Материал: 9342

Внимание! Если размещение файла нарушает Ваши авторские права, то обязательно сообщите нам

DISCRETE SEMICONDUCTORS

BGY204

UHF amplifier module

Product specification

 

1996 May 21

File under Discrete Semiconductors, SC09

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Philips Semiconductors

Product specification

 

 

 

 

UHF amplifier module

BGY204

 

 

 

 

FEATURES

·4.8 V nominal supply voltage

·3.2 W output power

·Easy control of output power by DC voltage.

APPLICATIONS

·Digital cellular radio systems with Time Division Multiple Access (TDMA) operation (GSM systems) in the

880 to 915 MHz frequency range.

DESCRIPTION

The BGY204 is a four-stage UHF amplifier module in a SOT321B package. The module consists of four NPN silicon planar transistor dies mounted together with matching and bias circuit components on a metallized ceramic substrate.

QUICK REFERENCE DATA

RF performance at Tmb = 25 °C.

PINNING - SOT321B

PIN

DESCRIPTION

1RF input

2VC

3VS

4RF output

Flange ground

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1

 

2

 

3

 

4

 

Top view

 

 

 

 

 

MSA489

Fig.1 Simplified outline.

MODE OF

f

VS

VC

PL

Gp

h

ZS; ZL

OPERATION

(MHz)

(V)

(V)

(W)

(dB)

(%)

(W)

 

 

 

 

 

 

 

 

Pulsed; d = 1 : 8

880 to 915

4.8

£3.5

3.2

³35

typ. 45

50

1996 May 21

2

Philips Semiconductors

 

 

 

 

 

 

Product specification

 

 

 

 

 

 

 

 

 

 

 

UHF amplifier module

 

 

 

 

 

 

 

BGY204

 

 

 

 

 

 

 

 

 

 

 

LIMITING VALUES

 

 

 

 

 

 

 

 

 

In accordance with the Absolute Maximum Rating System (IEC 134).

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

SYMBOL

PARAMETER

 

CONDITIONS

 

MIN.

 

MAX.

UNIT

 

 

 

 

 

 

 

 

 

 

 

VS

DC supply voltage

 

PL = 0

 

 

 

 

8

V

VC

DC control voltage

 

 

 

 

 

 

4.5

V

PD

input drive power

 

 

 

 

 

 

2

mW

PL

load power

 

VS 6.5 V; ZL = 50 Ω

 

 

4

W

Tstg

storage temperature

 

 

 

 

 

40

 

+100

°C

Tmb

operating mounting base temperature

 

 

 

 

30

 

+100

°C

CHARACTERISTICS

 

 

 

 

 

 

 

 

 

ZS = ZL = 50 Ω; PD = 1 mW; VS = 4.8 V; VC 3.5 V; f = 880 to 915 MHz; Tmb = 25 °C; δ = 1 : 8; tp = 575 μs;

 

unless otherwise specified.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

SYMBOL

PARAMETER

CONDITIONS

 

MIN.

TYP.

 

MAX.

UNIT

 

 

 

 

 

 

 

 

 

 

IQ

leakage current

VC = 0.5 V

 

 

 

0.2

mA

IC

control current

adjust VC for PL = 3.2 W

 

 

 

0.5

mA

PL

load power

 

 

 

 

3.2

 

W

Gp

power gain

adjust VC for PL = 3.2 W

 

 

35

 

dB

η

efficiency

adjust VC for PL = 3.2 W

 

 

40

45

 

%

H2

second harmonic

adjust VC for PL = 3.2 W

 

 

 

40

dBc

H3

third harmonic

adjust VC for PL = 3.2 W

 

 

 

40

dBc

VSWRin

input VSWR

adjust VC for PL = 3.2 W

 

 

 

2.5 : 1

 

 

stability

PD = 0.5 to 2 mW; VS = 4 to 6.5 V;

 

 

60

dBc

 

 

VC = 0 to 3.5 V; PL 3.2 W;

 

 

 

 

 

 

 

 

VSWR 6 : 1 through all phases;

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

isolation

VC = 0.5 V

 

 

 

36

dBm

 

control bandwidth

 

 

 

 

1

 

MHz

 

 

 

 

 

 

 

 

 

Pn

noise power

PL = 3.2 W; bandwidth = 30 kHz;

 

 

85

dBm

 

 

20 MHz above transmitter band

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ruggedness

VS = 6.5 V; adjust VC for PL = 3.2 W;

 

no degradation

 

 

 

VSWR 10 : 1 through all phases

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1996 May 21

3

Philips Semiconductors

Product specification

 

 

UHF amplifier module

BGY204

 

 

40

 

 

 

 

MGD363

 

 

 

 

 

handbook, halfpage

 

 

 

 

 

PL

 

 

 

 

 

(dBm)

 

 

 

 

 

20

 

 

 

 

 

 

 

880 MHz

 

 

 

0

 

 

 

 

 

 

 

 

915 MHz

 

 

20

 

 

 

 

 

40

 

 

 

 

 

1.0

1.5

2.0

2.5

3.0

3.5

 

 

 

 

 

VC (V)

ZS = ZL = 50 Ω; PD = 0 dBm; VS = 4.8 V; Tmb = 25 °C.

