Материал: 9030
Philips Semiconductors |
Product Specification |
|
|
|
|
PowerMOS transistor |
BUK444-200A/B |
|
|
|
|
GENERAL DESCRIPTION |
|
QUICK REFERENCE DATA |
|
|
|
|
|
|
|
|
|||||
|
|
|
|
|
|
|
|
|
|
|
|||||
N-channel enhancement mode |
|
SYMBOL |
|
PARAMETER |
|
MAX. |
|
MAX. |
|
UNIT |
|||||
field-effect power transistor in a |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
BUK444 |
|
-200A |
|
-200B |
|
|
|
||||
plastic full-pack envelope. |
|
|
|
|
|
|
|
|
|
||||||
The device is intended for use in |
|
VDS |
|
Drain-source voltage |
|
200 |
|
|
200 |
|
|
V |
|||
Switched Mode Power Supplies |
|
ID |
|
Drain current (DC) |
|
5.3 |
|
|
4.7 |
|
|
A |
|||
(SMPS), motor control, welding, |
|
Ptot |
|
Total power dissipation |
|
25 |
|
|
25 |
|
|
W |
|||
DC/DC and AC/DC converters, and |
|
RDS(ON) |
|
Drain-source on-state |
|
0.4 |
|
|
0.5 |
|
|
Ω |
|||
in general purpose switching |
|
|
|
|
resistance |
|
|
|
|
|
|
|
|
|
|
applications. |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
PINNING - SOT186 |
|
|
PIN CONFIGURATION |
SYMBOL |
||||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
PIN |
DESCRIPTION |
|
|
|
|
|
|
|
|
|
|
d |
|
|
|
|
|
|
|
|
|
|
|
|||||
|
|
case |
||||||||||||
|
|
|
|
|
|
|
||||||||
|
|
|
|
|
||||||||||
1gate
2drain
3 |
source |
g |
|
||
case |
isolated |
s |
|
1 2 3 |
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
|||
|
|
|
|
|
|
|
|
|
VDS |
Drain-source voltage |
- |
|
- |
|
200 |
V |
|
VDGR |
Drain-gate voltage |
RGS = 20 kΩ |
- |
|
200 |
V |
||
±VGS |
Gate-source voltage |
- |
|
- |
|
30 |
V |
|
|
|
|
|
|
-200A |
|
-200B |
|
ID |
Drain current (DC) |
Ths = |
25 ˚C |
- |
5.3 |
|
4.7 |
A |
ID |
Drain current (DC) |
Ths = 100 ˚C |
- |
3.3 |
|
3.0 |
A |
|
IDM |
Drain current (pulse peak value) |
Ths = |
25 ˚C |
- |
21 |
|
19 |
A |
Ptot |
Total power dissipation |
Ths = |
25 ˚C |
- |
|
25 |
W |
|
Tstg |
Storage temperature |
- |
|
- 55 |
|
150 |
˚C |
|
Tj |
Junction Temperature |
- |
|
- |
|
150 |
˚C |
|
THERMAL RESISTANCES
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
Rth j-hs |
Thermal resistance junction to |
with heatsink compound |
- |
- |
5 |
K/W |
|
heatsink |
|
|
|
|
|
Rth j-a |
Thermal resistance junction to |
|
- |
55 |
- |
K/W |
|
ambient |
|
|
|
|
|
April 1993 |
1 |
Rev 1.100 |
Philips Semiconductors |
Product Specification |
|
|
