Материал: mgy25n120rev1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MGY25N120/D
Designer's Data Sheet
Insulated Gate Bipolar Transistor
N±Channel Enhancement±Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage±blocking capability. Short circuit rated IGBT's are specifically suited for applications requiring a guaranteed short circuit withstand time. Fast switching characteristics result in efficient operation at high frequencies.
MGY25N120
Motorola Preferred Device
IGBT IN TO±264
25 A @ 90°C
38 A @ 25°C
1200 VOLTS
SHORT CIRCUIT RATED
•Industry Standard High Power TO±264 Package (TO±3PBL)
•High Speed Eoff: 273 mJ/A typical at 125°C
•High Short Circuit Capability ± 10 ms minimum
•Robust High Voltage Termination
G 
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
C |
G |
C |
E |
E |
CASE 340G±02, Style 5 |
TO±264 |
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Rating |
Symbol |
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Value |
Unit |
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Collector±Emitter Voltage |
VCES |
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1200 |
Vdc |
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Collector±Gate Voltage (RGE = 1.0 MW) |
VCGR |
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1200 |
Vdc |
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Gate±Emitter Voltage Ð Continuous |
VGE |
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±20 |
Vdc |
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Collector Current Ð |
Continuous @ T C = 25°C |
IC25 |
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38 |
Adc |
Ð |
Continuous @ T C = 90°C |
IC90 |
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25 |
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Ð Repetitive Pulsed Current (1) |
ICM |
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76 |
Apk |
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Total Power Dissipation @ TC = 25°C |
PD |
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212 |
Watts |
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Derate above 25°C |
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1.69 |
W/°C |
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Operating and Storage Junction Temperature Range |
TJ, Tstg |
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± 55 to 150 |
°C |
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Short Circuit Withstand Time |
tsc |
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10 |
ms |
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(VCC = 720 Vdc, VGE = 15 Vdc, TJ = 125°C, RG = 20 W) |
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Thermal Resistance |
Ð Junction to Case ± IGBT |
RqJC |
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0.6 |
°C/W |
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Ð Junction to Ambient |
RqJA |
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35 |
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Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds |
TL |
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260 |
°C |
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Mounting Torque, 6±32 or M3 screw |
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10 lbfSin (1.13 NSm) |
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(1) Pulse width is limited by maximum junction temperature. Repetitive rating.
Designer's Data for ªWorst Caseº Conditions Ð The Designer' s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves Ð representing boundaries on device characteristics Ð are given to facilitate ªworst caseº design.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola, Inc. 1996
MGY25N120
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic |
Symbol |
Min |
Typ |
Max |
Unit |
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OFF CHARACTERISTICS |
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Collector±to±Emitter Breakdown Voltage |
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BVCES |
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Vdc |
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(VGE = 0 Vdc, IC = 25 mAdc) |
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1200 |
Ð |
Ð |
mV/°C |
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Temperature Coefficient (Positive) |
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Ð |
960 |
Ð |
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Emitter±to±Collector Breakdown Voltage (VGE = 0 Vdc, IEC = 100 mAdc) |
BVECS |
25 |
Ð |
Ð |
Vdc |
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Zero Gate Voltage Collector Current |
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ICES |
Ð |
Ð |
100 |
mAdc |
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(VCE = 1200 Vdc, VGE = 0 Vdc) |
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(VCE = 1200 Vdc, VGE = 0 Vdc, TJ = 125°C) |
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Ð |
Ð |
2500 |
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Gate±Body Leakage Current (VGE = ± 20 Vdc, VCE = 0 Vdc) |
IGES |
Ð |
Ð |
250 |
nAdc |
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ON CHARACTERISTICS (1) |
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Collector±to±Emitter On±State Voltage |
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VCE(on) |
Ð |
2.37 |
3.24 |
Vdc |
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(VGE = 15 Vdc, IC = 12.5 Adc) |
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(VGE = 15 Vdc, IC = 12.5 Adc, TJ = 125°C) |
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Ð |
2.15 |
Ð |
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(VGE = 15 Vdc, IC = 25 Adc) |
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Ð |
2.98 |
4.19 |
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Gate Threshold Voltage |
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VGE(th) |
4.0 |
6.0 |
8.0 |
Vdc |
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(VCE = VGE, IC = 1.0 mAdc) |
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mV/°C |
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Threshold Temperature Coefficient (Negative) |
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Ð |
10 |
Ð |
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Forward Transconductance (VCE = 10 Vdc, IC = 25 Adc) |
gfe |
Ð |
12 |
Ð |
Mhos |
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DYNAMIC CHARACTERISTICS |
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Input Capacitance |
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(VCE = 25 Vdc, VGE = 0 Vdc, |
Cies |
Ð |
2795 |
Ð |
pF |
Output Capacitance |
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Coes |
Ð |
181 |
Ð |
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f = 1.0 MHz) |
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Transfer Capacitance |
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Cres |
Ð |
45 |
Ð |
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SWITCHING CHARACTERISTICS (1) |
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Turn±On Delay Time |
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td(on) |
Ð |
91 |
Ð |
ns |
Rise Time |
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(VCC = 720 Vdc, IC = 25 Adc, |
tr |
Ð |
124 |
Ð |
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VGE = 15 Vdc, L = 300 mH |
