DISCRETE SEMICONDUCTORS
BGY204
UHF amplifier module
Product specification |
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1996 May 21 |
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File under Discrete Semiconductors, SC09 |
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Philips Semiconductors |
Product specification |
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UHF amplifier module |
BGY204 |
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FEATURES
·4.8 V nominal supply voltage
·3.2 W output power
·Easy control of output power by DC voltage.
APPLICATIONS
·Digital cellular radio systems with Time Division Multiple Access (TDMA) operation (GSM systems) in the
880 to 915 MHz frequency range.
DESCRIPTION
The BGY204 is a four-stage UHF amplifier module in a SOT321B package. The module consists of four NPN silicon planar transistor dies mounted together with matching and bias circuit components on a metallized ceramic substrate.
QUICK REFERENCE DATA
RF performance at Tmb = 25 °C.
PINNING - SOT321B
PIN |
DESCRIPTION |
1RF input
2VC
3VS
4RF output
Flange ground
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1 |
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3 |
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4 |
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Top view |
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MSA489 |
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Fig.1 Simplified outline.
MODE OF |
f |
VS |
VC |
PL |
Gp |
h |
ZS; ZL |
OPERATION |
(MHz) |
(V) |
(V) |
(W) |
(dB) |
(%) |
(W) |
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Pulsed; d = 1 : 8 |
880 to 915 |
4.8 |
£3.5 |
3.2 |
³35 |
typ. 45 |
50 |
1996 May 21 |
2 |
Philips Semiconductors |
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Product specification |
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UHF amplifier module |
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BGY204 |
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LIMITING VALUES |
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In accordance with the Absolute Maximum Rating System (IEC 134). |
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SYMBOL |
PARAMETER |
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CONDITIONS |
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MIN. |
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MAX. |
UNIT |
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VS |
DC supply voltage |
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PL = 0 |
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− |
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8 |
V |
VC |
DC control voltage |
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− |
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4.5 |
V |
PD |
input drive power |
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− |
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2 |
mW |
PL |
load power |
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VS ≤ 6.5 V; ZL = 50 Ω |
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− |
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4 |
W |
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Tstg |
storage temperature |
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−40 |
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+100 |
°C |
Tmb |
operating mounting base temperature |
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−30 |
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+100 |
°C |
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CHARACTERISTICS |
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ZS = ZL = 50 Ω; PD = 1 mW; VS = 4.8 V; VC ≤ 3.5 V; f = 880 to 915 MHz; Tmb = 25 °C; δ = 1 : 8; tp = 575 μs; |
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unless otherwise specified. |
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SYMBOL |
PARAMETER |
CONDITIONS |
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MIN. |
TYP. |
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MAX. |
UNIT |
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IQ |
leakage current |
VC = 0.5 V |
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− |
− |
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0.2 |
mA |
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IC |
control current |
adjust VC for PL = 3.2 W |
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− |
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0.5 |
mA |
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PL |
load power |
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3.2 |
− |
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− |
W |
Gp |
power gain |
adjust VC for PL = 3.2 W |
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35 |
− |
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− |
dB |
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η |
efficiency |
adjust VC for PL = 3.2 W |
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40 |
45 |
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− |
% |
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H2 |
second harmonic |
adjust VC for PL = 3.2 W |
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− |
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−40 |
dBc |
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H3 |
third harmonic |
adjust VC for PL = 3.2 W |
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− |
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−40 |
dBc |
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VSWRin |
input VSWR |
adjust VC for PL = 3.2 W |
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− |
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2.5 : 1 |
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stability |
PD = 0.5 to 2 mW; VS = 4 to 6.5 V; |
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− |
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−60 |
dBc |
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VC = 0 to 3.5 V; PL ≤ 3.2 W; |
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VSWR ≤ 6 : 1 through all phases; |
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isolation |
VC = 0.5 V |
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− |
− |
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−36 |
dBm |
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control bandwidth |
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1 |
− |
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− |
MHz |
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Pn |
noise power |
PL = 3.2 W; bandwidth = 30 kHz; |
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− |
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−85 |
dBm |
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20 MHz above transmitter band |
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ruggedness |
VS = 6.5 V; adjust VC for PL = 3.2 W; |
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no degradation |
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VSWR ≤ 10 : 1 through all phases |
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1996 May 21 |
3 |
Philips Semiconductors |
Product specification |
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UHF amplifier module |
BGY204 |
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40 |
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MGD363 |
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handbook, halfpage |
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PL |
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(dBm) |
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20 |
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880 MHz |
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0 |
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915 MHz |
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−20 |
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−40 |
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1.0 |
1.5 |
2.0 |
2.5 |
3.0 |
3.5 |
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VC (V) |
ZS = ZL = 50 Ω; PD = 0 dBm; VS = 4.8 V; Tmb = 25 °C. |
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Fig.2 Load power as a function of control voltage; typical values.
