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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MJE5850/D

		MJE5850
Designer's Data	Sheet	MJE5851*
Designer's Data	Sheet	MJE5852*
SWITCHMODE	Series	MJE5852*
SWITCHMODE	Series

PNP Silicon Power Transistors

The MJE5850, MJE5851 and the MJE5852 transistors are designed for high±voltage, high±speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switchmode applications such as:

• Switching Regulators

• Inverters

•Solenoid and Relay Drivers

•Motor Controls

•Deflection Circuits

Fast Turn±Off Times

100 ns Inductive Fall Time @ 25_C (Typ)

125 ns Inductive Crossover Time @ 25°C (Typ) Operating Temperature Range ±65 to +150_C

100_C Performance Specified for:

Reversed Biased SOA with Inductive Loads

Switching Times with Inductive Loads

Saturation Voltages

Leakage Currents

MAXIMUM RATINGS

*Motorola Preferred Device

8 AMPERE

PNP SILICON

POWER TRANSISTORS 300, 350, 400 VOLTS 80 WATTS

CASE 221A±06

TO±220AB

Rating	Symbol	MJE5850	MJE5851	MJE5852	Unit

Collector±Emitter Voltage	VCEO(sus)	300	350	400	Vdc
Collector±Emitter Voltage	VCEV	350	400	450	Vdc
Emitter Base Voltage	VEB		6.0		Vdc
Collector Current Ð Continuous	IC		8.0		Adc
Peak (1)	ICM		1 6
Base Current Ð Continuous	IB		4.0		Adc
Peak (1)	IBM		8.0
Total Power Dissipation	PD		80		Watts
@ TC = 25_C
Derate above 25_C			0.640		_
			0.640		W/ C
Operating and Storage Junction	TJ, Tstg		± 65 to 150		_C
Temperature Range

THERMAL CHARACTERISTICS

Characteristic	Symbol	Max	Unit

Thermal Resistance, Junction to Case	RqJC	1.25	_C/W
Maximum Lead Temperature for Soldering	TL	275	_C
Purposes: 1/8″ from Case for 5 Seconds

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%.

Designer's Data for ªWorst Caseº Conditions Ð The Designer 's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves Ð representing boundaries on device characteristics Ð are given to facilitate ªworst caseº design.

Preferred devices are Motorola recommended choices for future use and best overall value.

Designer's and SWITCHMODE are trademarks of Motorola, Inc.

Motorola, Inc. 1995

MJE5850

MJE5851

MJE5852

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector±Emitter Sustaining Voltage

MJE5850

VCEO(sus)

300

Vdc

(IC = 10 mA, IB = 0)

MJE5851

350

MJE5852

400

Collector Cutoff Current

ICEV

mAdc

(VCEV = Rated Value, VBE(off) = 1.5 Vdc)

0.5

(VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 100_C)

2.5

Collector Cutoff Current

ICER

3.0

mAdc

(VCE = Rated VCEV, RBE = 50 Ω, TC = 100_C)

Emitter Cutoff Current

IEBO

1.0

mAdc

(VEB = 6.0 Vdc, IC = 0)

SECOND BREAKDOWN

Second Breakdown Collector Current with base forward biased

IS/b

See Figure 12

Clamped Inductive SOA with base reverse biased

RBSOA

See Figure 13

*ON CHARACTERISTICS

DC Current Gain

hFE

(IC = 2.0 Adc, VCE = 5 Vdc)

(IC = 5.0 Adc, VCE = 5 Vdc)

Collector±Emitter Saturation Voltage

VCE(sat)

Vdc

(IC = 4.0 Adc, IB = 1.0 Adc)

2.0

(IC = 8.0 Adc, IB = 3.0 Adc)

5.0

(IC = 4.0 Adc, IB = 1.0 Adc, TC = 100_C)

2.5

Base±Emitter Saturation Voltage

VBE(sat)

Vdc

(IC = 4.0 Adc, IB = 1.0 Adc)

1.5

(IC = 4.0 Adc, IB = 1.0 Adc, TC = 100_C)

1.5

DYNAMIC CHARACTERISTICS

Output Capacitance

Cob

270

(VCB = 10 Vdc, IE = 0, ftest = 1.0 kHz)

SWITCHING CHARACTERISTICS

Resistive Load (Table 1)

Delay Time

(VCC = 250 Vdc, IC = 4.0 A, IB1 = 1.0 A,

0.025

0.1

μs

Rise Time

tp = 50 μs, Duty Cycle v 2%)

0.100

0.5

μs

Storage Time

= 250 Vdc, I

= 4.0 A, I = 1.0 A,

0.60

2.0

μs

Fall Time

VBE(off) = 5 Vdc, tp = 50 μs, Duty Cycle v 2%)

0.11

0.5

μs

Inductive Load, Clamped (Table 1)

Storage Time

(ICM = 4 A, VCEM = 250 V, IB1 = 1.0 A,

tsv

0.8

3.0

μs

Crossover Time

0.4

1.5

μs

= 5 Vdc, T

= 100_C)