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Turn±Off Delay Time |
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td(off) |
Ð |
196 |
Ð |
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RG = 20 W, TJ = 25°C) |
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Fall Time |
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Energy losses include ªtailº |
tf |
Ð |
310 |
Ð |
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Turn±Off Switching Loss |
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Eoff |
Ð |
2.44 |
4.69 |
mJ |
Turn±On Delay Time |
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td(on) |
Ð |
88 |
Ð |
ns |
Rise Time |
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(VCC = 720 Vdc, IC = 25 Adc, |
tr |
Ð |
126 |
Ð |
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VGE = 15 Vdc, L = 300 mH |
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Turn±Off Delay Time |
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td(off) |
Ð |
236 |
Ð |
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RG = 20 W, TJ = 125°C) |
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Fall Time |
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Energy losses include ªtailº |
tf |
Ð |
640 |
Ð |
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Turn±Off Switching Loss |
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Eoff |
Ð |
5.40 |
Ð |
mJ |
Gate Charge |
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(VCC = 720 Vdc, IC = 25 Adc, |
QT |
Ð |
97 |
Ð |
nC |
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Q1 |
Ð |
31 |
Ð |
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VGE = 15 Vdc) |
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Q2 |
Ð |
40 |
Ð |
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INTERNAL PACKAGE INDUCTANCE |
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Internal Emitter Inductance |
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LE |
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nH |
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(Measured from the emitter lead 0.25″ |
from package to emitter bond pad) |
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Ð |
13 |
Ð |
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(1) Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
2 |
Motorola TMOS Power MOSFET Transistor Device Data |
MGY25N120
TYPICAL ELECTRICAL CHARACTERISTICS
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75 |
TJ = 25°C |
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VGE = 20 V |
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17.5 V |
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75 |
(AMPS) |
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15 V |
(AMPS) |
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60 |
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60 |
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CURRENT |
45 |
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12.5 V |
CURRENT |
45 |
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, COLLECTOR |
30 |
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, COLLECTOR |
30 |
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10 V |
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15 |
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15 |
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C |
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C |
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I |
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I |
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0 |
1 |
2 |
3 |
4 |
5 |
6 |
7 |
8 |
0 |
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0 |
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VCE, COLLECTOR±TO±EMITTER VOLTAGE (VOLTS) |
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TJ = 125°C |
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VGE = 20 V |
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17.5 V |
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15 V |
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12.5 V |
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10 V |
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0 |
1 |
2 |
3 |
4 |
5 |
6 |
7 |
8 |
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VCE, COLLECTOR±TO±EMITTER VOLTAGE (VOLTS) |
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Figure 1. Output Characteristics, TJ = 25°C |
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70 |
VCE = 10 V |
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(AMPS) |
60 |
250 μs PULSE WIDTH |
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50 |
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TJ = 125°C |
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CURRENT |
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40 |
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, COLLECTOR |
30 |
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20 |
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25°C |
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C |
10 |
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I |
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0 |
6 |
8 |
10 |
12 |
14 |
16 |
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4 |
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VGE, GATE±TO±EMITTER VOLTAGE (VOLTS)
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Figure 2. Output Characteristics, TJ = 125°C |
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(VOLTS) |
4 |
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VGE = 15 V |
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VOLTAGE |
250 |
μs PULSE WIDTH |
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IC = 20 A |
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3 |
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, COLLECTOR±TO±EMITTER |
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15 A |
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10 A |
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2 |
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CE |
1 |
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V |
± 50 |
0 |
50 |
100 |
150 |
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TJ, JUNCTION TEMPERATURE (°C) |
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Figure 3. Transfer Characteristics |
Figure 4. Collector±to±Emitter Saturation |
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Voltage versus Junction Temperature |
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10000 |
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= 0 V |
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° |
(VOLTS) |
16 |
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V |
CE |
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TJ = 25 C |
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Cies |
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14 |
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GATE±TO±EMITTER VOLTAGE |
12 |
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C, CAPACITANCE (pF) |
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1000 |
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10 |
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Coes |
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8 |
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100 |
