Материал: mhpm7a15s120dc3rev0

Внимание! Если размещение файла нарушает Ваши авторские права, то обязательно сообщите нам

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MHPM7A15S120DC3/D

Product Preview

Hybrid Power Module

Integrated Power Stage for 3.0 hp 460 VAC Motor Drive

MHPM7A15S120DC3

Motorola Preferred Device

This module integrates a 3±phase inverter, 3±phase rectifier,

 

15 AMP, 1200 VOLT

 

brake, and temperature sense in a single convenient package. It is

 

 

 

HYBRID POWER MODULE

 

designed for 3.0 hp general purpose 3±phase induction motor drive

 

 

 

 

 

applications. The inverter incorporates advanced insulated gate

 

 

 

bipolar transistors (IGBT) matched with fast soft free±wheeling

 

 

 

diodes to give optimum performance. The solderable top connector

 

 

 

pins are designed for easy interfacing to the user's control board.

 

 

 

Short Circuit Rated 10 μs @ 125°C, 720 V

 

 

 

 

 

Pin-to-Baseplate Isolation Exceeds 2500 Vac (rms)

 

 

 

 

Compact Package Outline

 

 

 

 

 

Access to Positive and Negative DC Bus

 

 

 

 

 

Independent Brake Circuit Connections

 

 

 

 

 

UL Recognition Pending

 

 

 

 

 

 

ORDERING INFORMATION

 

 

 

 

 

Voltage

Current

Equivalent

 

CASE 464D±01

 

Device

Rating

Rating

Horsepower

 

 

 

ISSUE O

 

PHPM7A15S120DC3

1200

15

3.0

 

 

 

 

 

MAXIMUM DEVICE RATINGS (TJ = 25°C unless otherwise noted)

 

 

 

 

Rating

 

 

Symbol

Value

Unit

Repetitive Peak Input Rectifier Reverse Voltage (TJ = 25°C to 150°C)

VRRM

900

V

Non±Repetitive Peak Input Rectifier Reverse Voltage (1)

 

V

1600

V

(TJ = 25°C to 150°C)

 

 

 

RSM

 

 

 

 

 

 

 

 

IGBT Reverse Voltage

 

 

 

VCES

1200

V

Gate-Emitter Voltage

 

 

 

VGES

± 20

V

Continuous IGBT Collector Current (TC = 25°C)

 

 

ICmax

15

A

Repetitive Peak IGBT Collector Current (2)

 

 

I

30

A

 

 

 

 

C(pk)

 

 

Continuous Free±Wheeling Diode Current (TC = 25°C)

 

IFmax

15

A

Continuous Free±Wheeling Diode Current (TC = 80°C)

 

IF80

11.7

A

Repetitive Peak Free±Wheeling Diode Current (2)

 

 

I

30

A

 

 

 

 

F(pk)

 

 

Average Converter Output Current (Peak±to±Average ratio of 10, TC = 95°C)

IOmax

16

A

IGBT Power Dissipation per die (TC = 95°C)

 

 

PD

36

W

Free±Wheeling Diode Power Dissipation per die (TC = 95°C)

 

PD

16

W

Junction Temperature Range

 

 

 

TJ

± 40 to +150

°C

Short Circuit Duration (VCE = 720 V, TJ = 125°C)

 

 

tsc

10

ms

Isolation Voltage, pin to baseplate

 

 

VISO

2500

Vac

Operating Case Temperature Range

 

 

TC

± 40 to +95

°C

Storage Temperature Range

 

 

 

Tstg

± 40 to +150

°C

Mounting Torque Ð Heat Sink Mounting Holes

 

 

Ð

12

lb±in

(1)Half±Sine 60 Hz, maximum reverse voltage capability decreases by 0.1% per °C at lower temperature

(2)1.0 ms = 1.0% duty cycle

Preferred devices are Motorola recommended choices for future use and best overall value.

This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.