BE(off)

Fall Time

tfi

0.1

μs

Storage Time

(ICM = 4 A, VCEM = 250 V, IB1 = 1.0 A,

tsv

0.5

μs

Crossover Time

0.125

μs

= 5 Vdc, T

= 25_C)

BE(off)

Fall Time

tfi

0.1

μs

* Pulse Test: PW = 300 μs. Duty Cycle v 2%

2	Motorola Bipolar Power Transistor Device Data

MJE5850 MJE5851 MJE5852

TYPICAL ELECTRICAL CHARACTERISTICS

	200											(VOLTS)	2.0
	100	TJ = 150°C										(VOLTS)
	100	TJ = 150°C										VOLTAGE	1.6
CURRENT GAIN	70												1.6
	70
	50	TJ = 25°C											IC = 0.25 A
	30												1.2		1.0 A		2.5 A		5.0 A
	20
				VCE = 5 V									0.8								°
, DC				VCE = 5 V								COLLECTOR±EMITTER	0.8								°
, DC	10																			TJ = 25 C
FE	7.0
h	7.0
	5.0												0.4
	3.0
												,
												CE
	2.0											CE	0
	2.0											V	0						1.0	2.0	5.0
	0.1	0.2	0.3	0.5	0.7	1.0	2.0	3.0	5.0	7.0	10		0.01	0.02	0.05	0.1	0.2	0.5	1.0	2.0	5.0	10
			IC, COLLECTOR CURRENT (AMPS)													IB, BASE CURRENT (AMPS)

Figure 1. DC Current Gain

Figure 2. Collector Saturation Region

(VOLTS)	2.0
(VOLTS)
VOLTAGE	1.6
		IC/IB = 4
	1.2
,COLLECTOR±EMITTER	1.2
	0.8							TJ = 150°C
	0.4
									TJ = 25°C
CE	0								TJ = 25°C
V	0				0.7
	0.1	0.2	0.3	0.5	0.7	1.0	2.0	3.0	5.0	7.0	10
			IC, COLLECTOR CURRENT (AMPS)

Figure 3. Collector±Emitter Saturation Voltage

	2.0
	1.6		IC/IB = 4
(VOLTS)	1.2
(VOLTS)
V, VOLTAGE	0.8	TJ = 25°C
V, VOLTAGE
	0.4	TJ = 150°C
		TJ = 150°C
	0
	0.1	0.2	0.3	0.5	0.7	1.0	2.0	3.0	5.0	7.0	10
			IC, COLLECTOR CURRENT (AMPS)

Figure 4. Base±Emitter Voltage

	105									3000
										2000
(nA)	104									1000						Cib			TJ = 25°C
, COLLECTOR CURRENT	TJ = 150°C								C, CAPACITANCE (pF)	1000						Cib
	TJ = 150°C
	103									500
	102	100°C								200						Cob
	102									200
	1	REVERSE		FORWARD			VCE = 200 V			100
C	1	REVERSE		FORWARD
I	10
		25°C								50
	100	25°C
	100	+ 0.1	0	± 0.1	± 0.2	± 0.3	± 0.4	± 0.5		30	0.2	0.5	1.0	5.0	10	20	50	100	200 500	1000
	+ 0.2	+ 0.1	0	± 0.1	± 0.2	± 0.3	± 0.4	± 0.5		0.1	0.2	0.5	1.0	5.0	10	20	50	100	200 500	1000
			VBE, BASE±EMITTER VOLTAGE (VOLTS)										VR, REVERSE VOLTAGE (VOLTS)

Figure 5. Collector Cutoff Region

Figure 6. Capacitance

Motorola Bipolar Power Transistor Device Data

MJE5850

MJE5851

MJE5852

Table 1. Test Conditions for Dynamic Performance

VCEO(sus)

RBSOA AND INDUCTIVE SWITCHING

RESISTIVE SWITCHING

+ V

50 μF

0.0025 μF

0.2

0.1 μF

TURN±ON TIME

±10 V

500 Ω

MJE15029

1/2 W

INPUT

CONDITIONS

+ V

500 Ω

1N4934

IB1

1/2 W

0.1 μF

INPUT

0.0033 μF

1/2 W

1 Ω 2 W

obtain the forced

PW Varied to Attain

500 Ω

hFE desired

IC = 100 mA

50 Ω

MJE15028

TURN±OFF TIME

2 W

1/2 W

0.2 μF

0.1 μF

Use inductive switching

driver as the input to

the resistive test circuit.

