Материал: mgy20n120drev0
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MGY20N120D/D
Designer's Data Sheet
Insulated Gate Bipolar Transistor with Anti-Parallel Diode
N±Channel Enhancement±Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) is co±packaged |
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with a soft recovery ultra±fast rectifier and uses an advanced |
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termination scheme to provide an enhanced and reliable high |
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voltage±blocking capability. Short circuit rated IGBT's are specifi- |
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cally suited for applications requiring a guaranteed short circuit |
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withstand time such as Motor Control Drives. Fast switching |
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characteristics result in efficient operation at high frequencies. |
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Co±packaged IGBT's save space, reduce assembly time and cost. |
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• Industry Standard High Power TO±264 Package (TO±3PBL) |
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C |
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• High Speed Eoff: 160 mJ per Amp typical at 125°C |
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• High Short Circuit Capability ± 10 ms minimum |
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• Soft Recovery Free Wheeling Diode is included in the package |
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• Robust High Voltage Termination |
G |
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• Robust RBSOA |
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MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
MGY20N120D
Motorola Preferred Device
IGBT & DIODE IN TO±264
20 A @ 90°C
28 A @ 25°C
1200 VOLTS
SHORT CIRCUIT RATED
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C |
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CASE 340G±02, Style 5 |
TO±264 |
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Rating |
Symbol |
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Value |
Unit |
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Collector±Emitter Voltage |
VCES |
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1200 |
Vdc |
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Collector±Gate Voltage (RGE = 1.0 MW) |
VCGR |
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1200 |
Vdc |
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Gate±Emitter Voltage Ð Continuous |
VGE |
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±20 |
Vdc |
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Collector Current Ð |
Continuous @ T C = 25°C |
IC25 |
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28 |
Adc |
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Continuous @ T C = 90°C |
IC90 |
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20 |
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Ð Repetitive Pulsed Current (1) |
ICM |
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56 |
Apk |
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Total Power Dissipation @ TC = 25°C |
PD |
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174 |
Watts |
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Derate above 25°C |
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1.39 |
W/°C |
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Operating and Storage Junction Temperature Range |
TJ, Tstg |
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± 55 to 150 |
°C |
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Short Circuit Withstand Time |
tsc |
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10 |
ms |
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(VCC = 720 Vdc, VGE = 15 Vdc, TJ = 125°C, RG = 20 W) |
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Thermal Resistance |
Ð Junction to Case ± IGBT |
RqJC |
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0.7 |
°C/W |
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Ð Junction to Case ± Diode |
RqJC |
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1.1 |
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Ð Junction to Ambient |
RqJA |
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35 |
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Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds |
TL |
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260 |
°C |
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Mounting Torque, 6±32 or M3 screw |
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10 lbfSin (1.13 NSm) |
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(1) Pulse width is limited by maximum junction temperature. Repetitive rating.
Designer's Data for ªWorst Caseº Conditions Ð The Designer' s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves Ð representing boundaries on device characteristics Ð are given to facilitate ªworst caseº design.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola, Inc. 1996
MGY20N120D
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic |
Symbol |
Min |
Typ |
Max |
Unit |
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OFF CHARACTERISTICS |
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Collector±to±Emitter Breakdown Voltage |
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BVCES |
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Vdc |
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(VGE = 0 Vdc, IC = 25 μAdc) |
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1200 |
Ð |
Ð |
mV/°C |
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Temperature Coefficient (Positive) |
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Ð |
870 |
Ð |
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Zero Gate Voltage Collector Current |
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ICES |
Ð |
Ð |
100 |
μAdc |
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(VCE = 1200 Vdc, VGE = 0 Vdc) |
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(VCE = 1200 Vdc, VGE = 0 Vdc, TJ = 125°C) |
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Ð |
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2500 |
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Gate±Body Leakage Current (VGE = ± 20 Vdc, VCE = 0 Vdc) |
IGES |
Ð |
Ð |
250 |
nAdc |
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ON CHARACTERISTICS (1) |
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Collector±to±Emitter On±State Voltage |
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VCE(on) |
Ð |
3.00 |
3.54 |
Vdc |
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(VGE = 15 Vdc, IC = 10 Adc) |
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(VGE = 15 Vdc, IC = 10 Adc, TJ = 125°C) |
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Ð |
2.36 |
Ð |
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(VGE = 15 Vdc, IC = 20 Adc) |
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Ð |
2.90 |
4.99 |
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Gate Threshold Voltage |
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VGE(th) |
4.0 |
6.0 |
8.0 |
Vdc |
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(VCE = VGE, IC = 1.0 mAdc) |
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mV/°C |
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Threshold Temperature Coefficient (Negative) |
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10 |
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Forward Transconductance (VCE = 10 Vdc, IC = 20 Adc) |
gfe |
Ð |
12 |
Ð |
Mhos |
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DYNAMIC CHARACTERISTICS |
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Input Capacitance |
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(VCE = 25 Vdc, VGE = 0 Vdc, |
Cies |
Ð |
1876 |
Ð |
pF |
Output Capacitance |
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Coes |
Ð |
208 |
Ð |
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f = 1.0 MHz) |
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Transfer Capacitance |
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Cres |
Ð |
31 |
Ð |
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SWITCHING CHARACTERISTICS (1) |
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Turn±On Delay Time |
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(VCC = 720 Vdc, IC = 20 Adc, |
td(on) |
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88 |
Ð |
ns |
Rise Time |
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tr |
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103 |
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VGE = 15 Vdc, L = 300 mH |
