Материал: mrf448rev0d
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF448/D
The RF Line
NPN Silicon
RF Power Transistor
Designed primarily for high±voltage applications as a high±power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment.
•Specified 50 Volt, 30 MHz Characteristics Output Power = 250 W
Minimum Gain = 12 dB Efficiency = 45%
•Intermodulation Distortion @ 250 W (PEP) Ð IMD = ±30 dB (Max)
•100% Tested for Load Mismatch at all Phase Angles with 3:1 VSWR
MAXIMUM RATINGS
MRF448
250 W, 30 MHz RF POWER TRANSISTOR NPN SILICON
CASE 211±11, STYLE 1
Rating |
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Symbol |
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Value |
Unit |
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Collector±Emitter Voltage |
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VCEO |
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50 |
Vdc |
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Collector±Base Voltage |
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VCBO |
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100 |
Vdc |
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Emitter±Base Voltage |
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VEBO |
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4.0 |
Vdc |
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Collector Current Ð Continuous |
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IC |
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16 |
Adc |
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Withstand Current Ð 10 s |
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Ð |
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20 |
Adc |
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Total Device Dissipation @ TC = 25°C (1) |
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PD |
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290 |
Watts |
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Derate above 25°C |
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1.67 |
W/°C |
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Storage Temperature Range |
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Tstg |
± 65 to +150 |
°C |
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THERMAL CHARACTERISTICS |
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Characteristic |
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Symbol |
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Max |
Unit |
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Thermal Resistance, Junction to Case |
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RθJC |
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0.6 |
°C/W |
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) |
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Characteristic |
Symbol |
Min |
Typ |
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Max |
Unit |
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OFF CHARACTERISTICS |
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Collector±Emitter Breakdown Voltage (IC = 200 mAdc, IB = 0) |
V(BR)CEO |
50 |
Ð |
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Ð |
Vdc |
Collector±Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0) |
V(BR)CES |
100 |
Ð |
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Ð |
Vdc |
Collector±Base Breakdown Voltage (IC = 100 mAdc, IE = 0) |
V(BR)CBO |
100 |
Ð |
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Ð |
Vdc |
Emitter±Base Breakdown Voltage (IE = 10 mAdc, IC = 0) |
V(BR)EBO |
4.0 |
Ð |
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Ð |
Vdc |
NOTE: |
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(continued) |
1.PD is a measurement reflecting short term maximum condition. See SOAR curve for operating conditions.
Motorola, Inc. 1994
ELECTRICAL CHARACTERISTICS Ð continued (TC = 25°C unless otherwise noted.)
Characteristic |
Symbol |
Min |
Typ |
Max |
Unit |
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ON CHARACTERISTICS
DC Current Gain |
hFE |
10 |
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30 |
Ð |
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Ð |
(IC = 5.0 Adc, VCE = 10 Vdc) |
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DYNAMIC CHARACTERISTICS |
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Output Capacitance |
Cob |
Ð |
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350 |
450 |
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pF |
(VCB = 50 Vdc, IE = 0, f = 1.0 MHz) |
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FUNCTIONAL TESTS |
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Common±Emitter Amplifier Power Gain |
GPE |
12 |
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14 |
Ð |
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dB |
(VCC = 50 Vdc, Pout = 250 W CW, f = 30 MHz, ICQ = 250 mA) |
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Collector Efficiency |
h |
Ð |
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45 |
Ð |
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% (PEP) |
(VCC = 50 Vdc, Pout = 250 W, f = 30 MHz, ICQ = 250 mA) |
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Ð |
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65 |
Ð |
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% (CW) |
Intermodulation Distortion (2) |
IMD |
Ð |
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± 33 |
± 30 |
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dB |
(VCE = 50 Vdc, Pout = 250 W (PEP), ICQ = 250 mA, f = 30 MHz) |
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Electrical Ruggedness |
y |
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(VCC = 50 Vdc, Pout = 250 W CW, f = 30 MHz, |
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No Degradation in Output Power |
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VSWR 3:1 at all Phase Angles) |
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NOTE: |
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2. To Mil±Std±1311 Version A, Test Method 2204, Two Tone, Reference each Tone.
