Материал: BSP450
MiniPROFET
∙High-side switch
∙Short-circuit protection
∙Input protection
∙Overtemperature protection with hysteresis
∙Overload protection
∙Overvoltage protection
∙Switching inductive load
∙Clamp of negative output voltage with inductive loads
∙Undervoltage shutdown
∙Maximum current internally limited
∙Electrostatic discharge (ESD) protection
∙Reverse battery protection1)
Package: SOT 223
Type |
Ordering code |
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BSP 450 |
Q67000-S266 |
Mini PROFET® BSP 450
4
3
2
1
Pins
1 |
2 |
3 |
4 |
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OUT |
GND |
IN |
Vbb |
Maximum Ratings
Parameter |
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Symbol |
Values |
Unit |
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Supply voltage range |
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Vbb |
-0.3...48 |
V |
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Load current |
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self-limited |
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IL |
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IL(SC) |
A |
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Maximum input voltage2) |
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VIN |
-5.0...Vbb |
V |
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Maximum input current |
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IIN |
±5 |
mA |
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Inductive load switch-off energy dissipation |
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EAS |
0.5 |
J |
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single pulse |
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IL |
= 0.5A , TA |
= 85°C |
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Operating temperature range |
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Tj |
-40 ...+125 |
°C |
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Storage temperature range |
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Tstg |
-55 ...+150 |
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Max. power dissipation (DC)3) |
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T |
= 25 °C |
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P |
tot |
1.4 |
W |
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A |
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Electrostatic discharge capability (ESD)4) |
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VESD |
±1 |
kV |
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Thermal resistance |
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chip - soldering point: |
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RthJS |
7 |
K/W |
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chip - ambient3) |
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R |
70 |
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thJA |
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+ Vbb 4 |
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Voltage |
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Overvoltage |
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Current |
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Gate |
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source |
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protection |
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limit |
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protection |
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ESD- |
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V Logic |
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Diode |
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OUT |
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Voltage |
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Charge pump |
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Limit for |
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sensor |
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Level shifter |
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unclamped |
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Temperature |
1 |
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ind. loads |
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3 |
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IN |
Rin |
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Rectifier |
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sensor |
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Load |
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ESD |
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Logic |
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2 |
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GND |
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MINI-PROFET |
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Signal GND |
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Load GND |
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1)With resistor RGND=150 Ω in GND connection, resistor in series with IN connections reverse load current limited by connected load.
2)At VIN > Vbb, the input current is not allowed to exceed ±5 mA.
3)BSP 450 on epoxy pcb 40 mm x 40 mm x 1.5 mm with 6 cm2 copper area for Vbb connection
4)HBM according to MIL-STD 883D, Methode 3015.7
Semiconductor Group |
1 |
06.96 |
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BSP 450 |
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Electrical Characteristics |
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Parameter and Conditions |
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Symbol |
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Values |
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Unit |
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at Tj = 25 °C, Vbb = 24V unless otherwise specified |
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min |
typ |
max |
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Load Switching Capabilities and Characteristics |
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On-state resistance (pin 4 to 1) |
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IL = 0.5 A, Vin = high |
Tj = 25°C |
RON |
-- |
0.16 |
0.2 |
Ω |
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Tj = 125°C |
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-- |
-- |
0.38 |
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Nominal load current (pin 4 to 1)5) |
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IL(ISO) |
1.7 |
-- |
-- |
A |
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ISO Standard: VON = Vbb - VOUT |
= 0.5 V |
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TS = 85 °C |
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Turn-on time |
to 90% VOUT |
ton |
-- |
60 |
100 |
μs |
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Turn-off time |
to 10% VOUT |
toff |
-- |
90 |
150 |
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RL = 47 Ω |
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Slew rate on |
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dV /dton |
-- |
2 |
4 |
V/μs |
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10 to 30% VOUT, RL = 47 Ω |
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Slew rate off |
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-dV/dtoff |
-- |
2 |
4 |
V/μs |
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70 to 40% VOUT, RL = 47 Ω |
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Input
Allowable input voltage range, (pin 3 to 2) |
VIN |
-3.0 |
-- |
Vbb |
V |
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Input turn-on threshold voltage |
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VIN(T+) |
-- |
-- |
3.0 |
V |
Vbb = 18...30V |
Tj = -25...+125°C |
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Input turn-off threshold voltage |
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VIN(T-) |
1.82 |
-- |
-- |
V |
Vbb = 18...30V |
Tj = -25...+125°C |
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Input threshold hysteresis |
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VIN(T) |
-- |
0.1 |
-- |
V |
Off state input current (pin 3) |
VIN(off) = 1.82 V |
IIN(off) |
20 |
-- |
-- |
μA |
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Tj = -25...+125°C |
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On state input current (pin 3) |
VIN(on) = 3.0 V to Vbb |
IIN(on) |
-- |
-- |
110 |
μA |
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Tj = -25...+125°C |
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Input resistance |
Tj = -25...+125°C |
RIN |
1.5 |
2.8 |
3.5 |
kΩ |
5) IL(ISO) characterizes the MOSFET part of the device and may be higher than the shortcircuit current IL(SC) of the whole device
Semiconductor Group |
2 |
BSP 450
Parameter and Conditions |
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Symbol |
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Values |
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Unit |
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at Tj = 25 °C, Vbb = 24V unless otherwise specified |
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min |
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typ |
max |
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Operating Parameters |
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Operating voltage |
Tj =-25...+125°C |
Vbb(on) |
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12 |
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-- |
40 |
V |
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Undervoltage shutdown |
Tj =-25...+125°C |
Vbb(under) |
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7 |
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-- |
10.5 |
V |
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Undervoltage restart |
Tj =-25...+125°C: |
Vbb(u rst) |
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-- |
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-- |
11 |
V |
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Undervoltage hysteresis |
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DVbb(under) |
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-- |
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0.4 |
-- |
V |
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Standby current (pin 4), Vin = low Tj =-25...+100°C |
Ibb(off) |
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-- |
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10 |
25 |
mA |
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T =125°C 6) |
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50 |
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j |
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Operating current (pin 2), Vin = high |
IGND |