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Turn±Off Delay Time |
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RG = 20 Ω, TJ = 25°C) |
td(off) |
Ð |
190 |
Ð |
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Energy losses include ªtailº |
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Fall Time |
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tf |
Ð |
284 |
Ð |
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Turn±Off Switching Loss |
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Eoff |
Ð |
1.65 |
3.75 |
mJ |
Turn±On Switching Loss |
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Eon |
Ð |
2.42 |
7.68 |
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Total Switching Loss |
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Ets |
Ð |
4.07 |
11.43 |
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Turn±On Delay Time |
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(VCC = 720 Vdc, IC = 20 Adc, |
td(on) |
Ð |
83 |
Ð |
ns |
Rise Time |
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tr |
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107 |
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VGE = 15 Vdc, L = 300 mH |
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Turn±Off Delay Time |
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RG = 20 Ω, TJ = 125°C) |
td(off) |
Ð |
216 |
Ð |
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Energy losses include ªtailº |
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Fall Time |
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tf |
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494 |
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Turn±Off Switching Loss |
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Eoff |
Ð |
3.19 |
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mJ |
Turn±On Switching Loss |
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Eon |
Ð |
4.26 |
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Total Switching Loss |
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Ets |
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7.45 |
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Gate Charge |
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(VCC = 720 Vdc, IC = 20 Adc, |
QT |
Ð |
63 |
Ð |
nC |
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Q1 |
Ð |
20 |
Ð |
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VGE = 15 Vdc) |
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Q2 |
Ð |
27 |
Ð |
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DIODE CHARACTERISTICS |
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Diode Forward Voltage Drop |
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VFEC |
Ð |
2.92 |
3.59 |
Vdc |
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(IEC = 10 Adc) |
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(IEC = 10 Adc, TJ = 125°C) |
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Ð |
1.73 |
Ð |
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(IEC = 20 Adc) |
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Ð |
3.67 |
4.57 |
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(1) Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%. |
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(continued) |
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2 |
Motorola TMOS Power MOSFET Transistor Device Data |
MGY20N120D
ELECTRICAL CHARACTERISTICS Ð continued (TJ = 25°C unless otherwise noted)
Characteristic |
Symbol |
Min |
Typ |
Max |
Unit |
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DIODE CHARACTERISTICS Ð continued |
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Reverse Recovery Time |
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trr |
Ð |
114 |
Ð |
ns |
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(IF = 20 Adc, VR = 720 Vdc, |
ta |
Ð |
74 |
Ð |
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dIF/dt = 150 A/ms) |
t |
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40 |
Ð |
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b |
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Reverse Recovery Stored Charge |
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QRR |
Ð |
0.68 |
Ð |
mC |
Reverse Recovery Time |
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trr |
Ð |
224 |
Ð |
ns |
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(IF = 20 Adc, VR = 720 Vdc, |
ta |
Ð |
149 |
Ð |
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dIF/dt = 150 A/ms, TJ = 125°C) |
t |
Ð |
75 |
Ð |
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b |
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Reverse Recovery Stored Charge |
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QRR |
Ð |
2.40 |
Ð |
mC |
INTERNAL PACKAGE INDUCTANCE |
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Internal Emitter Inductance |
LE |
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nH |
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(Measured from the emitter lead 0.25″ from package to emitter bond pad) |
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Ð |
13 |
Ð |
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TYPICAL ELECTRICAL CHARACTERISTICS
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60 |
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VGE = 20 V |
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60 |
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VGE = 20 V |
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(AMPS) |
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TJ = 25°C |
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15 V |
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(AMPS) |
TJ = 125°C |
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15 V |
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50 |
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17.5 V |
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50 |
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17.5 V |
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CURRENT |
40 |
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12.5 V |
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CURRENT |
40 |
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12.5 V |
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30 |
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30 |
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,COLLECTOR |
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,COLLECTOR |
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20 |
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20 |
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10 V |
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10 |
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10 V |
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10 |
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C |
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C |
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I |
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I |
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0 |
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2 |
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4 |
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6 |
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8 |
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0 |
2 |
4 |
6 |
8 |
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0 |
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0 |
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VCE, COLLECTOR±TO±EMITTER VOLTAGE (VOLTS) |
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VCE, COLLECTOR±TO±EMITTER VOLTAGE (VOLTS) |
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Figure 1. Output Characteristics, TJ = 25°C |
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Figure 2. Output Characteristics, TJ = 125°C |
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60 |
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(VOLTS) |
4 |
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VCE |
= 10 V |
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VGE = 15 V |
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CURRENT (AMPS) |
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250 ms PULSE WIDTH |
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VOLTAGE |
250 ms PULSE WIDTH |
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TJ = 125°C |
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IC = 20 A |
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40 |
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3 |
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15 A |
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10 A |
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, COLLECTOR |