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20 |
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MGD365 |
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handbook, halfpage |
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(%) |
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modulation |
16 |
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amplitude |
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915 MHz |
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12 |
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880 MHz |
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output |
8 |
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4 |
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0 |
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35 |
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5 |
15 |
25 |
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PL (dBm) |
ZS = ZL = 50 Ω; VS = 4.8 V; Tmb = 25 °C; input amplitude modulation = 3%.
Fig.4 Output amplitude modulation as a function of load power; typical values.
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MGD364 |
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PL |
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(dBm) |
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20 |
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915 MHz |
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880 MHz |
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0 |
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−20 |
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−45 |
−35 |
−25 |
−15 |
−5 |
5 |
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PD (dBm) |
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ZS = ZL = 50 Ω; VS = 4.8 V; adjust VC for PL = 3.2 W; Tmb = 25 °C.
Fig.3 Load power as a function of drive power; typical values.
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MGD366 |
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η |
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% |
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915 MHz |
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40 |
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880 MHz |
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30 |
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20 |
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10 |
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0 |
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0 |
1 |
2 |
3 |
4 |
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PL (W) |
ZS = ZL = 50 Ω; VS = 4.8 V; Tmb = 25 °C.
Fig.5 Efficiency as a function of load power; typical values.
1996 May 21 |
4 |
Philips Semiconductors |
Product specification |
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UHF amplifier module |
BGY204 |
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MGD367
5 handbook, halfpage
PL
(W)
4
3
2
1
0
880 |
890 |
900 |
910 |
920 |
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f (MHz) |
ZS = ZL = 50 Ω; PD = 0 dBm; VS = 4.8 V; VC = 3.5 V; Tmb = 25 °C.
Fig.6 Load power as a function of frequency; typical values.
4 |
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MGD368 |
−30 |
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handbook, halfpage |
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VC |
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H2, H3 |
(V) |
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VC |
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(dBc) |
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−40 |
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3 |
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2 |
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H2 |
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−50 |
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H3 |
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1 |
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−60 |
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0 |
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−70 |
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880 |
890 |
900 |
910 |
920 |
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f (MHz) |
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ZS = ZL = 50 Ω; PD = 0 dBm; VS = 4.8 V; PL = 3.2 W; Tmb = 25 °C.
Fig.7 Control voltage and harmonics as functions of frequency; typical values.
8 |
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MGD369 |
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handbook, halfpage |
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PL |
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(W) |
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6 |
VS = 6.5 V |
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4 |
4.8 V |
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4 V |
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2 |
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0 |
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-40 |
0 |
40 |
80 |
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Tmb (oC) |
ZS = ZL = 50 Ω; PD = 0 dBm; VC = 3.5 V; f = 900 MHz. |
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Fig.8 Load power as a function of the mounting base temperature; typical values.
3.5 |
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MGD370 |
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handbook, halfpage |
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VC |
PL = 35 dBm |
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(V) |
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3.0 |
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30 dBm |
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2.5 |
20 dBm |
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2.0 |
10 dBm |
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0 dBm |
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1.5 |
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−40 |
0 |
40 |
Tmb (oC) |
80 |
ZS = ZL = 50 Ω; PD = 0 dBm; VS = 4.8 V; f = 900 MHz. |
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Fig.9 Control voltage as a function of mounting base temperature; typical values.
1996 May 21 |
5 |