Материал: mrf316rev7
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF316/D
The RF Line
NPN Silicon
RF Power Transistor
. . . designed primarily for wideband large±signal output amplifier stages in the 30±200 MHz frequency range.
•Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 80 Watts
Minimum Gain = 10 dB
•Built±In Matching Network for Broadband Operation
•100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
•Gold Metallization System for High Reliability Applications
MAXIMUM RATINGS
Rating |
Symbol |
Value |
Unit |
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Collector±Emitter Voltage |
VCEO |
35 |
Vdc |
Collector±Base Voltage |
VCBO |
65 |
Vdc |
Emitter±Base Voltage |
VEBO |
4.0 |
Vdc |
Collector Current Ð Continuous |
IC |
9.0 |
Adc |
Peak |
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13.5 |
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Total Device Dissipation @ TC = 25°C (1) |
PD |
220 |
Watts |
Derate above 25°C |
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1.26 |
W/°C |
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Storage Temperature Range |
Tstg |
± 65 to +150 |
°C |
THERMAL CHARACTERISTICS
MRF316
80 W, 3.0 ± 200 MHz
CONTROLLED ªQº
BROADBAND RF POWER
TRANSISTOR
NPN SILICON
CASE 316±01, STYLE 1
Characteristic |
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Symbol |
Max |
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Unit |
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Thermal Resistance, Junction to Case |
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RθJC |
0.8 |
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°C/W |
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) |
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Characteristic |
Symbol |
Min |
Typ |
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Max |
Unit |
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OFF CHARACTERISTICS |
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Collector±Emitter Breakdown Voltage |
V(BR)CEO |
35 |
Ð |
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Ð |
Vdc |
(IC = 50 mAdc, IB = 0) |
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Collector±Emitter Breakdown Voltage |
V(BR)CES |
65 |
Ð |
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Ð |
Vdc |
(IC = 50 mAdc, VBE = 0) |
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Collector±Base Breakdown Voltage |
V(BR)CBO |
65 |
Ð |
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Ð |
Vdc |
(IC = 50 mAdc, IE = 0) |
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Emitter±Base Breakdown Voltage |
V(BR)EBO |
4.0 |
Ð |
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Ð |
Vdc |
(IE = 5.0 mAdc, IC = 0) |
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Collector Cutoff Current |
ICBO |
Ð |
Ð |
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5.0 |
mAdc |
(VCB = 30 Vdc, IE = 0) |
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ON CHARACTERISTICS |
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DC Current Gain |
hFE |
10 |
Ð |
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80 |
Ð |
(IC = 4.0 Adc, VCE = 5.0 Vdc) |
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DYNAMIC CHARACTERISTICS |
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Output Capacitance |
Cob |
Ð |
100 |
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130 |
pF |
(VCB = 28 Vdc, IE = 0, f = 1.0 MHz) |
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NOTE: |
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(continued) |
1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
REV 7
MOTOROLAMotorola, Inc. 1997RF DEVICE DATA |
MRF316 |
|
1 |
ELECTRICAL CHARACTERISTICS Ð continued (TC = 25°C unless otherwise noted.)
Characteristic |
Symbol |
Min |
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Typ |
Max |
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Unit |
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NARROW BAND FUNCTIONAL TESTS (Figure 1) |
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Common±Emitter Amplifier Power Gain |
GPE |
10 |
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13 |
Ð |
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dB |
(VCC = 28 Vdc, Pout = 80 W, f = 150 MHz) |
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Collector Efficiency |
h |
55 |
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Ð |
Ð |
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% |
(VCC = 28 Vdc, Pout = 80 W, f = 150 MHz) |
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Load Mismatch |
y |
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(VCC = 28 Vdc, Pout = 80 W CW, f = 150 MHz, |
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No Degradation in Output Power |
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VSWR = 30:1 all phase angles) |
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R2 |
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R3 |
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RFC6 |
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+ 28 Vdc |
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C13 |
RFC5 |
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L2 |
C12 |
DUT |
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C1 |
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L1 |
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RF |
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RF |
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C5 |
C6 |
RFC4 |
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OUTPUT |
INPUT |
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C9 |
C10 |
C11 |
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C2 |
C3 |
C4 |
RFC1 |
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C8 |
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RFC2 |
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C7 |
R1 |
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RFC3 |
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C1 Ð 22 pF 100 mil ATC
C2, C3 Ð 24 pF 100 mil ATC
C4, C11 Ð 0.8 ± 20 pF JMC #5501 Johanson
C5 Ð 200 pF 100 mil ATC
C6 Ð 240 pF 100 mil ATC
C7 Ð Dipped Mica 1000 pF
C8 Ð 0.1 mF Erie Red Cap
C9, C10, C12 Ð 30 pF 100 mil ATC C13 Ð 1.0 mF Tantalum
L1 Ð 0.8 ″ , #20 Wire
L2 Ð 1.0 ″ , #20 Wire
RFC1, RFC4 Ð 0.15 mH Molded Coil
RFC2, RFC3 Ð Ferroxcube Bead 56±590±65±3B
RFC5 Ð 2.5 ″ , #20 Wire, 1.5 Turns
RFC6 Ð Ferroxcube VK200±19/4B
R1 Ð 10 W, 1/2 W R2, R3 Ð 10 W, 1.0 W
Figure 1. 150 MHz Test Amplifier
MRF316 |
MOTOROLA RF DEVICE DATA |
2 |
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TYPICAL PERFORMANCE CURVES
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140 |
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VCC = 28 V |
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(WATTS) |
120 |
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100 |
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f = 30 MHz |
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POWER |
80 |
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100 MHz |
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, OUTPUT |
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60 |
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50 MHz |
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150 MHz |
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200 MHz |
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40 |
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out |
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P |
20 |
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0 |
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0.2 |
0.3 |
0.4 0.5 |
0.7 |
1 |
2 |
3 |
4 |
5 |
7 |
10 |
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Pin, INPUT POWER (WATTS) |
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(dB) |
