Материал: 9815
DISCRETE SEMICONDUCTORS
handbook, 2 columns
M3D118
BY428
Damper diode
Product specification |
1996 May 24 |
Supersedes data of April 1992
File under Discrete Semiconductors, SC01
Philips Semiconductors |
Product specification |
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Damper diode |
BY428 |
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FEATURES
∙Glass passivated
∙High maximum operating temperature
∙Low leakage current
∙Excellent stability
∙Available in ammo-pack
∙Also available with preformed leads for easy insertion.
APPLICATIONS
∙Damper diode in high frequency horizontal deflection circuits up to 64 kHz.
DESCRIPTION |
This package is hermetically sealed |
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Rugged glass package, using a high |
and fatigue free as coefficients of |
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expansion of all used parts are |
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temperature alloyed construction. |
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matched. |
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k |
a |
2/3 page (Datasheet) |
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MAM104
Fig.1 Simplified outline (SOD64) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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VRSM |
non-repetitive peak reverse voltage |
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1500 |
V |
VRRM |
repetitive peak reverse voltage |
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1500 |
V |
VR |
continuous reverse voltage |
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1400 |
V |
IFWM |
working peak forward current |
Ttp = 80 °C; lead length = 10 mm; |
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4 |
A |
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see Fig.2 |
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IFRM |
repetitive peak forward current |
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8 |
A |
IFSM |
non-repetitive peak forward current |
t = 10 ms half sinewave; |
− |
50 |
A |
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Tj = Tj max prior to surge; |
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VR = VRRMmax |
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Tstg |
storage temperature |
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−65 |
+175 |
°C |
Tj |
junction temperature |
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−65 |
+150 |
°C |
ELECTRICAL CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL |
PARAMETER |
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CONDITIONS |
MAX. |
UNIT |
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VF |
forward voltage |
IF = 4 |
A; Tj = Tj max; see Fig.3 |
1.60 |
V |
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IF = 4 |
A; see Fig.3 |
1.95 |
V |
IR |
reverse current |
VR = VRRMmax; Tj = 150 °C |
150 |
μA |
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trr |
reverse recovery time |
when switched from IF = 0.5 A to IR = 1 A; |
250 |
ns |
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measured at IR = 0.25 A; see Fig.6 |
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tfr |
forward recovery time |
when switched to IF = 5 A in 50 ns; |
250 |
ns |
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Tj = Tj max; see Fig.7 |
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1996 May 24 |
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Philips Semiconductors |
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Product specification |
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Damper diode |
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BY428 |
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THERMAL CHARACTERISTICS |
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SYMBOL |
PARAMETER |
CONDITIONS |
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VALUE |
UNIT |
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Rth j-tp |
thermal resistance from junction to tie-point |
lead length = 10 mm |
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25 |
K/W |
Rth j-a |
thermal resistance from junction to ambient |
note 1 |
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75 |
K/W |
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mounted as shown in Fig.5 |
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40 |
K/W |
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Note
1.Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ³40 mm, see Fig.4. For more information please refer to the “General Part of Handbook SC01”.
1996 May 24 |
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Philips Semiconductors |
Product specification |
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Damper diode |
BY428 |
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GRAPHICAL DATA
MBH409
4 handbook, halfpage
Ptot
(W)
3
2
1
0
0 |
1 |
2 |
3 |
4 |
5 |
6 |
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IFWM (A) |
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Solid line: basic high-voltage E/W modulator circuit; see Fig.8. Dotted line: basic conventional horizontal deflection circuit; see Fig.9. Curves include power dissipation due to switching losses.
Fig.2 Maximum total power dissipation as a function of working peak forward current.
MBH410
8 handbook, halfpage
IF
(A)
6
4
2
0
0 |
1 |
2 |
VF (V) |
3 |
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Dotted line: Tj = 150 °C.
Solid line: Tj = 25 °C.
Fig.3 Forward current as a function of forward voltage; maximum values.
50
handbook, halfpage
25
7 
50
2
3
MGA200
Dimensions in mm.
Fig.4 Device mounted on a printed-circuit board.
handbook, halfpage |
35 |
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10 |
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3 cm2 |
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3 cm2 |
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copper |
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copper |
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30 |
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10 |
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MGA204 |
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25.4 |
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Dimensions in mm. |
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Fig.5 |
Mounting with additional printed circuit board |
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for heat sink purposes. |
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1996 May 24 |
4 |
Philips Semiconductors |
Product specification |
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Damper diode |
BY428 |
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handbook, full pagewidth |
DUT |
IF |
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(A) |
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0.5 |
t rr |
10 Ω |
25 V |
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1 Ω |
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50 Ω |
0 |
t |
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0.25 |
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0.5 |
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IR |
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(A) |
MAM057 |
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1 |
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Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns.
Source impedance: 50 Ω; tr ≤ 15 ns.
Fig.6 Test circuit and reverse recovery time waveform and definition.
MGD600
handbook, halfpage
VF
90% 100%
t
t fr
IF
10%
t
Fig.7 Forward recovery time definition.
1996 May 24 |
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