Материал: mrf321rev0
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF321/D
The RF Line
NPN Silicon
RF Power Transistor
. . . designed primarily for wideband large±signal driver and predriver amplifier stages in 200±500 MHz frequency range.
•Guaranteed Performance at 400 MHz, 28 Vdc Output Power = 10 Watts
Power Gain = 12 dB Min Efficiency = 50% Min
•100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
•Gold Metallization System for High Reliability
•Computer±Controlled Wirebonding Gives Consistent Input Impedance
MAXIMUM RATINGS
Rating |
Symbol |
Value |
Unit |
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Collector±Emitter Voltage |
VCEO |
33 |
Vdc |
Collector±Base Voltage |
VCBO |
60 |
Vdc |
Emitter±Base Voltage |
VEBO |
4.0 |
Vdc |
Collector Current Ð Continuous |
IC |
1.1 |
Adc |
Collector Current Ð Peak |
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1.5 |
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Total Device Dissipation @ TA = 25°C (1) |
PD |
27 |
Watts |
Derate above 25°C |
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160 |
mW/°C |
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Storage Temperature Range |
Tstg |
± 65 to +150 |
°C |
THERMAL CHARACTERISTICS
MRF321
10 W, 400 MHz RF POWER TRANSISTOR NPN SILICON
CASE 244±04, STYLE 1
Characteristic |
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Symbol |
Max |
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Unit |
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Thermal Resistance, Junction to Case |
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RθJC |
6.4 |
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°C/W |
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) |
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Characteristic |
Symbol |
Min |
Typ |
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Max |
Unit |
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OFF CHARACTERISTICS |
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Collector±Emitter Breakdown Voltage |
V(BR)CEO |
33 |
Ð |
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Ð |
Vdc |
(IC = 20 mAdc, IB = 0) |
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Collector±Emitter Breakdown Voltage |
V(BR)CES |
60 |
Ð |
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Ð |
Vdc |
(IC = 20 mAdc, VBE = 0) |
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Collector±Base Breakdown Voltage |
V(BR)CBO |
60 |
Ð |
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Ð |
Vdc |
(IC = 20 mAdc, IE = 0) |
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Emitter±Base Breakdown Voltage |
V(BR)EBO |
4.0 |
Ð |
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Ð |
Vdc |
(IE = 2.0 mAdc, IC = 0) |
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Collector Cutoff Current |
ICBO |
Ð |
Ð |
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1.0 |
mAdc |
(VCB = 30 Vdc, IE = 0) |
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ON CHARACTERISTICS |
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DC Current Gain |
hFE |
20 |
Ð |
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80 |
Ð |
(IC = 500 mA, VCE = 5.0 Vdc) |
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NOTE: |
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(continued) |
1.This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
Motorola, Inc. 1994
ELECTRICAL CHARACTERISTICS Ð continued (TC = 25°C unless otherwise noted.)
Characteristic |
Symbol |
Min |
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Typ |
Max |
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Unit |
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DYNAMIC CHARACTERISTICS |
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Output Capacitance |
Cob |
Ð |
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10 |
12 |
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pF |
(VCB = 28 Vdc, IE = 0, f = 1.0 MHz) |
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FUNCTIONAL TESTS (Figure 1) |
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Common±Emitter Amplifier Power Gain |
GPE |
12 |
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13 |
Ð |
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dB |
(VCC = 28 Vdc, Pout = 10 W, f = 400 MHz) |
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Collector Efficiency |
h |
50 |
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60 |
Ð |
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% |
(VCC = 28 Vdc, Pout = 10 W, f = 400 MHz) |
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Load Mismatch |
y |
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(VCC = 28 Vdc, Pout = 10 W, f = 400 MHz, |
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No Degradation in Output Power |
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VSWR = 30:1 all phase angles) |
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R2 |
R3 |
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L4 |
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+ |
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+ |
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5 V |
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C11 |
C12 |
+ |
28 V |
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± |
D1 |
R4 |
C9 |
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± |
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C10 |
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C13 |
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L3 |
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± |
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L1 |
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C8 |
RF |
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Z3 |
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Z4 |
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OUTPUT |
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DUT |
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RF |
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Z1 |
Z2 |
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L2 |
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INPUT |
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C5 |
C6 |
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C7 |
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C1 |
C2 |
C3 |
C4 |
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R1 |
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C1, C2, C3 Ð 1.0± 20 pF Johanson Trimmer (JMC 5501) |
L3 Ð 6 Turns #20 Enamel, 1/4 ″ |
ID |
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C3, C4 Ð 47 pF ATC Chip Capacitor |
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L4 Ð Ferroxcube VK200±19/4B |
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C5, C10 Ð 0.1 mF Erie Redcap |
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R1 Ð 5.1 W, 1/4 Watt |
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C7 Ð 0.5± 10 pF Johanson Trimmer (JMC 5201) |
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R2 Ð 120 W, 1.0 Watt |
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C8 Ð 0.018 mF Vitramon Chip Capacitor |
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R3 Ð 20 W, 1/2 Watt |
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C9 Ð 200 pF UNELCO Capacitor |
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R4 Ð 47 W, 1/2 Watt |
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C11, C12 Ð 680 pF Feedthru |
