Материал: 9109
Philips Semiconductors |
Product specification |
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Silicon Diffused Power Transistor |
BU2506DF |
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GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL |
PARAMETER |
CONDITIONS |
TYP. |
MAX. |
UNIT |
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VCESM |
Collector-emitter voltage peak value |
VBE = 0 V |
- |
1500 |
V |
VCEO |
Collector-emitter voltage (open base) |
|
- |
700 |
V |
IC |
Collector current (DC) |
|
- |
5 |
A |
ICM |
Collector current peak value |
Ths ≤ 25 ˚C |
- |
8 |
A |
Ptot |
Total power dissipation |
- |
45 |
W |
|
VCEsat |
Collector-emitter saturation voltage |
IC = 3.0 A; IB = 1.0 A |
- |
1.0 |
V |
ICsat |
Collector saturation current |
IF = 3.0 A |
3.0 |
- |
A |
VF |
Diode forward voltage |
1.6 |
2.0 |
V |
|
tf |
Fall time |
ICM = 3.0 A; IB(end) = 0.67 A |
0.25 |
0.5 |
μs |
PINNING - SOT199 |
PIN CONFIGURATION |
SYMBOL |
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PIN |
DESCRIPTION |
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c |
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case |
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1 |
base |
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2 |
collector |
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b |
3 |
emitter |
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Rbe |
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case |
isolated |
1 2 3 |
e |
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LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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VCESM |
Collector-emitter voltage peak value |
VBE = 0 V |
- |
1500 |
V |
VCEO |
Collector-emitter voltage (open base) |
|
- |
700 |
V |
IC |
Collector current (DC) |
|
- |
5 |
A |
ICM |
Collector current peak value |
|
- |
8 |
A |
IB |
Base current (DC) |
|
- |
3 |
A |
IBM |
Base current peak value |
|
- |
5 |
A |
-IB(AV) |
Reverse base current |
average over any 20 ms period |
- |
100 |
mA |
-I |
Reverse base current peak value 1 |
|
- |
4 |
A |
BM |
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Ths ≤ 25 ˚C |
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Ptot |
Total power dissipation |
- |
45 |
W |
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Tstg |
Storage temperature |
|
-65 |
150 |
˚C |
Tj |
Junction temperature |
|
- |
150 |
˚C |
1 Turn-off current.
November 1995 |
1 |
Rev 1.100 |
Philips Semiconductors |
Product specification |
|
|
Silicon Diffused Power Transistor |
BU2506DF |
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|
THERMAL RESISTANCES
SYMBOL |
PARAMETER |
CONDITIONS |
TYP. |
MAX. |
UNIT |
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Rth j-hs |
Junction to heatsink |
without heatsink compound |
- |
3.7 |
K/W |
Rth j-hs |
Junction to heatsink |
with heatsink compound |
- |
2.8 |
K/W |
Rth j-a |
Junction to ambient |
in free air |
32 |
- |
K/W |
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
Visol |
Repetitive peak voltage from all |
R.H. ≤ 65 % ; clean and dustfree |
- |
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2500 |
V |
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three terminals to external |
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heatsink |
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Cisol |
Capacitance from T2 to external |
f = 1 MHz |
- |
22 |
- |
pF |
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heatsink |
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STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL |
PARAMETER |
CONDITIONS |
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MIN. |
TYP. |
MAX. |
UNIT |
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I |
Collector cut-off current 2 |
V = |
0 V; V |
CE |
= V |
CESMmax |
- |
- |
1.0 |
mA |
CES |
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BE |
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ICES |
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VBE = |
0 V; VCE = VCESMmax; |
- |
- |
2.0 |
mA |
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IEBO |
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Tj = 125 ˚C |
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Emitter cut-off current |
VEB = |
7.5 V; IC = 0 A |
90 |
- |
180 |
mA |
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BVEBO |
Emitter-base breakdown voltage |
IB = 600 mA |
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7.5 |
13.5 |
- |
V |
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Rbe |
Base-emitter resistance |
VEB = |
7.5 V |
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40 |
60 |
80 |
Ω |
VCEOsust |
Collector-emitter sustaining voltage |
IB = 0 A; IC = 100 mA; |
700 |
- |
- |
V |
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L = 25 mH |
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VCEsat |
Collector-emitter saturation voltage |
IC = 3.0 A; IB = 1.0 A |
- |
- |
1.0 |
V |
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VBEsat |
Base-emitter saturation voltage |
IC = 3.0 A; IB = 1.1 |
A |
- |
- |
1.3 |
V |
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hFE |
DC current gain |
IC = 0.3 A; VCE = 5 |
V |
7 |
12 |
19 |
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hFE |
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IC = 3.0 A; VCE = 5 |
V |
3.8 |
5.5 |
7.5 |
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VF |
Diode forward voltage |
IF = 3.0 A |
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- |
1.6 |
2.0 |
V |
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DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL |
PARAMETER |
CONDITIONS |
TYP. |
MAX. |
UNIT |
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Cc |
Collector capacitance |
IE = 0 A; VCB = 10 V; f = 1 MHz |
47 |
- |
pF |
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Switching times (line deflection |
ICM = 3.0 A; LC = 1.35 mH; |
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circuit) |
CFB = 9.4 nF; IB(end) = 0.67 A; |
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LB = 8 μH; -VBB = 4 V; |
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ts |
Turn-off storage time |
(-dIB/dt = 0.45 A/μs) |
4.5 |
6.0 |
μs |
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tf |
Turn-off fall time |
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0.25 |
0.5 |
μs |
2 Measured with half sine-wave voltage (curve tracer).
November 1995 |
2 |
Rev 1.100 |
Philips Semiconductors |
Product specification |
|
|
Silicon Diffused Power Transistor |
BU2506DF |
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ICM |
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TRANSISTOR |
IC |
DIODE |
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t |
IB |
IBend |
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t |
20us |
26us |
64us
VCE
t
Fig.1. Switching times waveforms.