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R1 |
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L5 |
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L6 |
+ |
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+ |
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BIAS |
C3 |
C4 |
+ |
CR1 |
C8 |
C9 |
+ |
50 Vdc |
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C10 |
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± |
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L3 |
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± |
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L2 |
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± |
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D.U.T. |
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L4 |
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RF |
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L1 |
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RF |
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OUTPUT |
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INPUT |
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C2 |
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C1 |
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R2 |
C5 |
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C7 |
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C6 |
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C1, C2, C5, C7 Ð 170± 780 pF, Arco 469 |
CR1 Ð 1N4997 or equivalent |
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C3, C8, C9 Ð 0.1 mF, 100 V Erie |
L1 |
Ð 3 |
Turns, #16 Wire, 0.4 ″ I.D., 0.3″ Long |
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C4 |
Ð 500 |
mF @ 6.0 V |
L2 |
Ð 0.8 mH, Ohmite Z±235 or equivalent |
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C6 |
Ð 360 pF, 3 x 120 pF 3.0 kV in parallel |
L3 |
Ð 12 T urns, #16 Enameled Wire Closewound 0.25″ I.D. |
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C10 Ð 10 |
mF, 100 V |
L4 |
Ð 4 |
Turns, 1/8 ″ Copper Tubing, 0.6″ I.D., 1.0″ Long |
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R1 |
Ð 10 |
W, 10 Watt |
L5, L6 |
Ð 2.0 mH, Fair±Rite 2643021801 Ferrite bead each or equivalent |
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R2 |
Ð 10 |
W, 1.0 Watt |
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Figure 1. 30 MHz Test Circuit Schematic
MRF448 |
MOTOROLA RF DEVICE DATA |
2 |
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400 |
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CW) |
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f = 30 MHz |
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300 |
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ICQ = 250 mA |
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VCC = 50 V |
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(WATTS |
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40 V |
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OUTPUT POWER |
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200 |
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100 |
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, |
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out |
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P |
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0 |
0 |
4 |
8 |
12 |
16 |
20 |
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400 |
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PEP) |
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f = 30, 30.001 MHz |
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IMD = ±30 dB |
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300 |
ICQ = 250 mA |
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(WATTS |
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IMD = d3 |
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POWER |
200 |
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± 35 dB |
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, OUTPUT |
100 |
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out |
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P |
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020 |
30 |
40 |
50 |
60 |
Pin, INPUT POWER (WATTS) |
VCC, SUPPLY VOLTAGE (VOLTS) |
Figure 2. Output Power versus Input Power |
Figure 3. Output Power versus Supply Voltage |
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25 |
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400 |
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CW) |
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f = 30 MHz |
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20 |
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350 |
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ICQ = 250 mA |
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POWER(WATTS |
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VCC = 50 V |
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POWERGAIN (dB) |
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10 |
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V |
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= 50 V |
250 |
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TC = 50°C |
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15 |
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300 |
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G |
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P |
CC |
= 250 W |
OUTPUT, |
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° |
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, |
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PE |
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ICQ = 250 mA |
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100 C |
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5 |
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out |
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out |
200 |
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P |
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0 |
4 |
7 |
10 |
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15 |
30 |
150 |
3 |
5 |
10 |
30 |
50 |
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2 |
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1 |
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f, FREQUENCY (MHz) |
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OUTPUT VSWR |
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Figure 4. Power Gain versus Frequency |
Figure 5. RF SOAR (Class AB) |
Pout versus Output VSWR
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250 |
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VCC = 30 V |
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200 |
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15 V |
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(MHz) |
150 |
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T |
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f |
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100 |
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50 |
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0 |
5 |
10 |
15 |
20 |
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0 |
IC, COLLECTOR CURRENT (AMPS)
Figure 6. fT versus Collector Current
(dB) |
± 25 |
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VCC = 50 V |
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DISTORTION |
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± 30 |
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f = 30, 30.001 MHz |
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± 35 |
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d3 |
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IMD, INTERMODULATION |
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± 40 |
d5 |
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± 45 |
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± 5025 |
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75 |
125 |
175 |
225 |
275 |
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Pout, OUTPUT POWER (WATTS PEP)
Figure 7. IMD versus Pout
MOTOROLA RF DEVICE DATA |
MRF448 |
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3 |
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20 |
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CP |
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5000 |
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PARALLEL EQUIVALENT OUTPUT |
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VCC = 50 V |
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PARALLEL EQUIVALENT OUTPUT |
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16 |
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ICQ = 250 mA |
4000 |
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Pout = 250 W PEP |
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RESISTANCE (OHMS) |
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12 |
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3000 |
CAPACITANCE (pF) |
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RP |
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8 |
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2000 |
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4 |
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1000 |
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, |
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, |
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out |
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out |
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R |
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C |
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0 |
2 |
4 |
7 |
10 |
15 |
20 |
0 |
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1.5 |
30 |
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f, FREQUENCY (MHz)
Figure 8. Output Resistance and Capacitance
versus Frequency
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30 |
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VCC = 50 V |
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ICQ = 150 mA |
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15 |
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Pout = 250 W PEP |
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7.0 |
Zo = 10 Ω |
f |
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Zin |
MHz |
Ohms |
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2.0 |
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4.50 ± j1.40 |
4.0 |
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4.0 |
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3.10 ± j1.80 |
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7.0 |
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1.70 ± j1.75 |
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f = 2.0 MHz |
15 |
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0.80 ± j1.25 |
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30 |
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0.60 ± j0.75 |
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Figure 9. Series Equivalent Impedance
MRF448 |
MOTOROLA RF DEVICE DATA |
4 |
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PACKAGE DIMENSIONS
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A |
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NOTES: |
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U |
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1. DIMENSIONING AND TOLERANCING PER ANSI |
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M |
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Y14.5M, 1982. |
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2. CONTROLLING DIMENSION: INCH. |
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1 |
M |
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INCHES |
MILLIMETERS |
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Q |
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4 |
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DIM |
MIN |
MAX |
MIN |
MAX |
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A |
0.960 |
0.990 |
24.39 |
25.14 |
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R |
B |
B |
0.465 |
0.510 |
11.82 |
12.95 |
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C |
0.229 |
0.275 |
5.82 |
6.98 |
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D |
0.216 |
0.235 |
5.49 |
5.96 |
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E |
0.084 |
0.110 |
2.14 |
2.79 |
2 |
3 |
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H |
0.144 |
0.178 |
3.66 |
4.52 |
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J |
0.003 |
0.007 |
0.08 |
0.17 |
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D |
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K |
0.435 |
±±± |
11.05 |
±±± |
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M |
45 |
NOM |
45 |
NOM |
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K |
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Q |
0.115 |
0.130 |
2.93 |
3.30 |
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R |
0.246 |
0.255 |
6.25 |
6.47 |
J |
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U |
0.720 |
0.730 |
18.29 |
18.54 |
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C |
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STYLE 1: |
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H |
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PIN 1. |
EMITTER |
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E |
SEATING |
2. |
BASE |
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3. |
EMITTER |
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PLANE |
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4. |
COLLECTOR |
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CASE 211±11
ISSUE N
MOTOROLA RF DEVICE DATA |
MRF448 |
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5 |