Материал: MJL3281A

Внимание! Если размещение файла нарушает Ваши авторские права, то обязательно сообщите нам

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MJL3281A/D

Designer's Data	Sheet
Complementary	NPN-PNP
Silicon Power	Bipolar Transistor

•The MJL3281A and MJL1302A are PowerBase power transistors for high power audio, disk head positioners and other linear applications.

•Designed for 100 W Audio Frequency

•Gain Complementary:

ÐGain Linearity from 100 mA to 7 A

ÐHigh Gain Ð 60 to 175

Ðh FE = 45 (Min) @ IC = 8 A

•Low Harmonic Distortion

•High Safe Operation Area Ð 1 A/100 V @ 1 sec

•High fT Ð 30 MHz Typical

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

NPN

MJL3281A*

PNP

MJL1302A*

*Motorola Preferred Device

15 AMPERE

COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS

200 WATTS

CASE 340G±02, STYLE 2

TO±264

Rating	Symbol	Value	Unit

Collector±Emitter Voltage	VCEO	200	Vdc
Collector±Base Voltage	VCBO	200	Vdc
Emitter±Base Voltage	VEBO	7	Vdc
Collector±Emitter Voltage Ð 1.5 V	VCEX	200	Vdc
Collector Current Ð Continuous	IC	15	Adc
Collector Current Ð Peak (1)		25
Base Current Ð Continuous	IB	1.5	Adc
Total Power Dissipation @ TC = 25°C	PD	200	Watts
Derate Above 25°C		1.43	W/°C

Operating and Storage Junction Temperature Range	TJ, Tstg	± 65 to +150	°C

THERMAL CHARACTERISTICS

Characteristic	Symbol	Max	Unit

Thermal Resistance, Junction to Case	RθJC	0.7	°C/W

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle <10%.

Designer's Data for ªWorst Caseº Conditions Ð The Designer' s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves Ð representing boundaries on device characteristics Ð are given to facilitate ªworst caseº design.

Designer's is a trademark of Motorola, Inc.

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola, Inc. 1995

MJL3281A

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic	Symbol	Min	Typ	Max	Unit

OFF CHARACTERISTICS

Collector±Emitter Sustaining Voltage	VCEO(sus)	200	Ð	Ð	Vdc
(IC = 100 mAdc, IB = 0)
Emitter±Base Voltage	VEBO	7	Ð	Ð	Vdc
(IE = 100 μAdc, IC = 0)
Collector Cutoff Current	ICBO	Ð	Ð	50	μAdc
(VCB = 200 Vdc, IE = 0)
Emitter Cutoff Current	IEBO	Ð	Ð	5	μAdc
(VEB = 5 Vdc, IC = 0)
Emitter Cutoff Current	IEBO	Ð	Ð	25	μAdc
(VEB = 7 Vdc, IC = 0)
SECOND BREAKDOWN

Second Breakdown Collector with Base Forward Biased	IS/b	4	Ð	Ð	Adc
(VCE = 50 Vdc, t = 1 s (non±repetitive)		4	Ð	Ð
(VCE = 100 Vdc, t = 1 s (non±repetitive)		1	Ð	Ð
ON CHARACTERISTICS

DC Current Gain	hFE
(IC = 100 mAdc, VCE = 5 Vdc)		60	125	175
(IC = 1 Adc, VCE = 5 Vdc)		60	Ð	175
(IC = 3 Adc, VCE = 5 Vdc)		60	Ð	175
(IC = 5 Adc, VCE = 5 Vdc)		60	Ð	175
(IC = 7 Adc, VCE = 5 Vdc)		60	115	175
(IC = 8 Adc, VCE = 5 Vdc)		45	Ð	Ð
(IC = 15 Adc, VCE = 5 Vdc)		12	35	Ð
Collector±Emitter Saturation Voltage	VCE(sat)	Ð	Ð	3	Vdc
(IC = 10 Adc, IB = 1 Adc)
DYNAMIC CHARACTERISTICS

Current±Gain Ð Bandwidth Product	fT	Ð	30	Ð	MHz
(IC = 1 Adc, VCE = 5 Vdc, ftest = 1 MHz)
Output Capacitance	Cob	Ð	Ð	600	pF
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
(1) Pulse Test: Pulse Width = 300 μs, Duty Cycle ≤ 2%.

2	Motorola Bipolar Power Transistor Device Data

MJL3281A

TYPICAL CHARACTERISTICS

PNP MJL1302A

(MHz)	100
(MHz)
PRODUCT								VCE = 10 V
PRODUCT
GAIN BANDWIDTH	10							VCE = 5 V
GAIN BANDWIDTH
, CURRENT		TJ = 25°C
		ftest = 1 MHz
	1
T
f		1	2	3	4	5	6	7	8
	0	1	2	3	4	5	6	7	8

IC, COLLECTOR CURRENT (AMPS)

Figure 1. Current±Gain Ð Bandwidth Product

PNP MJL1302A

	1000
GAIN
CURRENT	100			VCE = 20 V
CURRENT				VCE = 20 V
, DC
FE
h
				VCE = 5 V
	10	1	10	100
	0.1	1	10	100

IC, COLLECTOR CURRENT (AMPS)

Figure 3. DC Current Gain

NPN MJL3281A

(MHz)	100
(MHz)
PRODUCT							VCE = 10 V
PRODUCT
BANDWIDTH	10
BANDWIDTH							VCE = 5 V
GAIN							VCE = 5 V
GAIN
, CURRENT		TJ = 25°C
		ftest = 1 MHz
	1
T
f		1	2	3	4	5	6	7	8
	0	1	2	3	4	5	6	7	8
			IC, COLLECTOR CURRENT (AMPS)

