Документ: MJE18002, страницы 1-5

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SEMICONDUCTOR TECHNICAL DATA

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Designer's Data Sheet

SWITCHMODE

NPN Bipolar Power Transistor

For Switching Power Supply Applications

The MJE/MJF18002 have an applications specific state±of±the±art die designed for use in 220 V line operated Switchmode Power supplies and electronic light ballasts. These high voltage/high speed transistors offer the following:

•Improved Efficiency Due to Low Base Drive Requirements:

ÐHigh and Flat DC Current Gain h FE

ÐFast Switching

ÐNo Coil Required in Base Circuit for Turn±Off (No Current Tail)

•Tight Parametric Distributions are Consistent Lot±to±Lot

•Two Package Choices: Standard TO±220 or Isolated TO±220

•MJF18002, Case 221D, is UL Recognized at 3500 VRMS: File #E69369

MAXIMUM RATINGS

Rating		Symbol	MJE18002		MJF18002	Unit

Collector±Emitter Sustaining Voltage		VCEO		450		Vdc
Collector±Emitter Breakdown Voltage		VCES		1000		Vdc
Emitter±Base Voltage		VEBO		9.0		Vdc
Collector Current Ð Continuous		IC		2.0		Adc
Ð Peak(1)		ICM		5.0
Base Current Ð Continuous		IB		1.0		Adc
Ð Peak(1)		IBM		2.0
RMS Isolated Voltage(2)	Test No. 1 Per Fig. 1	VISOL	Ð		4500	V
(for 1 sec, R.H. < 30%,	Test No. 2 Per Fig. 2		Ð		3500
TC = 25°C)	Test No. 3 Per Fig. 3		Ð		1500
Total Device Dissipation	(TC = 25°C)	PD	50		25	Watts
Derate above 25°C			0.4		0.2	W/°C

Operating and Storage Temperature		TJ, Tstg		± 65 to 150		°C
THERMAL CHARACTERISTICS

Rating	Symbol	MJE18002	MJF18002	Unit

Thermal Resistance Ð Junction to Case	RqJC	2.5	5.0	°C/W
Ð Junction to Ambient	RqJA	62.5	62.5
Maximum Lead Temperature for Soldering	TL	260		°C
Purposes: 1/8″ from Case for 5 Seconds

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

MJE18002* MJF18002*

*Motorola Preferred Device

POWER TRANSISTOR

2.0 AMPERES

1000 VOLTS

25 and 50 WATTS

CASE 221A±06

TO±220AB

MJE18002

CASE 221D±02

ISOLATED TO±220 TYPE

UL RECOGNIZED

MJF18002

Characteristic		Symbol	Min	Typ	Max		Unit

OFF CHARACTERISTICS

Collector±Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH)		VCEO(sus)	450	Ð	Ð		Vdc
Collector Cutoff Current (VCE = Rated VCEO, IB = 0)		ICEO	Ð	Ð	100		mAdc
Collector Cutoff Current (VCE = Rated VCES, VEB = 0)	TC = 125°C	ICES	Ð	Ð	100		mAdc
Collector Cutoff Current (VCE = 800 V, VEB = 0)	TC = 125°C		Ð	Ð	500
			Ð	Ð	100

Emitter Cutoff Current (VEB = 9.0 Vdc, IC = 0)		IEBO	Ð	Ð	100		mAdc
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%.						(continued)
(2) Proper strike and creepage distance must be provided.

Designer's Data for ªWorst Caseº Conditions Ð The Designer 's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves Ð representing boundaries on device characteristics Ð are given to facilitate ªworst caseº design.

Preferred devices are Motorola recommended choices for future use and best overall value.

Designer's and SWITCHMODE are trademarks of Motorola, Inc.