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-- |
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1 |
1.6 |
mA |
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Tj =-25...+125°C |
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leakage current (pin 1) Vin = low |
Tj =-25...+125°C |
IL(off) |
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-- |
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-- |
2 |
mA |
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Protection Functions |
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Current limit (pin 4 to 1) |
Tj = 25°C |
IL(SC) |
0.7 |
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1.5 |
2 |
A |
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Tj = -25...+125°C |
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0.7 |
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-- |
2.4 |
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Overvoltage protection Ibb=4mA |
Tj =-25...+125°C |
Vbb(AZ) |
48 |
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-- |
-- |
V |
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Output clamp (ind. load switch off) |
VON(CL) |
-- |
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72 |
-- |
V |
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at VOUT = Vbb - VON(CL), Ibb = 4mA |
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Thermal overload trip temperature |
Tjt |
135 |
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150 |
-- |
°C |
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Thermal hysteresis |
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Tjt |
-- |
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10 |
-- |
K |
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Inductive load switch-off energy dissipation7) |
EAS |
-- |
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-- |
0.5 |
J |
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Tj Start = 85 °C, single pulse, IL = 0.5 A, Vbb = 12 V |
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Reverse Battery |
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Reverse battery voltage8) |
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-Vbb |
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30 |
V |
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Continious reverse drain current |
TA = 25°C |
-IS |
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-- |
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-- |
1 |
A |
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Drain-Source diode voltage |
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-VON |
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-- |
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-- |
1.2 |
V |
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IF = 1 A, Vin = low |
VOUT>Vbb |
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6)increase of standby current at Tj = 125°C caused by temperature sense current
7)while demagnetizing load inductance, dissipated energy is EAS= ò(VON(CL) * iL(t) dt,
1 |
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2 |
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VON(CL) |
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approx. EAS= / |
2 |
* L * I |
L |
* ( |
VON(CL)-Vbb |
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8) Requires 150 Ω resistor in GND connection. Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load.
Semiconductor Group |
3 |
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BSP 450 |
Max allowable power dissipation |
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Current limit characteristic |
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Ptot = f (TA,TSP) |
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IL(SC) = f (Von) (Von see testcircuit) |
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Ptot [W] |
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IL(SC) [A] |
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1 6 |
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3.5 |
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1 4 |
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3 |
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1 2 |
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2.5 |
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1 0 |
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TS P |
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2 |
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8 |
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125°C |
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1.5 |
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25° C |
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6 |
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-25°C |
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4 |
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1 |
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2 |
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TA |
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0.5 |
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0 |
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0 |
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0 |
2 5 |
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5 0 |
7 5 |
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1 0 0 |
1 2 5 |
0 |
5 |
10 |
15 |
20 |
25 |
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TA, TSP[°C] |
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Von [V] |
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On state resistance (Vbb-pin to OUT pin) |
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Typ. input current |
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RON = f (Tj);Vbb = 24 V;IL = 0.5 A |
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IIN = f(VIN); Vbb = 24 V |
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RON [Ω] |
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IIN [μA] |
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0.4 |
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90 |
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0.35 |
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80 |
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-25°C |
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0.3 |
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70 |
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25°C |
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0.25 |
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60 |
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125°C |
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98% |
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50 |
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0.2 |
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40 |
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0.15 |
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30 |
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0.1 |
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20 |
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0.05 |
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10 |
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0 |
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0 |
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-50 |
-25 |
0 |
25 |
50 |
75 |
100 |
125 |
0 |
5 |
10 |
15 |
20 |
25 |
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Tj [°C] |
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VIN [V] |
Semiconductor Group |
4 |
BSP 450
Typ. overload current |
Typ. operating current |
IL(lim) = f (t), Vbb=24V, no heatsink, Param.:Tjstart |
IGND = f (Tj), Vbb=30V, VIN=high |
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IL(lim) [A] |
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GND [mA] |
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1.6 |
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1 |
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1.4 |
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1.2 |
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0.8 |
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1 |
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0.6 |
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0.8 |
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0.6 |
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125°C |
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-25°C |
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0.4 |
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0.4 |
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0.2 |
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0.2 |
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0 |
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0 |
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-20 |
0 |
20 |
40 |
60 |
80 |
100 |
-25 |
0 |
25 |
50 |
75 |
100 |
125 |
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t [ms] |
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Tj [°C] |
Short circuit current |
Typ. standby current |
IL(SC) = f (Tj);Vbb = 30 V; |
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Ibb(off) = f(Tj); Vbb = 30 V, VIN = low |
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IL(SC) [Α] |
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Ibb(off) [μA] |
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1.6 |
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7 |
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1.4 |
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6 |
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1.2 |
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5 |
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1 |
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4 |
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0.8 |
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3 |
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0.6 |
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0.4 |
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2 |
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0.2 |
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1 |
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0 |
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0 |
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-25 |
0 |
25 |
50 |
75 |
100 |
125 |
-25 |
0 |
25 |
50 |
75 |
100 |
125 |
150 |
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Tj [°C] |
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Tj [°C] |
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Semiconductor Group |
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5 |
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