Материал: mcr8dsmrev0
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MCR8DSM/D
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control.
• Small Size |
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• Passivated Die for Reliability and Uniformity |
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• Low Level Triggering and Holding Characteristics |
A |
• Available in Two Package Styles |
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Surface Mount Lead Form Ð Case 369A |
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Miniature Plastic Package Ð Straight Leads Ð Case 369 |
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ORDERING INFORMATION |
G |
• To Obtain ªDPAKº in Surface Mount Leadform (Case 369A) |
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Shipped in Sleeves Ð No Suffix, i.e. MCR8DSN |
K |
Shipped in 16 mm Tape and Reel Ð Add ªT4º Suffix to Device Number, |
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i.e. MCR8DSNT4 |
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• To Obtain ªDPAKº in Straight Lead Version (Case 369) Shipped in Sleeves Ð Add ª±1º Suffix to Device Number, i.e. MCR8DSN±1
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
MCR8DSM
MCR8DSN
Motorola Preferred Devices
SCRs
8.0 AMPERES RMS
600 thru 800 VOLTS
A
K 
A G
CASE 369A±13
STYLE 4
Rating |
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Symbol |
Value |
Unit |
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Peak Repetitive Off±State Voltage (1) |
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V |
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Volts |
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DRM |
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Peak Repetitive Reverse Voltage |
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VRRM |
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(TJ = ±40 to 110°C, RGK = 1.0 KW) |
MCR8DSM |
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600 |
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MCR8DSN |
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800 |
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On±State RMS Current |
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IT(RMS) |
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Amps |
(All Conduction Angles; TC = 90°C) |
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8.0 |
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Average On±State Current (All Conduction Angles; TC = 90°C) |
IT(AV) |
5.1 |
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Peak Non±Repetitive Surge Current |
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ITSM |
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(One Half Cycle, 60 Hz, TJ = 110°C) |
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90 |
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Circuit Fusing Consideration (t = 8.3 msec) |
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I2t |
34 |
A2sec |
Peak Gate Power |
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PGM |
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Watts |
(Pulse Width ≤ 10 msec, TC = 90°C) |
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5.0 |
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Average Gate Power |
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PG(AV) |
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(t = 8.3 msec, TC = 90°C) |
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0.5 |
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Peak Gate Current (Pulse Width ≤ 10 sec,m |
TC = 90°C) |
IGM |
2.0 |
Amps |
Operating Junction Temperature Range |
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TJ |
±40 to 110 |
°C |
Storage Temperature Range |
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Tstg |
±40 to 150 |
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THERMAL CHARACTERISTICS |
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Characteristic |
Symbol |
Max |
Unit |
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Thermal Resistance Ð Junction to Case |
RqJC |
2.2 |
°C/W |
Ð Junction to Ambient |
RqJA |
88 |
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Ð Junction to Ambient (2) |
RqJA |
80 |
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Maximum Lead Temperature for Soldering Purposes (3) |
T |
260 |
°C |
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L |
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(1)VDRM for all types can be applied on a continuous basis. Ratings apply for negative gate voltage or RGK = 1.0 KW; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the device are exceeded.
(2)Surface mounted on minimum recommended pad size.
(3)1/8″ from case for 10 seconds.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Thyristor Device Data
Motorola, Inc. 1997
MCR8DSM |
MCR8DSN |
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ELECTRICAL CHARACTERISTICS (TJ = 25°C; RGK = 1.0 KW unless otherwise noted) |
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Characteristics |
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Symbol |
Min |
Typ |
Max |
Unit |
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Peak Reverse Gate Blocking Voltage |
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VGRM |
10 |
12.5 |
18 |
Volts |
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(IGR = 10 mA) |
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Peak Forward Blocking Current |
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IDRM |
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mA |
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Peak Reverse Blocking Current |
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IRRM |
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(V = Rated V |
or V |
) (1) |
T = 25°C |
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Ð |
Ð |
10 |
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AK |
DRM |
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RRM |
J |
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TJ = 110°C |
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Ð |
Ð |
500 |
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Peak Reverse Gate Blocking Current |
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IRGM |
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mA |
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(VGR = 10 V) |
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Ð |
Ð |
1.2 |
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Peak On±State Voltage (2) |
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V |
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Volts |
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(ITM = 16 A) |
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TM |
Ð |
1.4 |
1.8 |
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Gate Trigger Current (Continuous dc) (3) |
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I |
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mA |
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(VD = 12 V, RL = 100 W, TJ = 25°C) |
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GT |
5.0 |
12 |
200 |
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(VD = 12 V, RL = 100 W, TJ = ±40°C) |
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Ð |
Ð |
300 |
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Gate Trigger Voltage (Continuous dc) |