REV 1

Motorola, Inc. 1995

MJE18002 MJF18002

ELECTRICAL CHARACTERISTICS Ð continued (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

ON CHARACTERISTICS

Base±Emitter Saturation Voltage

(IC = 0.4 Adc, IB = 40 mAdc)

VBE(sat)

Ð

0.825

1.1

Vdc

Base±Emitter Saturation Voltage

(IC = 1.0 Adc, IB = 0.2 Adc)

Ð

0.92

1.25

Collector±Emitter Saturation Voltage

VCE(sat)

Vdc

(IC = 0.4 Adc, IB = 40 mAdc)

@ TC = 125°C

Ð

0.2

0.5

(IC = 1.0 Adc, IB = 0.2 Adc)

Ð

0.2

0.5

@ TC = 125°C

Ð

0.25

0.5

Ð

0.3

0.6

DC Current Gain (IC = 0.2 Adc, VCE = 5.0 Vdc)

@ TC = 125°C

hFE

14

Ð

34

Ð

27

Ð

DC Current Gain (IC = 0.4 Adc, VCE = 1.0 Vdc)

@ TC = 125°C

11

17

Ð

11

20

Ð

DC Current Gain (IC = 1.0 Adc, VCE = 1.0 Vdc)

@ TC = 125°C

6.0

8.0

Ð

5.0

8.0

Ð

DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc)

10

20

Ð

DYNAMIC CHARACTERISTICS

Current Gain Bandwidth (IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 MHz)

fT

Ð

13

Ð

MHz

Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

Cob

Ð

35

60

pF

Input Capacitance (VEB = 8.0 V)

Cib

Ð

400

600

pF

Dynamic Saturation:

IC = 0.4 A

1.0 μs

= 125°C

VCE(dsat)

Ð

3.5

Ð

Vdc

@ T

Ð

8.0

Ð

determined 1.0 μs and

IB1 = 40 mA

C

Ð

1.5

Ð

3.0 μs after rising I

VCC = 300 V

3.0 μs

B1

@ TC = 125°C

Ð

3.8

Ð

reach 0.9 final IB1

Ð

8.0

Ð

(see Figure 18)

IC = 1.0 A

1.0 μs

= 125°C

@ TC

Ð

14

Ð

IB1 = 0.2 A

Ð

2.0

Ð

VCC = 300 V

3.0 μs

@ TC

= 125°C

Ð

7.0

Ð

SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 20 μs)

Turn±On Time

IC = 0.4 Adc

@ TC = 125°C

ton

Ð

200

300

ns

IB1 = 40 mAdc

Ð

130

Ð

IB2 = 0.2 Adc

Turn±Off Time

toff

Ð

1.2

2.5

μs

VCC = 300 V

@ TC = 125°C

Ð

1.5

Ð

Turn±On Time

IC = 1.0 Adc

@ TC = 125°C

ton

Ð

85

150

ns

IB1 = 0.2 Adc

Ð

95

Ð

IB2 = 0.5 Adc

Turn±Off Time

toff

Ð

1.7

2.5

μs

VCC = 300 V

@ TC = 125°C

Ð

2.1

Ð

SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 μH)

Fall Time

IC = 0.4 Adc, IB1 = 40 mAdc,

@ TC = 125°C

tfi

Ð

125

200

ns

IB2 = 0.2 Adc

Ð

120

Ð

Storage Time

@ TC = 125°C

tsi

Ð

0.7

1.25

μs

Ð

0.8

Ð

Crossover Time

@ TC = 125°C

tc

Ð

110

200

ns

Ð

110

Ð

Fall Time

IC = 1.0 Adc, IB1 = 0.2 Adc,

@ TC = 125°C

tfi

Ð

110

175

ns

IB2 = 0.5 Adc

Ð

120

Ð

Storage Time

@ TC = 125°C

tsi

Ð

1.7

2.75

μs

Ð

2.25

Ð

Crossover Time

@ TC = 125°C

tc

Ð

200

300

ns

Ð

250

Ð

Fall Time

IC = 0.4 Adc, IB1 = 50 mAdc,

@ TC = 125°C

tfi

Ð

140

200

ns

IB2 = 50 mAdc

Ð

185

Ð

Storage Time

@ TC = 125°C

tsi

Ð

2.2

3.0

μs

Ð

2.5

Ð

Crossover Time

@ TC = 125°C

tc

Ð

140

250

ns

Ð

220

Ð

2	Motorola Bipolar Power Transistor Device Data

MJE18002 MJF18002

TYPICAL STATIC CHARACTERISTICS

	100					100
		TJ = 125°C	VCE = 1 V			TJ = 125°C	TJ = 25°C	VCE = 5 V
GAIN		TJ = 125°C			GAIN	TJ = 125°C	TJ = 25°C
GAIN					GAIN
, DC CURRENT		TJ = 25°C			, DC CURRENT	TJ = ± 20°C
	10					TJ = ± 20°C
	10					10