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Z1 Ð Microstrip 0.1 ″ |
W x 1.35″ |
L |
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C13 Ð 1.0 mF, 50 Volt Tantalum Capacitor |
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D1 Ð 1N4001 |
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Z2 Ð Microstrip 0.1 ″ |
W x 0.55″ |
L |
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Z3 Ð Microstrip 0.1 ″ |
W x 0.8″ L |
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L1 Ð 0.33 mH Molded Choke with Ferroxcube Bead |
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Z4 Ð Microstrip 0.1 ″ |
W x 1.75″ |
L |
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L1 Ð (Ferroxcube 56±590±65/4B) on Ground End of Coil |
Board Ð Glass Teflon, eR = 2.56, t = 0.062″ |
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L2 Ð 4 Turns #20 Enamel, 1/8 ″ |
ID |
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Input/Output Connectors Ð Type N |
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Figure 1. 400 MHz Test Circuit Schematic
MRF321 |
MOTOROLA RF DEVICE DATA |
2 |
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Pout, OUTPUT POWER (WATTS)
12 |
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12 |
f = 200 MHz |
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400 |
500 |
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(WATTS) |
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10 |
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Pin = 1 W |
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10 |
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POWER |
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8 |
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0.7 W |
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8 |
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OUTPUT, |
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6 |
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0.4 W |
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6 |
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0.5 W |
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4 |
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out |
4 |
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0.3 W |
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P |
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VCC = 28 V |
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VCC = 28 V |
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0.1 W |
0.2 W |
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2 |
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2 |
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200 |
300 |
400 |
500 |
600 |
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300 |
600 |
900 |
1200 |
1500 |
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100 |
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0 |
f, FREQUENCY (MHz) |
Pin, INPUT POWER (mW) |
Figure 2. Output Power versus Frequency |
Figure 3. Output Power versus Input Power |
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12 |
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22 |
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out |
4 |
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AMPLIFIEREMITTERCOMMON, |
(dB)GAINPOWER |
6 |
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Po = 10 W |
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VCC = 28 V |
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(WATTS) |
10 |
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18 |
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Pin = 0.5 W |
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POWER |
8 |
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14 |
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OUTPUT, |
6 |
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0.35 W |
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10 |
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P |
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f = 400 MHz |
PE |
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G |
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2 |
14 |
18 |
22 |
26 |
30 |
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2 |
200 |
300 |
400 |
500 |
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10 |
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VCC, SUPPLY VOLTAGE (VOLTS) |
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f, FREQUENCY (MHz) |
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Figure 4. Output Power versus Supply Voltage |
Figure 5. Power Gain versus Frequency |
MOTOROLA RF DEVICE DATA |
MRF321 |
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3 |
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0 |
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± 5 |
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400 |
5 |
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f = 200 MHz |
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± 10 |
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Zin |
500 |
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Po = 10 W, VCC = 28 V |
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5 |
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f |
Zin |
ZOL* |
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MHz |
Ohms |
Ohms |
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200 |
0.68 ± j0.75 |
14.2 |
± j22 |
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400 |
0.89 + j2.7 |
9.8 |
± j14.4 |
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500 |
1.3 + j4.3 |
9.3 |
± j13 |
10 |
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500
400
15
ZOL*
20
f = 200 MHz
25
ZOL* = Conjugate of the optimum load impedance into which the device output operates at a given output power, ZOL* = voltage and frequency.
Figure 6. Series Equivalent Impedance
MRF321 |
MOTOROLA RF DEVICE DATA |
4 |
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PACKAGE DIMENSIONS
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2 |
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3 |
1 |
D |
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4 |
K |
M
T |
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A |
J |
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F |
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SEATING PLANE |
C |
P |
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U |
S |
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8±32 NC 2A |
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WRENCH FLAT |
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E |
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B |
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CASE 244±04
ISSUE J
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MILLIMETERS |
INCHES |
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DIM |
MIN |
MAX |
MIN |
MAX |
A |
7.06 |
7.26 |
0.278 |
0.286 |
B |
6.20 |
6.50 |
0.244 |
0.256 |
C |
14.99 |
16.51 |
0.590 |
0.650 |
D |
5.46 |
5.96 |
0.215 |
0.235 |
E |
1.40 |
1.65 |
0.055 |
0.065 |
G |
1.52 |
±±± |
0.060 |
±±± |
J |
0.08 |
0.17 |
0.003 |
0.007 |
K |
11.05 |
±±± |
0.435 |
±±± |
M |
45 |
NOM |
45 |
NOM |
P |
±±± |
1.27 |
±±± |
0.050 |
S |
3.00 |
3.25 |
0.118 |
0.128 |
T |
1.40 |
1.77 |
0.055 |
0.070 |
U |
2.92 |
3.68 |
0.115 |
0.145 |
STYLE 1:
PIN 1. EMITTER
2.BASE
3.EMITTER
4.COLLECTOR
MOTOROLA RF DEVICE DATA |
MRF321 |
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