Fig.2 Load power as a function of control voltage; typical values.

 

20

 

 

MGD365

 

 

 

 

handbook, halfpage

 

 

 

(%)

 

 

 

 

modulation

16

 

 

 

 

 

 

 

amplitude

 

915 MHz

 

 

12

 

 

 

880 MHz

 

 

 

 

 

 

 

output

8

 

 

 

 

 

 

 

 

4

 

 

 

 

0

 

 

35

 

5

15

25

 

 

 

 

PL (dBm)

ZS = ZL = 50 Ω; VS = 4.8 V; Tmb = 25 °C; input amplitude modulation = 3%.

Fig.4 Output amplitude modulation as a function of load power; typical values.

40

 

 

 

 

MGD364

 

 

 

 

 

PL

 

 

 

 

 

(dBm)

 

 

 

 

 

20

 

 

 

 

 

 

 

915 MHz

 

 

 

 

 

880 MHz

 

 

0

 

 

 

 

 

20

 

 

 

 

 

45

35

25

15

5

5

 

 

 

 

PD (dBm)

ZS = ZL = 50 Ω; VS = 4.8 V; adjust VC for PL = 3.2 W; Tmb = 25 °C.

Fig.3 Load power as a function of drive power; typical values.

50

 

 

 

MGD366

 

 

 

 

η

 

 

 

 

%

 

915 MHz

 

 

 

 

 

 

40

 

 

880 MHz

 

 

 

 

 

30

 

 

 

 

20

 

 

 

 

10

 

 

 

 

0

 

 

 

 

0

1

2

3

4

 

 

 

 

PL (W)

ZS = ZL = 50 Ω; VS = 4.8 V; Tmb = 25 °C.

Fig.5 Efficiency as a function of load power; typical values.

1996 May 21

4

Philips Semiconductors

Product specification

 

 

UHF amplifier module

BGY204

 

 

MGD367

5 handbook, halfpage

PL

(W)

4

3

2

1

0

880

890

900

910

920

 

 

 

 

f (MHz)

ZS = ZL = 50 Ω; PD = 0 dBm; VS = 4.8 V; VC = 3.5 V; Tmb = 25 °C.

Fig.6 Load power as a function of frequency; typical values.

4

 

 

 

 

 

 

 

MGD368

30

handbook, halfpage

 

 

 

 

 

 

 

 

 

VC

 

 

 

 

 

 

 

 

 

H2, H3

(V)

 

 

 

 

VC

 

 

 

(dBc)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

40

3

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2

 

 

 

 

 

H2

 

 

 

50

 

 

 

 

 

 

H3

 

 

 

 

1

 

 

 

 

 

 

 

 

 

60

 

 

 

 

 

 

 

 

 

0

 

 

 

 

 

 

 

 

 

70

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

880

890

900

910

920

 

 

 

 

 

 

 

 

f (MHz)

ZS = ZL = 50 Ω; PD = 0 dBm; VS = 4.8 V; PL = 3.2 W; Tmb = 25 °C.

Fig.7 Control voltage and harmonics as functions of frequency; typical values.

8

 

 

MGD369

 

 

 

handbook, halfpage

 

 

 

PL

 

 

 

(W)

 

 

 

6

VS = 6.5 V

 

 

 

 

 

4

4.8 V

 

 

 

 

 

 

4 V

 

 

2

 

 

 

0

 

 

 

-40

0

40

80

 

 

 

Tmb (oC)

ZS = ZL = 50 Ω; PD = 0 dBm; VC = 3.5 V; f = 900 MHz.

Fig.8 Load power as a function of the mounting base temperature; typical values.

3.5

 

 

MGD370

 

 

 

 

handbook, halfpage

 

 

 

 

VC

PL = 35 dBm

 

 

 

(V)

 

 

 

 

3.0

 

 

 

 

 

30 dBm

 

 

 

2.5

20 dBm

 

 

 

2.0

10 dBm

 

 

 

 

0 dBm

 

 

 

1.5

 

 

 

 

40

0

40

Tmb (oC)

80

ZS = ZL = 50 Ω; PD = 0 dBm; VS = 4.8 V; f = 900 MHz.

 

Fig.9 Control voltage as a function of mounting base temperature; typical values.

1996 May 21

5

Источник: https://studfile.net/preview/16504235/