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VGT |
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Volts |
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(VD = 12 V, RL = 100 W, TJ = 25°C) |
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0.45 |
0.65 |
1.0 |
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(VD = 12 V, RL = 100 W, TJ = ±40°C) |
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Ð |
Ð |
1.5 |
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(VD = 12 V, RL = 100 W, TJ = 110°C) |
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0.2 |
Ð |
Ð |
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Holding Current |
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IH |
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mA |
(VD = 12 V, I(init) = 200 mA, TJ = 25°C) |
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0.5 |
1.0 |
6.0 |
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(VD = 12 V, I(init) = 200 mA, TJ = ±40°C) |
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Ð |
Ð |
10 |
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Latching Current |
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IL |
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mA |
(VD = 12 V, IG = 2.0 mA, TJ = 25°C) |
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0.5 |
1.0 |
6.0 |
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(VD = 12 V, IG = 2.0 mA, TJ = ±40°C) |
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Ð |
Ð |
10 |
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DYNAMIC CHARACTERISTICS |
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Characteristics |
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Symbol |
Min |
Typ |
Max |
Unit |
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Total Turn±On Time |
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tgt |
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ms |
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(Source Voltage = 12 V, RS = 6.0 KW, IT = 16 A(pk), RGK = 1.0 KW) |
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Ð |
2.0 |
5.0 |
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(VD = Rated VDRM, Rise Time = 20 ns, Pulse Width = 10 ms) |
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Critical Rate of Rise of Off±State Voltage |
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dv/dt |
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V/ms |
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(VD = 0.67 X Rated VDRM, Exponential Waveform, |
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2.0 |
10 |
Ð |
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RGK = 1.0 KW, TJ = 110°C) |
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(1)Ratings apply for negative gate voltage or RGK = 1.0 KW. Devices shall not have a positive gate voltage concurrently with a negative voltage on the anode. Devices should not be tested with a constant current source for forward and reverse blocking capability such that the voltage applied exceeds the rated blocking voltage.
(2)Pulse Test; Pulse Width ≤ 2.0 msec, Duty Cycle ≤ 2%.
(3)Does not include RGK current.
2 |
Motorola Thyristor Device Data |
°C) |
110 |
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( |
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TEMPERATURE |
105 |
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a |
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100 |
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a = Conduction |
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Angle |
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CASE |
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ALLOWABLE |
95 |
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dc |
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90 |
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MAXIMUM |
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a = 30° |
60° |
90° |
120° |
180° |
85 |
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0 |
1.0 |
2.0 |
3.0 |
4.0 |
5.0 |
6.0 |
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, |
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C |
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IT(AV), AVERAGE ON±STATE CURRENT (AMPS) |
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T |
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MCR8DSM |
MCR8DSN |
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(WATTS) |
12 |
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10 |
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DISSIPATION |
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a |
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180° |
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8.0 |
a = Conduction |
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90° |
120° |
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Angle |
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dc |
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POWER |
6.0 |
a = 30° |
60° |
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4.0 |
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, AVERAGE |
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2.0 |
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(AV) |
0 |
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P |
1.0 |
2.0 |
3.0 |
4.0 |
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5.0 |
6.0 |
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0 |
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IT(AV), AVERAGE ON±STATE CURRENT (AMPS)
Figure 1. Average Current Derating |
Figure 2. On±State Power Dissipation |
CURRENT(AMPS) |
100 |
TYPICAL @ TJ = 25°C |
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1.0 |
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RESISTANCE |
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MAXIMUM @ TJ = 110°C |
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10 |
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, INSTANTANEOUS ON±STATE |
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THERMAL |
(NORMALIZED) |
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0.1 |
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MAXIMUM @ TJ = 25°C |
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1.0 |
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, TRANSIENT |
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(t) |
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0.1 |
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r |
0.01 |
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T |
0 |
1.0 |
2.0 |
3.0 |
4.0 |
5.0 |
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I |
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VT, INSTANTANEOUS ON±STATE VOLTAGE (VOLTS) |
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ZqJC(t) = RqJC(t)Sr(t) |
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0.1 |
1.0 |
10 |
100 |
1000 |
10 K |
t, TIME (ms)
Figure 3. On±State Characteristics |
Figure 4. Transient Thermal Response |
1000 |
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1.0 |
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RGK = 1.0 KW |
GATE TRIGGER VOLTAGE (VOLTS) |
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100 |
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10 |
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GATE OPEN |