 

IGBT Device Data

1

Motorola, Inc. 1998

 

MHPM7A15S120DC3

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

 

 

 

 

 

 

DC AND SMALL SIGNAL CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

Input Rectifier Forward Voltage (IF = 15 A)

VF

Ð

1.09

1.38

V

Gate±Emitter Leakage Current (VCE = 0 V, VGE = ± 20 V)

IGES

Ð

Ð

±20

mA

Collector±Emitter Leakage Current (VCE = 1200 V, VGE = 0 V)

ICES

Ð

5.0

100

mA

Gate±Emitter Threshold Voltage (VCE = VGE, IC = 1.0 mA)

VGE(th)

4.0

6.0

8.0

V

Collector±Emitter Breakdown Voltage (IC = 10 mA, VGE = 0 V)

V(BR)CES

1200

Ð

Ð

V

Collector±Emitter Saturation Voltage (IC = ICmax, VGE = 15 V)

VCE(sat)

Ð

2.5

3.5

V

Free±Wheeling Diode Forward Voltage (IF = IFmax, VGE = 0 V)

VF

1.8

2.0

2.5

V

Input Capacitance (VGE = 0 V, VCE = 25 V, f = 1.0 MHz)

Cies

Ð

2800

Ð

pF

Input Gate Charge (VCE = 600 V, IC = ICmax, VGE = 15 V)

QT

Ð

100

Ð

nC

THERMAL CHARACTERISTICS, EACH DIE

 

 

 

 

 

 

 

 

 

 

 

Thermal Resistance Ð IGBT

RqJC

Ð

1.1

1.5

°C/W

Thermal Resistance Ð Free±Wheeling (Fast Soft) Diode

RqJC

Ð

2.4

3.3

°C/W

Thermal Resistance Ð Input Rectifier

RqJC

Ð

3.2

4.2

°C/W

TEMPERATURE SENSE DIODE

 

 

 

 

 

 

 

 

 

 

 

Forward Voltage (@ IF = 1.0 mA)

VF

1.983

2.024

2.066

V

Forward Voltage Temperature Coefficient (@ IF = 1.0 mA)

TCVF

Ð

±8.64

Ð

mV/°C

2

Motorola IGBT Device Data

 

 

 

 

 

 

 

 

 

 

 

 

MHPM7A15S120DC3

 

 

 

 

 

 

TYPICAL CHARACTERISTICS

 

 

 

 

 

 

30

 

 

 

 

 

 

 

30

 

 

 

 

 

 

 

27

 

 

 

 

TJ = 25°C

 

 

 

 

 

 

 

 

 

(AMPS)

 

 

 

 

 

 

(AMPS)

25

 

 

 

 

 

 

24

 

 

 

 

 

 

 

 

TJ = 125°C

 

25°C

 

 

 

 

 

 

 

 

 

 

 

 

21

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

20

 

 

 

 

 

 

CURRENT

 

 

 

 

 

 

CURRENT

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

18

 

 

 

 

 

 

 

 

 

 

 

 

 

15

 

 

 

 

 

 

15

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

,FORWARD

12

 

 

 

 

 

 

,FORWARD

10

 

 

 

 

 

 

9.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

6.0

 

 

 

 

 

 

5.0

 

 

 

 

 

 

F

 

 

 

 

 

 

F

 

 

 

 

 

 

I

 

 

 

 

 

 

 

I

 

 

 

 

 

 

 

3.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0

 

 

 

 

 

 

 

0

 

 

 

 

 

 

 

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

0

0.5

1.0

1.5

2.0

2.5

3.0

 

 

 

VF, FORWARD VOLTAGE (VOLTS)

 

 

 

 

VF, FORWARD VOLTAGE (VOLTS)

 

 

Figure 1. Forward Characteristics Ð

Figure 2. Forward Characteristics Ð

Input Rectifier

Free±Wheeling Diode

 

30

 

 

 

 

 

30

 

 

 

VGE = 18 V

15 V

(AMPS)

 

(AMPS)

25

 

 

 

12 V

25

 

 

 

 

 

 

 

 

 

 

 

CURRENT

20

 

 

 

 

CURRENT

20

15

 

 

 

 

15

,COLLECTOR

10

 