± V adjusted to obtain desired IB1

50 μF

CIRCUIT

VALUES

+ V adjusted to obtain desired VBE(off)

± V

VCC = 20 V

Pulse Width = 10 μs

Lcoil = 80 mH, VCC = 10 V

Lcoil = 180

μH

Vclamp = 250 V

VCC = 250 V

Rcoil = 0.7 Ω

Rcoil = 0.05 Ω

RB adjusted to attain desired IB1

RL = 62 Ω

INDUCTIVE TEST CIRCUIT

OUTPUT WAVEFORMS

RESISTIVE TEST CIRCUIT

CIRCUITS

t1 Adjusted to

VCC

TUT

Obtain IC

1N4937

Rcoil

ICM

tf Clamped

coil

)

TUT

t1 ≈

TEST

INPUT

EQUIVALENT

coil

Lcoil (ICM)

SEE ABOVE FOR

Vclamp

t2 ≈

VCC

DETAILED CONDITIONS

VCC

VClamp

VCEM

RS =

clamp

Test Equipment

0.1 Ω

TIME

Scope Ð Tektronix

475 or Equivalent

1.0

3.0

tc 100°C

IC = 4 A

2.7

TIMECROSSOVER(μs)

0.8

IC/IB = 4

2.4

TJ = 25°C

STORAGEVOLTAGE,

2.1

10%

10% 2%

90% I

0.6

tsv 100°C

1.8

VCEM

tfi

ICM ICM

tsv 25 C

VCE

1.5

tsr

trv

tti

0.4

1.2

0.9

TIME

0.2

0.6

90%

ICM

25 C

s)μ(

Vclamp

0.3

ICM

VCEM

TIME

VBE, BASE±EMITTER VOLTAGE (VOLTS)

Figure 7. Inductive Switching Measurements

Figure 8. Inductive Switching Times

4	Motorola Bipolar Power Transistor Device Data

MJE5850 MJE5851 MJE5852

SWITCHING TIMES NOTE

In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and voltage waveforms since they are in phase. However, for inductive loads which are common to SWITCHMODE power supplies and hammer drivers, current and voltage waveforms are not in phase. Therefore, separate measurements must be made on each waveform to determine the total switching time. For this reason, the following new terms have been defined.

tsv = Voltage Storage Time, 90% IB1 to 10% VCEM trv = Voltage Rise Time, 10±90% VCEM

tfi = Current Fall Time, 90±10% ICM tti = Current Tail, 10±2% ICM

tc = Crossover Time,10% VCEM to 10% ICM

An enlarged portion of the inductive switching waveform is

shown in Figure 7 to aid on the visual identity of these terms. For the designer, there is minimal switching loss during storage time and the predominant switching power losses occur during the crossover interval and can be obtained us-

ing the standard equation from AN±222A:

PSWT = 1/2 VCCIC(tc)f

In general, trv + tfi ] tc. However, at lower test currents this relationship may not be valid.

As is common with most switching transistors, resistive switching is specified at 25°C and has become a benchmark for designers. However, for designers of high frequency converter circuits, the user oriented specifications which make this a ªSWITCHMODEº transistor are the inductive switching speeds (tc and tsv) which are guaranteed at 100_C.

	1.0
	0.7							VCC = 250 V
	0.5							VCC = 250 V
	0.5							IC/IB = 4
								IC/IB = 4
	0.3							TJ = 25°C
( μs)	0.2
( μs)	0.1						tr
TIME	0.1
TIME	0.07
t,	0.05
	0.05
	0.03
	0.02							td
	0.01
	0.1	0.2	0.3	0.5	0.7	1.0	2.0	3.0	5.0	7.0	10

IC, COLLECTOR CURRENT (AMPS)

Figure 9. Turn±On Switching Times

	10
	0.7
						ts
μs)	0.4
μs)
(
t, TIME	0.3					VCC = 250 V
t, TIME						IC/IB = 4
	0.2					VBE(off) = 5 V
	0.2					TJ = 25°C
						TJ = 25°C
						tf
	0.1
	0.1	0.3	0.5	0.7	1.0	2.0	4.0	7.0	10
		IC, COLLECTOR CURRENT (AMPS)

Figure 10. Turn±Off Switching Time

		1
TRANSIENT THERMAL RESISTANCE		0.7	D = 0.5
		0.5	D = 0.5
		0.5
		0.3	0.2
	(NORMALIZED)	0.2	0.2
		0.2
		0.1	0.1							ZθJC(t) = r(t) RθJC				P(pk)
		0.1								ZθJC(t) = r(t) RθJC				P(pk)
		0.07	0.05							RθJC = 1.25°C/W MAX
		0.05								D CURVES APPLY FOR POWER
		0.05	0.02							PULSE TRAIN SHOWN					t1
		0.03	0.02							PULSE TRAIN SHOWN					t1
		0.03								READ TIME AT t1					t2
		0.02			0.01					TJ(pk) ± TC = P(pk) ZθJC(t)
r(t),		0.02			0.01					TJ(pk) ± TC = P(pk) ZθJC(t)				DUTY CYCLE, D = t1/t2
		0.01		SINGLE PULSE
		0.01
		0.01	0.02	0.05	0.1	0.2	0.5	1	2	5	10	20	50	100	200	500	1 k

t, TIME (ms)

Figure 11. Typical Thermal Response [ZθJC(t)]

Motorola Bipolar Power Transistor Device Data

Источник: https://studfile.net/preview/16503940/

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