PowerMOS transistor |
BUK444-200A/B |
|
|
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL |
PARAMETER |
CONDITIONS |
|
MIN. |
TYP. |
MAX. |
UNIT |
|
V(BR)DSS |
Drain-source breakdown |
VGS = 0 V; ID = 0.25 mA |
200 |
- |
- |
V |
||
|
voltage |
|
|
|
|
|
|
|
VGS(TO) |
Gate threshold voltage |
VDS = VGS; ID = 1 mA |
|
2.1 |
3.0 |
4.0 |
V |
|
IDSS |
Zero gate voltage drain current |
VDS = 200 |
V; VGS = 0 |
V; Tj = 25 ˚C |
- |
1 |
10 |
μA |
IDSS |
Zero gate voltage drain current |
VDS = 200 |
V; VGS = 0 |
V; Tj =125 ˚C |
- |
0.1 |
1.0 |
mA |
IGSS |
Gate source leakage current |
VGS = ±30 V; VDS = 0 |
V |
- |
10 |
100 |
nA |
|
RDS(ON) |
Drain-source on-state |
VGS = 10 V; |
BUK444-200A |
- |
0.35 |
0.4 |
Ω |
|
|
resistance |
ID = 3.5 A |
|
BUK444-200B |
- |
0.4 |
0.5 |
Ω |
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
|
|
|
|
|
|
|
gfs |
Forward transconductance |
VDS = 25 V; ID = 3.5 A |
3.5 |
5.0 |
- |
S |
Ciss |
Input capacitance |
VGS = 0 V; VDS = 25 V; f = 1 MHz |
- |
700 |
850 |
pF |
Coss |
Output capacitance |
|
- |
100 |
160 |
pF |
Crss |
Feedback capacitance |
|
- |
50 |
80 |
pF |
td on |
Turn-on delay time |
VDD = 30 V; ID = 2.9 A; |
- |
12 |
20 |
ns |
tr |
Turn-on rise time |
VGS = 10 V; RGS = 50 Ω; |
- |
45 |
70 |
ns |
td off |
Turn-off delay time |
Rgen = 50 Ω |
- |
80 |
120 |
ns |
tf |
Turn-off fall time |
|
- |
40 |
60 |
ns |
Ld |
Internal drain inductance |
Measured from drain lead 6 mm |
- |
4.5 |
- |
nH |
|
|
from package to centre of die |
|
|
|
|
Ls |
Internal source inductance |
Measured from source lead 6 mm |
- |
7.5 |
- |
nH |
|
|
from package to source bond pad |
|
|
|
|
ISOLATION
Ths = 25 ˚C unless otherwise specified
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
|
|
|
|
|
|
|
Visol |
Repetitive peak voltage from all |
R.H. ≤ 65% ; clean and dustfree |
- |
- |
1500 |
V |
|
three terminals to external |
|
|
|
|
|
|
heatsink |
|
|
|
|
|
Cisol |
Capacitance from T2 to external |
f = 1 MHz |
- |
12 |
- |
pF |
|
heatsink |
|
|
|
|
|
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
|
|
|
|
|
|
|
|
|
IDR |
Continuous reverse drain |
- |
|
- |
- |
5.3 |
A |
|
current |
|
|
|
|
|
|
IDRM |
Pulsed reverse drain current |
- |
A ; VGS = 0 V |
- |
- |
21 |
A |
VSD |
Diode forward voltage |
IF = 5.3 |
- |
1.1 |
1.3 |
V |
|
trr |
Reverse recovery time |
IF = 5.3 |