 

 

 

, COLLECTOR

10

 

 

 

 

TJ = 25°C

 

5.0

 

 

 

 

5.0

C

 

 

 

 

C

 

 

 

 

 

 

I

 

 

 

 

 

I

 

 

0

 

 

 

 

 

0

 

0

1.0

2.0

3.0

4.0

5.0

 

 

 

VCE, COLLECTOR±TO±EMITTER VOLTAGE (VOLTS)

 

 

 

 

 

 

VGE = 18 V

15 V

12 V

 

 

 

 

 

 

 

 

 

 

TJ = 125°C

 

0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

 

VCE, COLLECTOR±TO±EMITTER VOLTAGE (VOLTS)

 

Figure 3. Forward Characteristics, TJ = 25°C

Figure 4. Forward Characteristics, TJ = 125°C

+15 V

 

MBRS130T3

 

160 W

 

MC33153

 

RG(on)

20 W

 

RG(off)

MBRS130T3

 

MBRS130T3

 

Figure 5. Recommended Gate Drive Circuit

Motorola IGBT Device Data

3

MHPM7A15S120DC3

TYPICAL CHARACTERISTICS

+15 V

R1

12.4 kW

A/D INPUT 14

15

VF, FORWARD VOLTAGE @ 1 mA (VOLTS)

2.5

MAXIMUM

2.0

TYPICAL

MINIMUM

1.5

1.0

TYPICAL

VF = 2.240 ± 0.00864 T

0.5MIN: 2.199 ± 0.00864 T

MAX: 2.282 ± 0.00864 T

0

0

20

40

60

80

100

120

140

160

T, TEMPERATURE (°C)

 

Figure 6. Recommended Temperature Sense

 

 

Figure 7. BAV99LT1 Temperature Sense Diode

 

 

 

 

Bias Circuit

 

 

 

 

 

 

 

Performance: VF = 2.59 ± 7.31E±3 TC

MOTOR OUTPUT

 

 

 

 

 

 

 

BRAKE RESISTOR

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

U

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

R

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

S

3 PHASE INPUT

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

W

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

T

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1

2

3

4

5

6

7

8

9

10

11

 

12

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

D7

 

 

 

 

 

 

 

D8

D10

D12

D1

Q1

D3

Q3

D5

Q5

 

 

 

 

 

 

 

D9

D11

D13

 

 

 

 

 

TEMP

 

 

 

 

 

 

 

SENSE

 

 

 

 

 

 

 

D14

 

 

Q2

Q4

Q6

Q7

 

D2

D4

D6

 

24

23

22

21

20

19

18

17

16

15

14

13

R1

 

 

 

 

 

 

 

 

 

 

FILTER

SENSE

 

R2

 

R3

 

 

 

 

 

 

 

 

 

+

 

 

 

 

 

RESISTOR

 

 

 

 

 

C1

 

 

 

R NTC

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

FILTER

 

 

 

 

 

 

 

 

 

 

 

Figure 8. Schematic of Module, Showing Pin±Out and

External Connections

4

Motorola IGBT Device Data

MHPM7A15S120DC3

KEEP±OUT ZONES (x4)

0.585

0.066

 

0.250

0.175

 

 

0.450

 

1.850

0.925

0.270

 

 

 

0.140

 

 

OPTIONAL NON±PLATED

 

 

 

 

 

NON±PLATED

 

 

THRU±HOLES FOR ACCESS

THRU±HOLE

 

 

TO HEAT SINK MOUNTING

 

 

 

PLATED THRU±HOLES (x24)

 

SCREWS (x2)

 

 

 

 

 

NOTES:

1.Package is symmetrical, except for a polarizing plastic post near pin 1, indicated by a non±plated thru±hole in the footprint.

2.Dimension of plated thru±holes indicates finished hole size after plating.

3.Access holes for mounting screws may or may not be necessary depending on assembly plan for finished product.

Figure 9. Package Footprint (Dimensions in Inches)

Motorola IGBT Device Data

5

Источник: https://studfile.net/preview/16503187/