Материал: 9003
Philips Semiconductors |
Product specification |
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Silicon Diffused Power Transistor |
BUT211 |
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GENERAL DESCRIPTION
Enhanced performance, new generation, high speed switching npn transistor in TO220AB envelope specially suited for high frequency electronic lighting ballast applications.
QUICK REFERENCE DATA
SYMBOL |
PARAMETER |
CONDITIONS |
TYP. |
MAX. |
UNIT |
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VCESM |
Collector-emitter voltage peak value |
VBE = 0 V |
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850 |
V |
VCEO |
Collector-emitter voltage (open base) |
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400 |
V |
IC |
Collector current (DC) |
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5 |
A |
ICM |
Collector current peak value |
Tmb ≤ 25 ˚C |
- |
10 |
A |
Ptot |
Total power dissipation |
- |
100 |
W |
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VCEsat |
Collector-emitter saturation voltage |
IC = 3.0 A; IB = 0.3 A |
- |
2.0 |
V |
tf |
Inductive fall time |
ICon = 3.0 A; IBon = 0.3 A |
- |
0.1 |
μs |
PINNING - TO220AB |
PIN CONFIGURATION |
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PIN |
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DESCRIPTION |
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tab |
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base |
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collector |
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tab |
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collector |
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LIMITING VALUES |
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Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) |
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SYMBOL |
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PARAMETER |
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CONDITIONS |
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MIN. |
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MAX. |
UNIT |
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VCESM |
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Collector-emitter voltage peak value |
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VBE = 0 V |
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- |
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850 |
V |
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VCEO |
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Collector-emitter voltage (open base) |
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- |
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400 |
V |
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IC |
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Collector current (DC) |
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5 |
A |
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ICM |
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Collector current peak value |
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10 |
A |
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IB |
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Base current (DC) |
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2 |
A |
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IBM |
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Base current peak value |
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Tmb ≤ 25 ˚C |
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4 |
A |
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Ptot |
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Total power dissipation |
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100 |
W |
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Tstg |
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Storage temperature |
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-65 |
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150 |
˚C |
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Tj |
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Junction temperature |
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150 |
˚C |
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THERMAL RESISTANCES |
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SYMBOL |
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PARAMETER |
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CONDITIONS |
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TYP. |
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MAX. |
UNIT |
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Rth j-mb |
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Junction to mounting base |
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- |
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1.25 |
K/W |
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Rth j-a |
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Junction to ambient |
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in free air |
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- |
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60 |
K/W |
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May 1992 |
1 |
Rev 1.000 |
Philips Semiconductors |
Product specification |
|
|
Silicon Diffused Power Transistor |
BUT211 |
|
|
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL |
PARAMETER |
CONDITIONS |
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MIN. |
TYP. |
MAX. |
UNIT |
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I |
Collector cut-off current 1 |
V = |
0 V; V |
CE |
= V |
CESMmax |
- |
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1.0 |
mA |
CES |
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BE |
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ICES |
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VBE = |
0 V; VCE = VCESMmax; |
- |
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2.0 |
mA |
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Tj = 125 ˚C |
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IEBO |
Emitter cut-off current |
VEB = |
9.0 V; IC = 0 A |
- |
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10.0 |
mA |
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VCEOsust |
Collector-emitter sustaining voltage |
IB = 0 A; IC = 100 mA; |
400 |
- |
- |
V |
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L = 25 mH |
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VCEsat |
Collector-emitter saturation voltage |
IC = 3.0 A; IB = 0.3 A |
- |
0.8 |
2.0 |
V |
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VBEsat |
Base-emitter saturation voltage |
IC = 4.0 A; IB = 0.6 A |
- |
- |
1.3 |
V |
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hFE |
DC current gain |
IC = 1.0 A; VCE = 2 |
V |
13 |
23 |
30 |
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hFE |
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IC = 4.0 A; VCE = 2 |
V |
6 |
10.5 |
- |
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hFE |
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IC = 3.0 A; VCE = 2 |
V |
10 |
13 |
- |
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DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL |
PARAMETER |
CONDITIONS |
TYP. |
MAX. |
UNIT |
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ts |
Switching times resistive load |
ICon = 3.0 |
A; IBon = 0.3 A; -IBoff = 0.6 A |
1.5 |
2.0 |
μs |
Turn-off storage time |
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tf |
Turn-off fall time |
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0.5 |
0.8 |
μs |
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Switching times inductive load |
ICon = 3.0 |
A; IBon = 0.3 A; LB = 1 μH; |
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ts |
Turn-off storage time |
-VBB = 5 V |
1.0 |
1.2 |
μs |
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tf |
Turn-off fall time |
ICon = 3.0 |
A; IBon = 0.3 A; LB = 1 μH; |
60 |
100 |
ns |
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ts |
Turn-off storage time |
-VBB = 5 V; Tj = 100 ˚C |
1.1 |
1.4 |
μs |
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tf |
Turn-off fall time |
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120 |
250 |
ns |
+ 50v 100-200R
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Horizontal |
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Oscilloscope |
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Vertical |
300R |
1R |
6V
30-60 Hz
Fig.1. Test circuit for VCEOsust.
IC / mA
250 
200 
100 
0
VCE / V |
min |
VCEOsust
Fig.2. Oscilloscope display for VCEOsust.