26 |
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Pout = 80 W |
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GAIN |
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22 |
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VCC = 28 V |
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POWER |
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18 |
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EMITTER |
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14 |
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COMMON |
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10 |
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, |
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PE |
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G |
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620 |
60 |
100 |
140 |
180 |
220 |
f, FREQUENCY (MHz)
Figure 2. Output Power versus Input Power |
Figure 3. Power Gain versus Frequency |
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130 |
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Pin = 8 W |
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(WATTS) |
110 |
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6 W |
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4 W |
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POWER |
90 |
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, OUTPUT |
70 |
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2 W |
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out |
50 |
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P |
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f = 100 MHz |
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30 |
16 |
20 |
24 |
28 |
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12 |
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VCC, SUPPLY VOLTAGE (VOLTS) |
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Figure 4. Output Power versus Supply Voltage
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120 |
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Pin = 8 W |
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(WATTS) |
100 |
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6 W |
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4 W |
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POWER |
80 |
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, OUTPUT |
60 |
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2 W |
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out |
40 |
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P |
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f = 150 MHz |
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20 |
16 |
20 |
24 |
28 |
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12 |
VCC, SUPPLY VOLTAGE (VOLTS)
Figure 5. Output Power versus Supply Voltage
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110 |
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(WATTS) |
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Pin = 8 W |
90 |
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6 W |
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4 W |
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POWER |
70 |
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, OUTPUT |
50 |
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2 W |
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out |
30 |
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P |
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f = 200 MHz |
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10 |
16 |
20 |
24 |
28 |
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12 |
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VCC, SUPPLY VOLTAGE (VOLTS) |
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Figure 6. Output Power versus Supply Voltage
MOTOROLA RF DEVICE DATA |
MRF316 |
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3 |
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1.0 |
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0 |
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1.0 |
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2.0 |
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Zin |
100 |
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200 |
2.0 |
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125 |
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3.0 |
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1.0 |
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150 |
3.0 |
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4.0 |
50 |
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175 |
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2.0 |
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f = 30 MHz |
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175 |
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200 |
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150 |
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125 |
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3.0 |
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VCC = 28 V, Pout = 80 W |
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100 |
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4.0 |
f |
Zin |
ZOL* |
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MHz |
OHMS |
OHMS |
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ZOL* |
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5.0 |
30 |
1.2 ± j2.4 |
5.5 ± j6.8 |
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6.0 |
50 |
1.1 ± j2.2 |
4.5 ± j6.0 |
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100 |
0.3 + j0.7 |
2.7 ± j3.5 |
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7.0 |
125 |
0.6 + j1.2 |
2.3 ± j2.6 |
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50 |
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150 |
0.9 + j1.6 |
2.0 ± j1.7 |
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175 |
2.2 + j0.3 |
1.9 ± j1.3 |
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8.0 |
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200 |
0.3 + j0.8 |
2.0 ± j0.9 |
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f = 30 MHz |
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9.0 |
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ZOL* = Conjugate of the optimum load impedance into which the device output operates at a given output power, voltage and frequency.
Figure 7. Series Equivalent Input±Output Impedance
MRF316 |
MOTOROLA RF DEVICE DATA |
4 |
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PACKAGE DIMENSIONS
D |
F |
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4 |
R |
K |
3 |
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1 |
Q |
2 |
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L |
B |
C |
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J |
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E |
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N |
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H |
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A |
U |
CASE 316±01
ISSUE D
NOTES:
1. FLANGE IS ISOLATED IN ALL STYLES.
|
INCHES |
MILLIMETERS |
||
DIM |
MIN |
MAX |
MIN |
MAX |
A |
24.38 |
25.14 |
0.960 |
0.990 |
B |
12.45 |
12.95 |
0.490 |
0.510 |
C |
5.97 |
7.62 |
0.235 |
0.300 |
D |
5.33 |
5.58 |
0.210 |
0.220 |
E |
2.16 |
3.04 |
0.085 |
0.120 |
F |
5.08 |
5.33 |
0.200 |
0.210 |
H |
18.29 |
18.54 |
0.720 |
0.730 |
J |
0.10 |
0.15 |
0.004 |
0.006 |
K |
10.29 |
11.17 |
0.405 |
0.440 |
L |
3.81 |
4.06 |
0.150 |
0.160 |
N |
3.81 |
4.31 |
0.150 |
0.170 |
Q |
2.92 |
3.30 |
0.115 |
0.130 |
R |
3.05 |
3.30 |
0.120 |
0.130 |
U |
11.94 |
12.57 |
0.470 |
0.495 |
STYLE 1:
PIN 1. EMITTER
2.COLLECTOR
3.EMITTER
4.BASE
MOTOROLA RF DEVICE DATA |
MRF316 |
|
5 |