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Cres |
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6 |
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4 |
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, |
2 |
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GE |
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10 |
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V |
0 |
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5 |
10 |
15 |
20 |
25 |
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0 |
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GATE±TO±EMITTER OR COLLECTOR±TO±EMITTER VOLTAGE (VOLTS) |
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QT |
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Q1 |
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Q2 |
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TJ = 25°C |
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IC = 25 A |
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0 |
5 |
10 |
15 |
20 |
25 |
30 |
35 |
40 |
45 |
50 |
55 |
60 |
65 |
70 |
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Qg, TOTAL GATE CHARGE (nC) |
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Figure 5. Capacitance Variation |
Figure 6. Gate±to±Emitter Voltage versus |
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Total Charge |
Motorola TMOS Power MOSFET Transistor Device Data |
3 |
MGY25N120 |
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(mJ) |
6 |
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IC = 25 A |
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(mJ) |
7 |
5.5 |
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LOSSES |
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LOSSES |
6 |
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5 |
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VCC = 720 V |
5 |
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VGE = 15 V |
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ENERGY |
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ENERGY |
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4.5 |
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TJ = 125°C |
4 |
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4 |
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IC = 25 A |
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15 A |
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SWITCHING |
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SWITCHING |
3 |
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3.5 |
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3 |
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10 A |
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TOTAL |
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TOTAL |
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2.5 |
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1 |
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2 |
20 |
30 |
40 |
50 |
0 |
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10 |
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RG, GATE RESISTANCE (OHMS) |
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VCC = 720 V |
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VGE = 15 V |
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RG = 20 Ω |
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IC = 25 A |
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15 A |
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10 A |
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25 |
50 |
75 |
100 |
125 |
150 |
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TC, CASE TEMPERATURE (°C) |
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Figure 7. Total Switching Losses versus |
Figure 8. Total Switching Losses versus |
Gate Resistance |
Case Temperature |
TURN±OFF ENERGY LOSSES (mJ)
7
VCC = 720 V
6VGE = 15 V RG = 20 Ω
°CTJ = 125
5
4
3
2
1
0
0 |
5 |
10 |
15 |
20 |
25 |
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IC, COLLECTOR±TO±EMITTER CURRENT (AMPS) |
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I , INSTANTANEOUS FORWARD CURRENT (AMPS) F
50 |
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40 |
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30 |
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TJ = 125°C |
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TJ = 25°C |
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20 |
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10 |
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0 |
1 |
2 |
3 |
4 |
5 |
0 |
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VFM, FORWARD VOLTAGE DROP (VOLTS) |
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Figure 9. Turn±Off Losses versus |
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Figure 10. Maximum Forward Drop versus |
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Collector±to±Emitter Current |
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Instantaneous Forward Current |
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CURRENT (A) |
100 |
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COLLECTOR±TO±EMITTER, |
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1 |
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TJ = |
125 |
°C |
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VGE |
= 15 V |
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RGE |
= 20 Ω |
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C |
0.1 |
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I |
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1 |
10 |
100 |
1000 |
||||||||||||||||||||||||||
VCE, COLLECTOR±TO±EMITTER VOLTAGE (VOLTS)
Figure 11. Reverse Biased
Safe Operating Area
4 |
Motorola TMOS Power MOSFET Transistor Device Data |
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MGY25N120 |
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1.0 |
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TRANSIENT THERMAL RESISTANCE |
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D = 0.5 |
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r(t), NORMALIZED EFFECTIVE |
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0.2 |
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0.1 |
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0.1 |
0.05 |
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P(pk) |
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0.02 |
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RθJC(t) = r(t) RθJC |
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0.01 |
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D CURVES APPLY FOR POWER |
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t1 |
PULSE TRAIN SHOWN |
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SINGLE PULSE |
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READ TIME AT t1 |
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t2 |
TJ(pk) ± TC = P(pk) RθJC(t) |
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DUTY CYCLE, D = t1/t2 |
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0.01 |
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1.0E±05 |
1.0E±04 |
1.0E±03 |
1.0E±02 |
1.0E±01 |
1.0E+00 |
1.0E+01 |
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t, TIME (s)
Figure 12. Thermal Response
Motorola TMOS Power MOSFET Transistor Device Data |
5 |