FE					FE
h					h
	1					1
	0.01	0.10	1.00	10.00		0.01	0.10	1.00	10.00
		IC, COLLECTOR CURRENT (AMPS)					IC, COLLECTOR CURRENT (AMPS)

Figure 1. DC Current Gain @ 1 Volt

Figure 2. DC Current Gain @ 5 Volts

VCE, VOLTAGE (VOLTS)

2					10.00
	TJ = 25°C
				(VOLTS)		1.00
1		1.5 A		VOLTAGE,			IC/IB = 10
1
			2 A
				CE		0.10
				CE
		1 A		V
		1 A					IC/IB = 5
		0.4 A					IC/IB = 5		TJ = 25°C
									TJ = 25°C
0	IC = 0.2 A					0.01			TJ = 125°C
0.001	0.010	0.100	1.000			0.01	0.10	1.00	10.00
	IB, BASE CURRENT (mA)						IC, COLLECTOR CURRENT (AMPS)

Figure 3. Collector Saturation Region

Figure 4. Collector±Emitter Saturation Voltage

VBE, VOLTAGE (VOLTS)

1.1					1000
1.0							Cib	TJ = 25°C
							Cib	TJ = 25°C
0.9				(pF)	100			f = 1 MHz
				(pF)
				CAPACITANCE
0.8				CAPACITANCE
0.8
TJ = 25°C
0.7
0.6				C,	10
0.6				C,				Cob
TJ = 125°C								Cob
0.5			IC/IB = 10
0.4			IC/IB = 5		1
0.01	0.10	1.00	10.00		1	10	100	1000
	IC, COLLECTOR CURRENT (AMPS)					VCE, COLLECTOR±EMITTER (VOLTS)

Figure 5. Base±Emitter Saturation Region

Figure 6. Capacitance

Motorola Bipolar Power Transistor Device Data

3

MJE18002 MJF18002

TYPICAL SWITCHING CHARACTERISTICS (IB2 = IC/2 for all switching)

	2500
		IB(off) = IC/2
	2000	VCC = 300 V
		PW = 20 μs
(ns)	1500					TJ = 125°C			(ns)
(ns)						TJ = 125°C			(ns)
t, TIME	1000		IC/IB = 5						t, TIME
			IC/IB = 10					TJ = 25°C
								TJ = 25°C
	500
	0
	0.4	0.6	0.8	1.0	1.2	1.4	1.6	1.8	2.0

IC, COLLECTOR CURRENT (AMPS)

4500
4000			IC/IB = 5			IB(off) = IC/2
3500			IC/IB = 5			VCC = 300 V
3500						PW = 20	μ
						PW = 20	s
3000
2500						TJ = 25°C
2000						TJ = 125°C
2000	IC/IB = 10
	IC/IB = 10
1500
1000
500
0
0.4	0.6	0.8	1.0	1.2	1.4	1.6	1.8	2.0
		IC, COLLECTOR CURRENT (AMPS)

Figure 7. Resistive Switching, ton

Figure 8. Resistive Switching, toff

	3000
		IB(off) = IC/2
	2500	VCC = 15 V				IC/IB = 5
		VZ = 300 V				IC/IB = 5
	2000	LC = 200 μH
	2000
(ns)
t, TIME	1500
t, TIME	1000
	1000
	500		I	/I = 10				TJ = 25°C
				C B				TJ = 125°C
								TJ = 125°C
	0
	0.4	0.6	0.8	1.0	1.2	1.4	1.6	1.8	2.0
			IC, COLLECTOR CURRENT (AMPS)

	2500
			IC = 1 A		IB(off) = IC/2
	2000				VCC = 15 V
(ns)					VZ = 300 V
(ns)					LC = 200 μH
TIME					LC = 200 μH
	1500

, STORAGE	1000
, STORAGE
si
t	500	IC = 0.4 A
	500	IC = 0.4 A			TJ = 25°C
					TJ = 125°C
	0
	5	7	9	11	13	15
			hFE, FORCED GAIN