Figure 2. Current±Gain Ð Bandwidth Product

NPN MJL3281A

	1000
GAIN
, DC CURRENT	100		VCE = 20 V
	100

FE			VCE	= 5 V
h

	10	1	10	100
	0.1	1	10	100

IC, COLLECTOR CURRENT (AMPS)

Figure 4. DC Current Gain

PNP MJL1302A

	1000
				VCE = 5 V
GAIN			25°C
GAIN			100°C
CURRENT			100°C
	100		± 25°C
			± 25°C
, DC
FE
h
	10	1	10	100
	0.1	1	10	100
		IC, COLLECTOR CURRENT (AMPS)

Figure 5. DC Current Gain, VCE = 5 V

NPN MJL3281A

	1000
			VCE = 5 V
GAIN			25°C
GAIN			100°C
CURRENT			100°C
	100		± 25°C
			± 25°C
, DC
FE
h
	10	1	10	100
	0.1	1	10	100
		IC, COLLECTOR CURRENT (AMPS)

Figure 6. DC Current Gain, VCE = 5 V

Motorola Bipolar Power Transistor Device Data

MJL3281A

TYPICAL CHARACTERISTICS

PNP MJL1302A

(VOLTS)	1.8	TJ = 25°C
		TJ = 25°C

VOLTAGE	1.6
VOLTAGE
, BASE±EMITTER	1.4
, BASE±EMITTER	1.2
BE(on)
V
	1	11	12	13	14	15	16	17	18	19	20
	10	11	12	13	14	15	16	17	18	19	20
				IC, COLLECTOR CURRENT (AMPS)

Figure 7. Typical Base±Emitter Voltage

PNP MJL1302A

	20	TJ = 25°C		I	= 1 A
		TJ = 25°C		I	= 1 A				0.6 A
(AMPS)				B					0.6 A
	16	0.8 A								0.4 A
	16	0.8 A

CURRENT	12									0.2 A
	12

,COLLECTOR	8
,COLLECTOR	4
C	4
C
I
	0	1	2	3	4	5	6	7	8	9	10
	0	1	2	3	4	5	6	7	8	9	10
		VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

Figure 9. Typical Output Characteristics

	100
(AMPS)
CURRENT	10
CURRENT
,COLLECTOR	1
			250 ms
			1 s
C			1 s
C
I
	0.1	10	100	1000
	1	10	100	1000
		VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

Figure 11. Forward Bias Safe Operating Area (FBSOA)

NPN MJL3281A

(VOLTS)	3.2
	2.8	TJ = 25°C
	2.8

VOLTAGE	2.4
VOLTAGE	2
, BASE±EMITTER	2
	1.6
	1.2
	0.8
BE(on)	0.4
BE(on)
V
	0	2	4	6	8	10	12	14	16	18	20
	0	2	4	6	8	10	12	14	16	18	20

IC, COLLECTOR CURRENT (AMPS)

Figure 8. Typical Base±Emitter Voltage

NPN MJL3281A

	20
(AMPS)		IB = 1 A				0.6 A		0.4 A
	16	0.8 A
	16								0.2 A

CURRENT
	12

,COLLECTOR	8
,COLLECTOR	4
C	4
C
I									TJ = 25°C
									TJ = 25°C
	0	1	2	3	4	5	6	7	8	9	10
	0	1	2	3	4	5	6	7	8	9	10
			VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

Figure 10. Typical Output Characteristics

There are two limitations on the power handling ability of a transistor; average junction temperature and secondary breakdown. Safe operating area curves indicate IC ± VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Figure 11 is based on TJ(pk) = 200°C; TC is variable depending on conditions. At high case temperatures,

thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown.

4	Motorola Bipolar Power Transistor Device Data

MJL3281A

PACKAGE DIMENSIONS

		0.25 (0.010) M	T B M
	±B±	±Q±	±T±
	±B±
			C
		U	E
	N	U
	N
		A
R	1 2 3	L
R	1 2 3

±Y± P

F 2 PL

D 3 PL	H

0.25 (0.010) M Y Q S

NOTES:

1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2.CONTROLLING DIMENSION: MILLIMETER.

	MILLIMETERS		INCHES
DIM	MIN	MAX	MIN	MAX
A	2.8	2.9	1.102	1.142
B	19.3	20.3	0.760	0.800
C	4.7	5.3	0.185	0.209
D	0.93	1.48	0.037	0.058
E	1.9	2.1	0.075	0.083
F	2.2	2.4	0.087	0.102
G	5.45 BSC		0.215 BSC
H	2.6	3.0	0.102	0.118
J	0.43	0.78	0.017	0.031
K	17.6	18.8	0.693	0.740
L	11.0	11.4	0.433	0.449
N	3.95	4.75	0.156	0.187
P	2.2	2.6	0.087	0.102
Q	3.1	3.5	0.122	0.137
R	2.15	2.35	0.085	0.093
U	6.1	6.5	0.240	0.256
W	2.8	3.2	0.110	0.125

STYLE 2:

PIN 1. BASE

2.COLLECTOR

3.EMITTER

CASE 340G±02

TO±264

ISSUE E

Motorola Bipolar Power Transistor Device Data

Источник: https://studfile.net/preview/16503918/

Смотрите также:

_3 тема - Диффузия
01. Концепция БД
02_ЛР
05. Частная патология ССС - Инфаркт миокарда
0501 Конунников ЛР10-3
06-20-DatabasesGenomEvolution
07
07-20-FunctionGenomApplic-Metagenom
07. ПА_Лекция 7_Патология энд.жел
09_ЛР