEO(sus)	VCC = 20 V			1000	100		± Voff
CIRCUIT VALUES	Vclamp = VCEO(sus)	VCC = 20 V						± Voff
	Lcoil = 10 mH, VCC = 10 V	Lcoil = 180	μH					MTP3055E
	Rcoil = 0.7 Ω	Rcoil = 0.05 Ω
		Vclamp = Rated VCEX Value						DRIVE
	INDUCTIVE TEST CIRCUIT		OUTPUT WAVEFORMS

				IC		tf UNCLAMPED [ t2	t1 Adjusted to
				IC		tf UNCLAMPED [ t2	Obtain I
CIRCUITS	TUT							C
	TUT		Rcoil					Lcoil (ICpk)
	1	1N4937	Rcoil	IC(pk)		tf CLAMPED	t1 ≈	Lcoil (ICpk)
	INPUT	OR	Lcoil			tf CLAMPED	t1 ≈	VCC
	INPUT	EQUIVALENT	Lcoil			t		Lcoil (ICpk)
	SEE ABOVE FOR							Lcoil (ICpk)
TEST	DETAILED CONDITIONS	Vclamp	VCC	t1	tf		t2 ≈	VClamp
TEST	2	RS =		VCE			Test Equipment
	2	RS =		VCE			Test Equipment
		0.1 Ω		VCE or			Scope Ð Tektronix
				VCE or			475 or Equivalent
				Vclamp			475 or Equivalent
				Vclamp
				TIME		t
				TIME		t2
						t2

RESISTIVE SWITCHING

IB1

IB1 adjusted to obtain the forced hFE desired

TURN±OFF TIME

Use inductive switching driver as the input to the resistive test circuit.

VCC = 250 V

RL = 25 Ω

Pulse Width = 25 μs

RESISTIVE TEST CIRCUIT

	TUT
1	RL
2	VCC
	VCC

	ICM		VCEM	Vclamp
IC		90% VCEM	90% ICM
IC	tsv	trv	tfi	tti
		tc
VCE
I		10% VCEM	10%	2% I
B	90% IB1		ICM	2% I
	90% IB1		ICM	C

TIME

SWITCHING TIMES NOTE

In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and voltage waveforms since they are in phase. However, for inductive loads which are common to SWITCHMODE power supplies and hammer drivers, current and voltage waveforms are not in phase. Therefore, separate measurements must be made on each waveform to determine the total switching time. For this reason, the following new terms have been defined.

tsv = Voltage Storage Time, 90% IB1 to 10% Vclamp trv = Voltage Rise Time, 10±90% Vclamp

tfi = Current Fall Time, 90±10% IC tti = Current Tail, 10±2% IC

tc = Crossover Time, 10% Vclamp to 10% IC

Figure 7. Inductive Switching Measurements

4	Motorola Bipolar Power Transistor Device Data

MJ10009

TYPICAL CHARACTERISTICS

SWITCHING TIMES NOTE (continued)

For the designer, there is minimal switching loss during storage time and the predominant switching power losses occur during the crossover interval and can be obtained using the standard equation from AN±222.

PSWT = 1/2 VCC IC (tc) f

Typical inductive switching waveforms are shown in Fig-

ure 7. In general, trv + tfi ] tc. However, at lower test currents this relationship may not be valid.

As is common with most switching transistors, resistive switching is specified at 25_C and has become a benchmark for designers. However, for designers of high frequency converter circuits, the user oriented specifications which make this a ªSWITCHMODEº transistor are the inductive switching speeds (tc and tsv) which are guaranteed at 100_C.

RESISTIVE SWITCHING PERFORMANCE

t, TIME ( μs)

0.5

0.2

0.1

										1.0
										1.0
	tP = 25	μs, DUTY			CYCLE v 2%						VCC =	250 V
	tP = 25	μs, DUTY			CYCLE v 2%						IC/IB = 20
											IC/IB = 20
										0.5	VBE(off) = 5		V
		V	CC	=	250 V					0.5	TJ = 25°C
											TJ = 25°C

		IC/IB =			20				(μs)
		TJ = 25			°C				(μs)		t
							tr		TIME		s
							tr		TIME	0.2		tP =	25 μs, DUTY CYCLE		v	2%		tf
									t,			tP =	25 μs, DUTY CYCLE		v	2%
								td		0.1
										0.1
										0.05



2				5		10		20			2			5			10	20
2				5		10		20		1	2			5			10	20
	IC, COLLECTOR CURRENT (AMP)													IC, COLLECTOR CURRENT (AMP)
	Figure 8. Turn-On Time													Figure 9. Turn-Off Time

TRANSIENT THERMAL RESISTANCE	(NORMALIZED)
r(t),

1.0
0.7	D = 0.5
0.5	D = 0.5
0.5
0.3	0.2
0.2	0.2
0.2
	0.1
0.1	0.05							ZθJC (t) = r(t) RθJC			P(pk)
0.07	0.05							ZθJC (t) = r(t) RθJC			P(pk)
0.07								RθJC = 1.0°C/W MAX
0.05								RθJC = 1.0°C/W MAX
0.05	0.02							D CURVES APPLY FOR POWER
	0.02							PULSE TRAIN SHOWN
0.03								PULSE TRAIN SHOWN				t1
0.03								READ TIME AT t1				t1
0.02	0.01							READ TIME AT t1				t2
0.02		SINGLE PULSE						TJ(pk) ± TC = P(pk) ZθJC(t)				t2
		SINGLE PULSE						TJ(pk) ± TC = P(pk) ZθJC(t)				DUTY CYCLE, D = t1/t2
0.01	0.02	0.05	0.1	0.2	0.5	1.0	2.0	5.0	10	20	50	100	200	500	1 k
0.01	0.02	0.05	0.1	0.2	0.5	1.0	2.0	5.0	10	20	50	100	200	500	1 k
							t, TIME (ms)

Figure 10. Thermal Response

Motorola Bipolar Power Transistor Device Data

Источник: https://studfile.net/preview/16503891/

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