A; -dIF/dt = 100 A/μs; |
- |
150 |
- |
ns |
Qrr |
Reverse recovery charge |
VGS = 0 V; VR = 30 V |
- |
0.9 |
- |
μC |
|
April 1993 |
2 |
Rev 1.100 |
Philips Semiconductors |
Product Specification |
|
|
PowerMOS transistor |
BUK444-200A/B |
|
|
AVALANCHE LIMITING VALUE
Ths = 25 ˚C unless otherwise specified
SYMBOL |
PARAMETER |
CONDITIONS |
|
MIN. |
TYP. |
MAX. |
UNIT |
WDSS |
Drain-source non-repetitive |
ID = 9 A ; VDD £ 100 V ; |
- |
- |
50 |
mJ |
|
|
unclamped inductive turn-off |
VGS = 10 V ; RGS = 50 |
W |
|
|
|
|
|
energy |
|
|
|
|
|
|
120 |
PD% |
|
|
|
Normalised Power Derating |
|||
|
|
|
|
|
|
|
||
|
|
|
|
|
with heatsink compound |
|||
110 |
|
|
|
|
|
|||
|
|
|
|
|
|
|
|
|
100 |
|
|
|
|
|
|
|
|
90 |
|
|
|
|
|
|
|
|
80 |
|
|
|
|
|
|
|
|
70 |
|
|
|
|
|
|
|
|
60 |
|
|
|
|
|
|
|
|
50 |
|
|
|
|
|
|
|
|
40 |
|
|
|
|
|
|
|
|
30 |
|
|
|
|
|
|
|
|
20 |
|
|
|
|
|
|
|
|
10 |
|
|
|
|
|
|
|
|
0 |
0 |
20 |
40 |
60 |
80 |
100 |
120 |
140 |
|
||||||||
|
|
|
|
|
Ths / C |
|
|
|
|
Fig.1. |
|
Normalised power dissipation. |
|||||
|
PD% = 100×PD/PD 25 ˚C = f(Ths) |
|
||||||
ID% |
|
|
|
Normalised Current Derating |
||||
120 |
|
|
|
with heatsink compound |
|
|
||
110 |
|
|
|
|
|
|||
|
|
|
|
|
|
|
|
|
100 |
|
|
|
|
|
|
|
|
90 |
|
|
|
|
|
|
|
|
80 |
|
|
|
|
|
|
|
|
70 |
|
|
|
|
|
|
|
|
60 |
|
|
|
|
|
|
|
|
50 |
|
|
|
|
|
|
|
|
40 |
|
|
|
|
|
|
|
|
30 |
|
|
|
|
|
|
|
|
20 |
|
|
|
|
|
|
|
|
10 |
|
|
|
|
|
|
|
|
0 |
|
|
|
|
|
|
|
|
0 |
20 |
40 |
60 |
80 |
100 |
120 |
140 |
|
|
|
|
|
Ths / C |
|
|
|
|
Fig.2. Normalised continuous drain current. |
||||||||
ID% = 100×ID/ID 25 ˚C = f(Ths); conditions: VGS ³ |
10 V |
|||||||
ID / A |
|
|
|
|
BUK444-200A,B |
|
100 |
|
|
|
|
|
|
|
|
|
VDS/ID |
A |
tp = 10 us |
|
|
|
= |
B |
|
||
|
|
|
|
|
||
10 |
RDS(ON) |
|
|
|
|
|
|
|
|
|
|
||
|
|
|
|
100 us |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
1 ms |
|
1 |
|
|
DC |
|
10 ms |
|
|
|
|
|
|
||
|
|
|
|
|
100 ms |
|
0.1 |
|
|
|
|
|
|
1 |
|
10 |
100 |
1000 |
10000 |
|
|
|
|
|
VDS / V |
|
|
|
Fig.3. |
Safe operating area. Ths = 25 ˚C |
||||
ID & IDM = f(VDS); IDM single pulse; parameter tp |
||||||
10 |
Zth / (K/W) |
|
|
BUKx44-lv |
||
|
|
|
|
|
|
|
|
D = |
|
|
|
|
|
|
0.5 |
|
|
|
|
|
1 |
0.2 |
|
|
|
|
|
|
0.1 |
|
|
|
|
|
|
0.05 |
|
|
|
|
|
0.1 |
0.02 |
|
|
|
|
|
|
|
|
|
|
tp |
|
|
|
|
P |
tp |
D = |
|
|
|
|
D |
|
T |
|
|
0 |
|
|
