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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MRF1507/D

The RF MOSFET Line	MRF1507
RF Power Field	Effect TransistorMRF1507T1

N±Channel Enhancement±Mode Lateral MOSFETs

The MRF1507 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large±signal, common source amplifier applications in 7.5 volt portable FM equipment.

• Specified Performance @ 520 MHz, 7.5 Volts
Output Power Ð 8 Watts
Power Gain Ð 10 dB
Efficiency Ð 65%
• Characterized with Series Equivalent Large±Signal		D
Impedance Parameters
Impedance Parameters
• Excellent Thermal Stability
• Capable of Handling 20:1 VSWR, @ 9.5 Vdc,
520 MHz, 2 dB Overdrive
520 MHz, 2 dB Overdrive
• Broadband UHF/VHF Demonstration Amplifier


Information Available Upon Request	G
Information Available Upon Request
• RF Power Plastic Surface Mount Package
• RF Power Plastic Surface Mount Package

• Available in Tape and Reel by Adding T1 Suffix to

Part Number. T1 Suffix = 1,000 Units per 12 mm, 7 Inch Reel.

MAXIMUM RATINGS

8 W, 520 MHz, 7.5 V LATERAL N±CHANNEL BROADBAND

RF POWER MOSFET

CASE 466±02, STYLE 1 (PLD 1.5)

Rating	Symbol	Value	Unit

Drain±Source Voltage (1)	VDSS	25	Vdc
Gate±Source Voltage	VGS	± 20	Vdc
Drain Current Ð Continuous	ID	4	Adc
Total Device Dissipation @ TC = 25°C	PD	62.5	Watts
Derate above 25°C		0.50	W/°C

Storage Temperature Range	Tstg	± 65 to +150	°C
Operating Junction Temperature	Tj	150	°C
THERMAL CHARACTERISTICS

Characteristic	Symbol	Max	Unit

Thermal Resistance, Junction to Case	RθJC	2	°C/W
(1) Not designed for 12.5 volt applications.

NOTE ± CAUTION ± MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.

REV 1

Motorola,MOTOROLAInc. 1998RF DEVICE DATA	MRF1507 MRF1507T1
	1

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic	Symbol	Min	Typ	Max	Unit

OFF CHARACTERISTICS

Zero Gate Voltage Drain Current	IDSS	Ð	Ð	1	μAdc
(VDS = 25 Vdc, VGS = 0)
Gate±Source Leakage Current	IGSS	Ð	Ð	1	μAdc
(VGS = 20 Vdc, VDS = 0)
ON CHARACTERISTICS

Gate Threshold Voltage	VGS(th)	2.5	3.4	Ð	Vdc
(VDS = 10 Vdc, ID = 100 μAdc)
Drain±Source On±Voltage	VDS(on)	0.3	0.44	Ð	Vdc
(VGS = 10 Vdc, ID = 2 Adc)
Forward Transconductance	gfs	1.30	1.80	Ð	S
(VDS = 10 Vdc, ID = 2 Adc)
DYNAMIC CHARACTERISTICS

Input Capacitance	Ciss	Ð	48	Ð	pF
(VDS = 7.5 Vdc, VGS = 0, f = 1 MHz)
Output Capacitance	Coss	Ð	40.5	Ð	pF
(VDS = 7.5 Vdc, VGS = 0, f = 1 MHz)
Reverse Transfer Capacitance	Crss	Ð	5.2	Ð	pF
(VDS = 7.5 Vdc, VGS = 0, f = 1 MHz)
FUNCTIONAL TESTS (In Motorola Test Fixture)

Common±Source Amplifier Power Gain	Gps	10	11	Ð	dB
(VDD = 7.5 Vdc, Pin = 29 dBm, IDQ = 150 mA, f = 520 MHz)
Drain Efficiency	η	50	65	Ð	%
(VDD = 7.5 Vdc, Pin = 29 dBm, IDQ = 150 mA, f = 520 MHz)
Pout	Pout	8	9.9	Ð	W
(VDD = 7.5 Vdc, Pin = 29 dBm, IDQ = 150 mA, f = 520 MHz)