Figure 9. Inductive Storage Time, tsi

Figure 10. Inductive Storage Time

	600
		IB(off) = IC/2
	500	VCC = 15 V						tc
		VZ = 300 V						tc
	400	LC = 200 μH
	400
(ns)								tfi
t, TIME	300
t, TIME							tc
	200						tc
	200
	100						tfi
	100							TJ = 25°C
								TJ = 25°C
	0							TJ = 125°C
	0
	0.4	0.6	0.8	1.0	1.2	1.4	1.6	1.8	2.0
			IC, COLLECTOR CURRENT (AMPS)

	450	IB(off) = IC/2
	400	IB(off) = IC/2					tc
	400	VCC = 15 V					tc
	350	VZ = 300 V						tfi
	300	LC = 200 μH
	300
(ns)	250		TJ = 25°C
TIME	200		TJ = 125°C
t,
	150							tc
	100					tfi
	50					tfi
	50
	0
	0.4	0.6	0.8	1.0	1.2	1.4	1.6	1.8	2.0

IC, COLLECTOR CURRENT (AMPS)

Figure 11. Inductive Switching, tc & tfi, IC/IB = 5

Figure 12. Inductive Switching, tc & tfi, IC/IB = 10

4	Motorola Bipolar Power Transistor Device Data

MJE18002 MJF18002

TYPICAL SWITCHING CHARACTERISTICS (IB2 = IC/2 for all switching)

	180											250
									IB(off) = IC/2			230
	160								VCC = 15 V			210
									VZ = 300 V		(ns)	210
	140								LC = 200 μH		(ns)	190
(ns)	140										TIME	170
(ns)					IC = 0.4 A						TIME	170
FALL, TIME	120				IC = 0.4 A						-OVER	150
	120											150
	100											130
	100									IC = 1 A
fi										IC = 1 A	CROSS	110
t											CROSS
											,
			TJ = 25°C								C	90
	80										T	90
	80
			TJ = 125°C									70
	60											50
	5	6	7	8	9	10	11	12	13	14	15

		IC = 1 A						IB(off) = IC/2
		IC = 1 A						VCC	= 15 V
								VZ = 300 V
								LC = 200 μH
	IC = 0.4 A
		TJ = 25°C
		TJ = 125°C
5	6	7	8	9	10	11	12	13	14	15

hFE, FORCED GAIN	hFE, FORCED GAIN
Figure 13. Inductive Fall Time	Figure 14. Inductive Crossover Time

GUARANTEED SAFE OPERATING AREA INFORMATION

	10.00			50 μs	10 μs 1 μs
		5 ms	1 ms	50 μs	10 μs 1 μs
(AMPS)		DC (MJE18002)
(AMPS)
CURRENT	1.00
		DC (MJF18002)

, COLLECTOR	0.10
, COLLECTOR
C
I
	0.01
	10		100		1000
		VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

	2.5
(AMPS)	2.0				TC ≤ 125°C
	2.0				IC/IB ≥ 4
					LC = 500 μH
CURRENT					LC = 500 μH
	1.5

COLLECTOR	1.0
COLLECTOR	0.5				V	BE(off)	= 0.5 V
,						BE(off)
C				0 V
I
						±1.5 V
	0					±1.5 V
	0
	0	200	400	600	800	1000		1200

VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

Figure 15. Forward Bias Safe Operating Area	Figure 16. Reverse Bias Switching Safe
	Operating Area

	1.0
							SECOND
FACTOR	0.8						BREAKDOWN
							DERATING
	0.6
DERATING	0.6
DERATING	0.4
POWER	0.2				THERMAL
	0.2				DERATING
					DERATING
	0
	20	40	60	80	100	120	140	160
			TC, CASE TEMPERATURE (°C)

Figure 17. Forward Bias Power Derating

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC±VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 15 is based on TC = 25°C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC > 25°C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 15 may be found at any case temperature by using the appropriate curve on Figure 17. TJ(pk) may be calculated from the data in Figures 20 and 21. At any case temperatures, thermal limitations will reduce the power that can be handled to values less the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turn±off with the base to emitter junction reverse biased. The safe level is specified as a reverse biased safe operating area (Figure 16). This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode.

Motorola Bipolar Power Transistor Device Data

5

Материал: MJE18002

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