|
T |
t |
0.01 |
|
|
|
|
||
|
|
|
|
|
|
|
1E-07 |
1E-05 |
1E-03 |
|
1E-01 |
1E+01 |
|
|
|
|
t / s |
|
|
|
Fig.4. Transient thermal impedance. Zth j-hs = f(t); parameter D = tp/T
April 1993 |
3 |
Rev 1.100 |
Philips Semiconductors |
Product Specification |
|
|
PowerMOS transistor |
BUK444-200A/B |
|
|
ID / A |
|
|
|
|
|
|
BUK444-200A |
||||
20 |
VGS / V = |
|
20 |
10 |
|
|
|
8 |
|||
|
|
|
|
|
|||||||
15 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
7 |
|
10 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
6 |
|
5 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
5 |
|
0 |
|
|
|
|
|
|
|
|
|
4 |
|
2 |
4 |
6 |
8 |
10 |
12 |
14 |
16 |
18 |
20 |
||
0 |
|||||||||||
|
|
|
|
|
VDS / V |
|
|
|
|
|
|
Fig.5. Typical output characteristics, Tj = 25 ˚C. ID = f(VDS); parameter VGS
RDS(ON) / Ohm |
BUK454-200A |
1.5 |
|
|
|
|
|
|
|
|
|
|
|
4.5 |
5 |
5.5 |
6 |
|
6.5 |
7 VGS / V = |
|
||
|
|
|
|
|
|
|
|
7.5 |
|
|
1.0 |
|
|
|
|
|
|
|
|
|
8 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
10 |
0.5 |
|
|
|
|
|
|
|
|
|
20 |
|
|
|
|
|
|
|
|
|
|
|
0 |
|
|
|
|
|
|
|
|
|
|
0 |
2 |
4 |
6 |
8 |
10 |
12 |
14 |
16 |
18 |
20 |
|
|
|
|
|
ID / A |
|
|
|
|
|
Fig.6. |
Typical on-state resistance, Tj = 25 ˚C. |
||||
|
RDS(ON) = f(ID); parameter VGS |
|
|||
ID / A |
|
|
BUK454-200A |
||
20 |
|
|
|
|
|
|
|
Tj / C = |
25 |
|
150 |
15 |
|
|
|
|
|
10 |
|
|
|
|
|
5 |
|
|
|
|
|
0 |
|
|
|
|
|
0 |
2 |
4 |
6 |
8 |
10 |
|
|
VGS / V |
|
|
|
Fig.7. Typical transfer characteristics.
ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj
gfs / S |
|
|
|
|
|
|
BUK454-200A |
|||
6 |
|
|
|
|
|
|
|
|
|
|
5 |
|
|
|
|
|
|
|
|
|
|
4 |
|
|
|
|
|
|
|
|
|
|
3 |
|
|
|
|
|
|
|
|
|
|
2 |
|
|
|
|
|
|
|
|
|
|
1 |
|
|
|
|
|
|
|
|
|
|
0 |
|
|
|
|
|
|
|
|
|
|
0 |
2 |
4 |
6 |
8 |
10 |
12 |
14 |
16 |
18 |
20 |
|
|
|
|
|
ID / A |
|
|
|
|
|
Fig.8. |
Typical transconductance, Tj = 25 ˚C. |
|||||
|
gfs = f(ID); conditions: VDS = 25 V |
|||||
a |
|
|
|
|
Normalised RDS(ON) = f(Tj) |
|
2.4 |
|
|
|
|
|
|
2.2 |
|
|
|
|
|
|
2.0 |
|
|
|
|
|
|
1.8 |
|
|
|
|
|
|
1.6 |
|
|
|
|
|
|
1.4 |
|
|
|
|
|
|
1.2 |
|
|
|
|
|
|
1.0 |
|
|
|
|
|
|
0.8 |
|
|
|
|
|
|
0.6 |
|
|
|
|
|
|
0.4 |
|
|
|
|
|
|
0.2 |
|
|
|
|
|
|
0 |
|
|
|
|
|
|
-60 |
-40 -20 |
0 |
20 |
40 |
60 |
80 100 120 140 |
|
|
|
|
Tj / |
C |
|
Fig.9. Normalised drain-source on-state resistance. |
||||||