MRF1507 MRF1507T1	MOTOROLA RF DEVICE DATA
2

VGG

Z10

Z11

DUT

C14

OUTPUT

C12

C13

INPUT

C10

C11

B1	Fair Rite Products Long Ferrite Bead	R4	20 W, 1/4 W Carbon
		Z1	0.459″ x 0.083″ Microstrip
C1, C5	0.1 mF, 100 mil Chip Capacitor
		Z2	0.135″ x 0.083″ Microstrip
C2, C4	10 mF, 50 V Electrolytic Capacitor
		Z3	1.104″ x 0.083″ Microstrip
C3, C6, C8, C14 130 pF, 100 mil Chip Capacitor
		Z4	0.114″ x 0.083″ Microstrip
C7, C9, C13	0.3±20 pF Trimmer Capacitor
		Z5	0.154″ x 0.083″ Microstrip
C10	82 pF, 100 mil Chip Capacitor
		Z6	0.259″ x 0.213″ Microstrip
C11	39 pF, 100 mil Chip Capacitor
		Z7	0.217″ x 0.213″ Microstrip
C12	32 pF, 100 mil Chip Capacitor
		Z8	0.175″ x 0.083″ Microstrip
L1	4 Turns, #20 AWG Enamel, 0.1″ ID
		Z9	0.747″ x 0.083″ Microstrip
N1, N2	Type N Connectors
		Z10	0.608″ x 0.083″ Microstrip
R1	1.1 MW, 1/4 W Carbon
		Z11	0.594″ x 0.083″ Microstrip
R2	2 kW, 1/2 W Carbon
		Board	Glass Teflon, 31 mils
R3	100 W, 1/4 W Carbon

Figure 1. 500 ± 520 MHz Broadband Test Circuit

TYPICAL CHARACTERISTICS

	11
	11
	10
(WATTS)	10			440 MHz
				440 MHz
	9
	9
	8
POWER	8							470 MHz
POWER	6							470 MHz
OUTPUT	7

	4		400 MHz
,	5
,
out	3
out	3								VDD =	7.5 V
P									VDD =	7.5 V
P
	2								IDQ =	200 mA
	1
	1	0.30	0.50		0.71	0.90	1.10		1.31		1.51
	0.10	0.30	0.50		0.71	0.90	1.10		1.31		1.51

Pin, INPUT POWER (WATTS)

Figure 2. Output Power versus Input Power

Pout , OUTPUT POWER (WATTS)

IDQ = 200 mA

700 mW

500 mW

Pin = 300 mW

VDD, SUPPLY VOLTAGE (V)

Figure 3. Output Power versus

Supply Voltage @ 400 MHz

MOTOROLA RF DEVICE DATA	MRF1507 MRF1507T1
	3

TYPICAL CHARACTERISTICS

	13
	13
	12
(WATTS)	12	IDQ = 200				mA
		IDQ = 200				mA
	11													700	mW
	11													700	mW
POWER	10
	10													500	mW
	9



OUTPUT,	8
	8
	7											Pin = 300			mW
	7
out	6
	6

P
	5
	5
	4
	4				7				8			9				10
	6				7				8			9				10
						VDD, SUPPLY VOLTAGE (V)
			Figure 4. Output Power versus
				Supply Voltage @ 470 MHz
(WATTS)	9
	9
	8.5


	8
POWER	8		f =	440 MHz									f =	470 MHz
POWER

OUTPUT,	7.5
	7.5						f = 400 MHz


out	7
	7


P	6.5
	6.5												V	CC = 7.5 V
													V	CC = 7.5 V
	6												Pin = 0.6 W
	6	50	100		150			200	250	300	350	400			450	500
	0	50	100		150			200	250	300	350	400			450	500

IDQ, GATE CURRENT (mA)

Figure 6. Output Power versus Gate Current

	13
	13
(WATTS)	12	IDQ = 200	mA			700 mW
(WATTS)	11


POWER	10
	10					500 mW
	9



OUTPUT,	8
	8
	7					Pin = 300 mW
	7
out	6
	6

P
	5
	5
	4
	4	7		8	9	10
	6	7		8	9	10

VDD, SUPPLY VOLTAGE (V)