1 Measured with half sine-wave voltage (curve tracer).
May 1992 |
2 |
Rev 1.000 |
Philips Semiconductors |
Product specification |
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Silicon Diffused Power Transistor |
BUT211 |
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VCC |
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RL |
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VIM |
RB |
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0 |
T.U.T. |
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tp |
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T |
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Fig.3. Test circuit resistive load. VIM = -6 to +8 V |
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VCC = 250 V; tp = 20 ms; d = tp / T = 0.01. |
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RB and RL calculated from ICon and IBon requirements. |
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90 % |
ICon |
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90 % |
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IC |
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10 % |
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ts |
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ton |
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tf |
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toff |
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IB |
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IBon |
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10 % |
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tr |
30ns |
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-IBoff |
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Fig.4. Switching times waveforms with resistive load. |
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VCC |
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LC |
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IBon |
LB |
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T.U.T. |
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-VBB
Fig.5. Test circuit inductive load.
VCC = 300 V; -VBE = 5 V;LB = 1 uH
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ICon |
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90 % |
IC |
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10 % |
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ts |
tf |
t |
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toff |
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IB |
IBon |
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t |
-IBoff
Fig.6. Switching times waveforms with inductive load.
120 |
PD% |
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Normalised Power Derating |
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110 |
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100 |
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90 |
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80 |
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70 |
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60 |
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Tmb / |
C |
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Fig.7. |
Normalised power dissipation. |
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PD% = 100×PD/PD 25˚C = f (Tmb) |
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10 |
Zth / (K/W) |
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1 |
D= 0.5 |
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0.2 |
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0.1 |
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0.1 |
0.05 |
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P |
tp |
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tp |
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D = T |
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D |
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T |
t |
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0.01 |
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1E-06 |
1E-04 |
1E-02 |
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1E+00 |
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t / s |
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Fig.8. Transient thermal impedance.
Zth j-mb = f(t); parameter D = tp/T
May 1992 |
3 |
Rev 1.000 |
Philips Semiconductors |
Product specification |
|
|
Silicon Diffused Power Transistor |
BUT211 |
|
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VBEsat / V |
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1.2 |
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1.1 |
Tj = 25 C |
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Tj = 125 C |
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1 |
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0.9 |
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0.8 |
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0.7 |
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IC/IB= |
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0.6 |
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8 |
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10 |
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0.5 |
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12 |
0.4 |
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0.1 |
1 |
10 |
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IC / A |
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Fig.9. Typical base-emitter saturation voltage. |
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VBEsat = f(IC); parameter IC/IB |
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VCEsat / V |
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1 |
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0.9 |
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0.8 |
IC/IB= |
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0.7 |
12 |
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10 |
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0.6 |
8 |
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0.5 |
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0.4 |
Tj = 25 C |
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0.3 |
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Tj = 125 C |
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0.2 |
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0.1 |
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0 |
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0.1 |
1 |
10 |
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IC / A |
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Fig.10. Typical collector-emitter saturation voltage. |
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VCEsat = f(IC); parameter IC/IB |
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VBEsat / V |
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1.2 |
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Tj = 25 C |
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1.1 |
Tj = 125 C |
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1 |
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0.9 |
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0.8 |
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IC = |
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5A |
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0.7 |
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3A |
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2A |
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0.6 |
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0 |
0.4 |
0.8 |
1.2 |
1.6 |
2 |
2.4 |
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IB / A |
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VCEsat / V |
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10 |
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Tj = 25 C |
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Tj = 125 C |
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5A |
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1 |
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3A |
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IC=2A |
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0.1 |
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0.1 |
1 |
10 |
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IB / A |
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Fig.12. Typical collector-emitter saturation voltage. VCEsat = f(IB); parameter IC
h FE
100 |
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5V |
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1V |
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10 |
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Tj = 25 C |
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Tj = 125 C |
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1 |
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0.01 |
0.1 |
1 |
10 |
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IC / A |
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Fig.13. Typical DC current gain. hFE = f(IC) parameter VCE
Fig.11. Typical base-emitter saturation voltage. VBEsat = f(IB); parameter IC
May 1992 |
4 |
Rev 1.000 |
Philips Semiconductors |
Product specification |
|
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Silicon Diffused Power Transistor |
BUT211 |
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IC / A |
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100 |
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ICMmax |
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= 0.01 |
tp = |
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10 |
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10 us |
ICmax |
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100 us |
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1 |
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500 us |
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II |
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I |
2 ms |
0.1 |
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10 ms |
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DC |
0.01 |
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1 |
10 |
100 |
1000 |
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VCE / V |
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Fig.14. Forward bias safe operating area. Tmb = 25˚C
I Region of permissible DC operation.
II Extension for repetitive pulse operation. NB: Mounted with heatsink compound and
30 ± 5 newton force on the centre of the envelope.
IC / A |
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6 |
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5 |
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4 |
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3 |
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2 |
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1 |
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0 |
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0 |
200 |
400 |
600 |
800 |
1000 |
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VCE / V |
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Fig.15. Reverse bias safe operating area. Tj ≤ Tj max
VCC
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LC |
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VCL |
IBon |
LB |
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-VBB |
T.U.T. |
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Fig.16. Test circuit RBSOAR. VCC = 150 V; -VBB = 5 V LC = 200 μH; VCL ≤ 850 V; LB = 1 μH
May 1992 |
5 |
Rev 1.000 |