a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 3.5 A; VGS = 10 V |
||||||
VGS(TO) / V |
|
|
|
|
|
|
4 |
|
|
|
max. |
|
|
|
|
|
|
|
|
|
|
|
3 |
|
|
|
typ. |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
min. |
|
|
|
2 |
|
|
|
|
|
|
|
1 |
|
|
|
|
|
|
|
0 |
|
|
|
|
|
|
|
-60 |
-40 -20 |
0 |
20 |
40 |
60 |
80 100 120 |
140 |
|
|
|
|
Tj / |
C |
|
|
|
Fig.10. |
Gate threshold voltage. |
|
||||
VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS |
|||||||
April 1993 |
4 |
Rev 1.100 |
Philips Semiconductors |
Product Specification |
|
|
PowerMOS transistor |
BUK444-200A/B |
|
|
1E-01 |
ID / A |
|
SUB-THRESHOLD CONDUCTION |
||
|
|
|
|
|
|
1E-02 |
|
|
|
|
|
1E-03 |
|
2 % |
|
typ |
98 % |
|
|
|
|
|
|
1E-04 |
|
|
|
|
|
1E-05 |
|
|
|
|
|
1E-06 |
|
|
|
|
|
|
0 |
1 |
2 |
3 |
4 |
|
|
|
VGS / V |
|
|
Fig.11. Sub-threshold drain current. |
|||||
ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS |
|||||
10000 C / pF |
|
|
|
BUK4y4-200 |
|
1000 |
|
|
|
|
Ciss |
|
|
|
|
|
|
100 |
|
|
|
|
Coss |
|
|
|
|
|
|
|
|
|
|
|
Crss |
10 |
0 |
20 |
|
|
40 |
|
VDS / V |
|
|||
|
|
|
|
|
|
Fig.12. |
Typical capacitances, Ciss, Coss, Crss. |
|||||||
C = f(VDS); conditions: VGS = 0 V; f = 1 MHz |
||||||||
12 |
VGS / V |
|
|
|
|
BUK454-200 |
||
10 |
|
|
|
|
|
VDS / V =40 |
|
|
|
|
|
|
|
|
|
|
|
8 |
|
|
|
|
|
|
160 |
|
|
|
|
|
|
|
|
|
|
6 |
|
|
|
|
|
|
|
|
4 |
|
|
|
|
|
|
|
|
2 |
|
|
|
|
|
|
|
|
0 |
0 |
4 |
8 |
12 |
16 |
20 |
24 |
28 |
|
||||||||
|
|
|
|
|
QG / nC |
|
|
|
Fig.13. Typical turn-on gate-charge characteristics. VGS = f(QG); conditions: ID = 9 A; parameter VDS
IF / A |
|
BUK454-200A |
20 |
|
|
15 |
|
|
10 |
|
|
|
Tj / C = 150 |
|
5 |
|
|
|
|
25 |
0 |
|
|
0 |
1 |
2 |
VSDS / V
Fig.14. Typical reverse diode current.
IF = f(VSDS); conditions: VGS = 0 V; parameter Tj
WDSS% |
|
|
|
|
|
|
120 |
|
|
|
|
|
|
110 |
|
|
|
|
|
|
100 |
|
|
|
|
|
|
90 |
|
|
|
|
|
|
80 |
|
|
|
|
|
|
70 |
|
|
|
|
|
|
60 |
|
|
|
|
|
|
50 |
|
|
|
|
|
|
40 |
|
|
|
|
|
|
30 |
|
|
|
|
|
|
20 |
|
|
|
|
|
|
10 |
|
|
|
|
|
|
0 |
|
|
|
|
|
|
20 |
40 |
60 |
80 |
100 |
120 |
140 |
|
|
|
Ths / |
C |
|
|
Fig.15. Normalised avalanche energy rating. |
||||||
WDSS% = f(Ths); conditions: ID = 9 A |
||||||
+ VDD
L
VDS
-
VGS
-ID/100
0 |
T.U.T. |
|
RGS
R 01 shunt
Fig.16. Avalanche energy test circuit.
WDSS = 0.5 × LID2 × BVDSS/(BVDSS - VDD)
April 1993 |
5 |
Rev 1.100 |