h FE
100 |
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Tj = 25 C |
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Tj = 125 C |
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5V |
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10 |
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1V |
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1 |
0.1 |
1 |
10 |
0.01 |
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IC / A |
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Fig.4. Typical DC current gain. hFE = f (IC) parameter VCE
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ICM |
1.2 |
VBESAT / V |
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90 % |
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1.1 |
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Tj = 25 C |
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IC |
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1 |
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Tj = 125 C |
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0.9 |
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10 % |
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tf |
t |
0.8 |
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IC/IB = |
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ts |
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3 |
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IB |
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0.7 |
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4 |
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IBend |
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0.6 |
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5 |
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t |
0.5 |
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0.4 |
0.1 |
1 |
IC / A |
10 |
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- IBM |
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Fig.2. |
Switching times definitions. |
Fig.5. |
Typical base-emitter saturation voltage. |
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VBEsat = f (IC); parameter IC/IB |
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+ 150 v nominal |
1 |
VCESAT / V |
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adjust for ICM |
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0.9 |
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IC/IB = |
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5 |
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0.8 |
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4 |
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Lc |
0.7 |
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3 |
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0.6 |
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0.5 |
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Tj = 25 C |
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D.U.T. |
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0.4 |
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Tj = 125 C |
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IBend |
LB |
Cfb |
0.3 |
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0.2 |
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-VBB |
Rbe |
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0.1 |
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0 |
0.1 |
1 |
IC / A |
10 |
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Fig.3. |
Switching times test circuit. |
Fig.6. |
Typical collector-emitter saturation voltage. |
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VCEsat = f (IC); parameter IC/IB |
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November 1995 |
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|
3 |
|
|
|
Rev 1.100 |
Philips Semiconductors |
Product specification |
|
|
Silicon Diffused Power Transistor |
BU2506DF |
|
|
VBESAT / V |
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1.2 |
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Tj = 25 C |
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1.1 |
Tj = 125 C |
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1 |
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0.9 |
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IC = |
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0.8 |
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4A |
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3A |
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0.7 |
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2.5A |
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0.6 |
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0 |
1 |
2 |
3 |
IB / A |
4 |
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Fig.7. Typical base-emitter saturation voltage. VBEsat = f (IB); parameter IC
VCESAT / V |
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10 |
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IC = 2.5A |
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Tj = 25 C |
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3A |
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Tj = 125 C |
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4A |
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1 |
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0.1 |
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0.1 |
1 |
IB / A |
10 |
Fig.8. Typical collector-emitter saturation voltage. VCEsat = f (IB); parameter IC
Eoff / uJ
1000
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IC = 3A |
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100 |
2.5A |
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10 |
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0.1 |
1 |
IB / A |
10 |
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Fig.9. Typical turn-off losses. Tj = 85˚C Eoff = f (IB); parameter IC
ts, tf / us
10
9 |
ts |
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8
7
6
5
4
IC =
3 |
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3A |
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2 |
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2.5A |
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1 |
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tf |
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0 |
0.1 |
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1 |
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10 |
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IB / A |
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Fig.10. Typical collector storage and fall time. |
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ts = f (IB); tf = f (IB); parameter IC; Tj = 85˚C |
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120 |
PD% |
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Normalised Power Derating |
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with heatsink compound |
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110 |
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100 |
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90 |
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80 |
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70 |
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60 |
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50 |
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40 |
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30 |
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20 |
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10 |
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0 |
0 |
20 |
40 |
60 |
80 |
100 |
120 |
140 |
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Ths / C |
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Fig.11. |
Normalised power dissipation. |
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PD% = 100×PD/PD 25˚C = f (Ths) |
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November 1995 |
4 |
Rev 1.100 |
Philips Semiconductors |
Product specification |
|
|
Silicon Diffused Power Transistor |
BU2506DF |
|
|
IC / A |
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100 |
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= 0.01 |
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ICM max |
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10 |
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tp = |
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IC max |
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10 us |
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II |
1 |
Ptot max |
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100 us |
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1 ms |
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I |
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0.1 |
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10 ms |
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DC |
0.01 |
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1 |
10 |
100 |
1000 |
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VCE / V |
Fig.12. Forward bias safe operating area. Ths = 25˚C I Region of permissible DC operation.
II Extension for repetitive pulse operation.
NB: Mounted with heatsink compound and 30 ± 5 newton force on the centre of the envelope.
IC / A |
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100 |
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= 0.01 |
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ICM max |
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tp = |
10 |
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IC max |
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10 us |
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II |
1 |
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Ptot max |
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100 us |
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1 ms |
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I |
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0.1 |
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10 ms |
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DC |
0.01 |
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1 |
10 |
100 |
1000 |
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VCE / V |
Fig.13. Forward bias safe operating area. Ths = 25˚C I Region of permissible DC operation.
II Extension for repetitive pulse operation.
NB: Mounted without heatsink compound and 30 ± 5 newton force on the centre of
the envelope.
November 1995 |
5 |
Rev 1.100 |
Смотрите также:
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| 1444 |
| 1532 |
| 1564 |
| 1804 |
| 1sma5-0at3rev1 |
| 2 Общ фарм + |
| 2270 |
| 2409 |
| 2737 |