Figure 5. Output Power versus

Supply Voltage @ 440 MHz

	20									80
	20									80
(WATTS)	16									70	(%)
	16			DRAIN EFFICIENCY						70
	12									60

(dB),GAIN											EFFICIENCYDRAIN
(dB),GAIN											EFFICIENCYDRAIN
out
P					GAIN
	8				GAIN
										50
					Pout		f = 520	MHz		50
					Pout
	4									40
	4						IDQ =	150 mA		40
							Pin =	0.7 W
	0									30
	0	5	6		7	8	9			30
	4	5	6		7	8	9		10

VDD, DRAIN VOLTAGE (V)

Figure 7. Gain, Pout, Efficiency

versus Drain Voltage

(WATTS)POWER	12										(WATTS)
(WATTS)POWER							GAIN				(WATTS)
							GAIN
OUTPUT	10								Pout		out
OUTPUT	10										(dB),
											P
(dB),P											GAIN
,
out
G									f = 520 MHz
G									VDD = 7.5 V
p
	8								Pin = 0.7 W
	8	0.1	0.2	0.3	0.4	0.5	0.6	0.7	0.8	0.9	1.0
	0	0.1	0.2	0.3	0.4	0.5	0.6	0.7	0.8	0.9	1.0
						IDQ (A)

15						GAIN
15

10
				DRAIN	EFFICIENCY
5								PPout
	f = 520	MHz
	VDD = 7.5 V
	IDQ = 150 mA
0
0	17		19	21		23	25	27
15	17		19	21		23	25	27

INPUT POWER (dBm)

	70
	70
	60	(%)
		(%)
	50	EFFICIENCY
	50
	40	DRAIN
		DRAIN
	30
	20
	20
29

Figure 8. Pout versus IDQ

Figure 9. Pout, Gain, Drain Efficiency versus Pin

MRF1507 MRF1507T1	MOTOROLA RF DEVICE DATA
4

Pout , OUTPUT POWER (WATTS)

				TYPICAL CHARACTERISTICS
						12
f = 500 MHz				700 mW	(WATTS)	10									700 mW
VDD = 7.5 V				500 mW		10
				500 mW		8									500 mW


					POWER	6								Pin = 250 mW
				Pin = 250 mW	OUTPUT,	4
				Pin = 250 mW

					out		f = 500 MHz
					P	2	f = 500 MHz
						2	VDD = 7.5 V
							VDD = 7.5 V
5	6	7	8	9	10	0	100	200	300	400	500	600	700	800	900	1000
5	6	7	8	9	10	0	100	200	300	400	500	600	700	800	900	1000
	VDS, DRAIN VOLTAGE (V)									IDQ, (mA)

Figure 10. Pout versus Drain Voltage

Figure 11. Pout versus IDQ

							12
f = 520 MHz				700 mW		(WATTS)	10									700 mW
VDD = 7.5 V						(WATTS)


				500 mW			8									500 mW
				500 mW		POWER	8
						POWER	6								Pin = 250 mW
						OUTPUT,	6

			Pin = 250 mW				4
			Pin = 250 mW				4
						out		f = 520 MHz
						P	2	f = 520 MHz
							2	VDD = 7.5 V
								VDD = 7.5 V
5	6	7		9	10		0	100		300		500		700
5	6	7	8	9	10		0	100	200	300	400	500	600	700	800	900	1000
	VDS, DRAIN VOLTAGE (V)										IDQ, (mA)

Figure 12. Pout versus Drain Voltage

Figure 13. Pout versus IDQ

	12								17
	12			VDD = 9 V					17
	11			VDD = 9 V
(WATTS)								(WATTS)	15

	10

POWER								POWER	13
									13
	9				VDD =	7.5 V			11
OUTPUT	9				VDD =	7.5 V		OUTPUT

	8								9
	8
,	7							,
out								out
P	6				f = 135	MHz		P	7
					f = 135	MHz
					IDQ =	800 mA
					IDQ =	800 mA
	5								5
	5	21	22	23	24		25		5
	20	21	22	23	24		25		20

Pin, (dBm)

Figure 14. Pout versus Pin

VDD = 9 V

VDD = 7.5 V

f = 155 MHz

IDQ = 800 mA

Pin, (dBm)

Figure 15. Pout versus Pin

MOTOROLA RF DEVICE DATA	MRF1507 MRF1507T1
	5

Источник: https://studfile.net/preview/16503478/

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