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CURRENTTRIGGER, GATEA)m( |
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GT |
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, |
I |
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GT |
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V |
1.0 |
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35 |
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0.1 |
±40 |
±25 |
±10 |
5.0 |
20 |
50 |
65 |
80 |
95 |
110 |
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TJ, JUNCTION TEMPERATURE (°C) |
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±40 |
±25 |
±10 |
5.0 |
20 |
35 |
50 |
65 |
80 |
95 |
110 |
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TJ, JUNCTION TEMPERATURE (°C) |
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Figure 5. Typical Gate Trigger Current versus |
Figure 6. Typical Gate Trigger Voltage versus |
Junction Temperature |
Junction Temperature |
Motorola Thyristor Device Data |
3 |
MCR8DSM |
MCR8DSN |
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10 |
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10 |
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RGK = 1.0 KW |
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RGK = 1.0 KW |
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CURRENT (mA) |
1.0 |
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CURRENT (mA) |
1.0 |
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, HOLDING |
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LATCHING |
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H |
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, |
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L |
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I |
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I |
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0.1 |
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0.1 |
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±40 |
±25 |
±10 |
5.0 |
20 |
35 |
50 |
65 |
80 |
95 |
110 |
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±40 |
±25 |
±10 |
5.0 |
20 |
35 |
50 |
65 |
80 |
95 |
110 |
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TJ, JUNCTION TEMPERATURE (°C) |
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TJ, JUNCTION TEMPERATURE (°C) |
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Figure 7. Typical Holding Current versus |
Figure 8. Typical Latching Current versus |
Junction Temperature |
Junction Temperature |
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10 |
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TJ = 25°C |
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(mA) |
8.0 |
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CURRENT |
6.0 |
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IGT = 25 mA |
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, HOLDING |
4.0 |
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H |
2.0 |
IGT = 10 mA |
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I |
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0 |
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100 |
1000 |
10 K |
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RGK, GATE±CATHODE RESISTANCE (OHMS) |
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Figure 9. Holding Current versus
Gate±Cathode Resistance
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1000 |
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s) |
100 |
70°C |
m |
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(V/ |
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dv/dt |
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90°C |
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TJ = 110°C |
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STATIC |
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10 |
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1.0 |
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100 |
1000 |
RGK, GATE±CATHODE RESISTANCE (OHMS)
Figure 10. Exponential Static dv/dt versus
Gate±Cathode Resistance and Junction
Temperature
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1000 |
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1000 |
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TJ = 110°C |
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400 V |
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s) |
100 |
600 V |
s) |
100 |
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(V/ m |
(V/m |
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dv/dt |
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VPK = 800 V |
dv/dt |
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STATIC |
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STATIC |
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10 |
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10 |
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1.0 |
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1.0 |
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100 |
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1000 |
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VD = 800 V |
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TJ = 110°C |
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IGT = 25 mA |
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IGT = 10 mA |
100 |
1000 |
RGK, GATE±CATHODE RESISTANCE (OHMS) |
RGK, GATE±CATHODE RESISTANCE (OHMS) |
Figure 11. Exponential Static dv/dt versus |
Figure 12. Exponential Static dv/dt versus |
Gate±Cathode Resistance and Peak Voltage |
Gate±Cathode Resistance and Gate Trigger |
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Current Sensitivity |
4 |
Motorola Thyristor Device Data |
MCR8DSM MCR8DSN
PACKAGE DIMENSIONS
±T± SEATINGPLANE
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B |
C |
V |
R |
E |
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4 |
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Z |
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S |
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A |
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1 |
2 |
3 |
U |
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K |
F |
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J |
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H |
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D 2 PL
G |
0.13 (0.005) M T |
NOTES:
1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2.CONTROLLING DIMENSION: INCH.
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INCHES |
MILLIMETERS |
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DIM |
MIN |
MAX |
MIN |
MAX |
A |
0.235 |
0.250 |
5.97 |
6.35 |
B |
0.250 |
0.265 |
6.35 |
6.73 |
C |
0.086 |
0.094 |
2.19 |
2.38 |
D |
0.027 |
0.035 |
0.69 |
0.88 |
E |
0.033 |
0.040 |
0.84 |
1.01 |
F |
0.037 |
0.047 |
0.94 |
1.19 |
G |
0.180 BSC |
4.58 BSC |
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H |
0.034 |
0.040 |
0.87 |
1.01 |
J |
0.018 |
0.023 |
0.46 |
0.58 |
K |
0.102 |
0.114 |
2.60 |
2.89 |
L |
0.090 BSC |
2.29 BSC |
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R |
0.175 |
0.215 |
4.45 |
5.46 |
S |
0.020 |
0.050 |
0.51 |
1.27 |
U |
0.020 |
±±± |
0.51 |
±±± |
V |
0.030 |
0.050 |
0.77 |
1.27 |
Z |
0.138 |
±±± |
3.51 |
±±± |
STYLE 4:
PIN 1. CATHODE
2. ANODE
3. GATE
4. ANODE
CASE 369A±13
ISSUE Y
Motorola Thyristor Device Data |
5 |