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COLLECTOR±TO±EMITTER |
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20 |
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2 |
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25°C |
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C |
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0 |
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CE |
1 |
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5 |
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7 |
8 |
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10 |
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12 |
13 |
14 |
15 |
V |
± 50 |
0 |
50 |
100 |
150 |
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VGE, GATE±TO±EMITTER VOLTAGE (VOLTS) |
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TJ, JUNCTION TEMPERATURE (°C) |
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Figure 3. Transfer Characteristics |
Figure 4. Collector±to±Emitter Saturation |
Voltage versus Junction Temperature
Motorola TMOS Power MOSFET Transistor Device Data |
3 |
MGY20N120D |
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10000 |
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TJ = 25°C |
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Cies |
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(pF) |
1000 |
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CAPACITANCE |
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Coes |
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100 |
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Cres |
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C, |
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10 |
5 |
10 |
15 |
20 |
25 |
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0 |
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GATE±TO±EMITTER OR COLLECTOR±TO±EMITTER VOLTAGE (VOLTS)
Figure 5. Capacitance Variation
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10000 |
VGE = 0 V |
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TJ = 25°C |
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Cies |
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(pF) |
1000 |
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CAPACITANCE |
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100 |
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Coes |
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C, |
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Cres |
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10 |
100 |
150 |
200 |
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50 |
COLLECTOR±TO±EMITTER VOLTAGE (VOLTS)
Figure 5b. High Voltage Capacitance
Variation
(VOLTS) |
16 |
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QT |
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VOLTAGE |
12 |
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10 |
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, GATE±TO±EMITTER |
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8 |
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Q1 |
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Q2 |
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6 |
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4 |
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TJ = 25°C |
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IC = 20 A |
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V |
0 |
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5 |
10 |
15 |
20 |
25 |
30 |
35 |
40 |
45 |
50 |
55 |
60 |
65 |
70 |
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0 |
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Qg, TOTAL GATE CHARGE (nC)
Figure 6. Gate±to±Emitter and Collector±to±Emitter
Voltage versus Total Charge
(mJ) |
6 |
VCC = 720 V |
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VGE = 15 V |
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LOSSES |
5 |
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IC = 25 A |
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TJ = 25°C |
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4 |
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ENERGY |
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15 A |
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3 |
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SWITCHING |
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10 A |
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2 |
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TOTAL |
1 |
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RG, GATE RESISTANCE (OHMS) |
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Figure 7. Total Switching Losses versus
Gate Resistance
(mJ) |
5 |
VCC = 720 V |
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LOSSESENERGY |
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VGE = 15 V |
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LOSSESENERGY |
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RG = 20 Ω |
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IC = 20 A |
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15 A |
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SWITCHING |
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SWITCHING |
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10 A |
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TOTAL |
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TOTAL |
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75 |
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125 |
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TC, CASE TEMPERATURE (°C) |
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Figure 8. Total Switching Losses versus
Case Temperature
5 |
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VCC |
= 720 |
V |
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VGE |
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4 |
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RG |
= 20 Ω |
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TJ = |
125°C |
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IC, COLLECTOR±TO±EMITTER CURRENT (AMPS)
Figure 9. Total Switching Losses versus Collector±to±Emitter Current
4 |
Motorola TMOS Power MOSFET Transistor Device Data |
CURRENTFORWARD(AMPS) |
40 |
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CURRENTCOLLECTOR±TO±EMITTER(A) |
30 |
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TJ = 125°C |
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20 |
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TJ = 25°C |
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INSTANTANEOUS |
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C |
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VFM, FORWARD VOLTAGE DROP (VOLTS) |
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MGY20N120D
100
10
1
VGE = 15 V
RGE = 20 Ω
TJ = 125°C
0.1
1 |
10 |
100 |
1000 |
VCE, COLLECTOR±TO±EMITTER VOLTAGE (VOLTS)
Figure 10. Maximum Forward Drop versus |
Figure 11. Reverse Biased |
Instantaneous Forward Current |
Safe Operating Area |
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1.0 |
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TRANSIENT THERMAL RESISTANCE |
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D = 0.5 |
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r(t), NORMALIZED EFFECTIVE |
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0.2 |
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0.1 |
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0.1 |
0.05 |
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P(pk) |
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0.02 |
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RθJC(t) = r(t) RθJC |
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0.01 |
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D CURVES APPLY FOR POWER |
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t1 |
PULSE TRAIN SHOWN |
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SINGLE PULSE |
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READ TIME AT t1 |
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t2 |
T |
J(pk) |
± T |
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Rθ |
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DUTY CYCLE, D = t1/t2 |
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JC |
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0.01 |
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1.0E±05 |
1.0E±04 |
1.0E±03 |
1.0E±02 |
1.0E±01 |
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1.0E+00 |
1.0E+01 |
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t, TIME (s)
Figure 12. Thermal Response
Motorola TMOS Power MOSFET Transistor Device Data |
5 |