Материал: 9857
DISCRETE SEMICONDUCTORS
k, halfpage
M3D087
PZTM1101
NPN transistor/Schottky-diode module
Product specification |
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1996 May 09 |
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File under Discrete Semiconductors, SC01 |
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Philips Semiconductors |
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Product specification |
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NPN transistor/Schottky-diode module |
PZTM1101 |
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FEATURES |
DESCRIPTION |
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∙Low output capacitance
∙Fast switching time
∙Integrated Schottky protection diode.
APPLICATIONS
∙High-speed switching for industrial applications.
PINNING
PIN |
DESCRIPTION |
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1 |
anode Schottky |
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2 |
base |
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3 |
emitter |
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4 |
collector, cathode Schottky |
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LIMITING VALUES
Combination of an NPN transistor and a Schottky barrier diode in a plastic SOT223 package. PNP complement: PZTM1102.
handbook, halfpage |
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Top view |
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MAM236 |
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Marking code: TM1101.
Fig.1 Simplified outline (SOT223) and symbol.
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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NPN transistor |
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VCBO |
collector-base voltage |
open emitter |
− |
60 |
V |
VCES |
collector-emitter voltage |
VBE = 0 |
− |
40 |
V |
VEBO |
emitter-base voltage |
open collector |
− |
6 |
V |
IC |
collector current (DC) |
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− |
200 |
mA |
Schottky barrier diode |
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VR |
continuous reverse voltage |
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40 |
V |
IF |
forward current (DC) |
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1 |
A |
IF(AV) |
average forward current |
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1 |
A |
Tj |
junction temperature |
reverse current applied |
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125 |
°C |
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forward current applied |
− |
150 |
°C |
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Combined device |
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Ptot |
total power dissipation |
up to Tamb = 25 °C |
− |
1.2 |
W |
Tamb |
operating ambient temperature |
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−55 |
+150 |
°C |
Tstg |
storage temperature |
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−55 |
+150 |
°C |
Tj |
junction temperature |
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− |
150 |
°C |
1996 May 09 |
2 |
Philips Semiconductors |
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Product specification |
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NPN transistor/Schottky-diode module |
PZTM1101 |
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ELECTRICAL CHARACTERISTICS |
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Tamb = 25 °C unless otherwise specified. |
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SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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NPN transistor |
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V(BR)CBO |
collector-base breakdown voltage |
open emitter; IC = 10 μA; IE = 0; |
60 |
− |
V |
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Tamb = −55 to +150 °C; note 1 |
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V(BR)CES |
collector-emitter breakdown voltage |
open base; IC = 1 mA; VBE = 0; |
40 |
− |
V |
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Tamb = −55 to +150 °C; note 1 |
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V(BR)EBO |
emitter-base breakdown voltage |
open collector; IE = 10 μA; IC = 0; |
6 |
− |
V |
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Tamb = −55 to +150 °C; note 1 |
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ICES |
collector-emitter cut-off current |
VCE = 20 V; VBE = 0 |
− |
100 |
nA |
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VCE = 20 V; VBE = 0; Tamb = −55 to +150 °C |
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50 |
μA |
IEBO |
emitter-base cut-off current |
VEB = 6 V; IC = 0 |
− |
50 |
nA |
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VEB = 6 V; IC = 0; Tamb = −55 to +150 °C |
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10 |
μA |
VCEsat |
collector-emitter saturation voltage |
note 1 |
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IC = 10 mA; IB = 1 mA |
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200 |
mV |
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IC = 50 mA; IB = 3.2 mA |
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300 |
mV |
VCEsat |
collector-emitter saturation voltage |
Tamb = −55 to +150 °C; note 1 |
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IC = 10 mA; IB = 1 mA |
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250 |
mV |
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IC = 50 mA; IB = 3.2 mA |
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350 |
mV |
VBEsat |
base-emitter saturation voltage |
note 1 |
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IC = 10 mA; IB = 1 mA |
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850 |
mV |
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IC = 50 mA; IB = 5 mA |
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950 |
mV |
VBEsat |
base-emitter saturation voltage |
Tamb = −55 to +150 °C; note 1 |
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IC = 10 mA; IB = 1 mA |
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1000 |
mV |
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IC = 50 mA; IB = 5 mA |
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1100 |
mV |
Cob |
output capacitance |
IE = ie = 0; VCB = 5 V; f = 1 MHz |
− |
4 |
pF |
Cib |
input capacitance |
IC = ic = 0; VEB = 0.5 V; f = 1 MHz |
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8 |
pF |
fT |
transition frequency |
IC = 10 mA; VCE = 20 V; f = 100 MHz |
300 |
− |
MHz |
hFE |
DC current gain |
VCE = 1 V; note 1 |
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IC = 0.1 mA |
40 |
− |
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IC = 1 mA |
70 |
− |
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IC = 10 mA |
100 |
300 |
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IC = 100 mA |
30 |
− |
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hFE |
DC current gain |
VCE = 1 V; Tamb = −55 to +150 °C; note 1 |
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IC = 10 mA |
60 |
500 |
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IC = 100 mA |
15 |
− |
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SWITCHING TIMES (see Figs 2 and 3) |
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td |
delay time |
VCC = 5 V |
1 |
5 |
ns |
tr |
rise time |
IC = 50 mA |
16 |
31 |
ns |
ts |
storage time |
Vi = 0 to 5 V |
110 |
310 |
ns |
tf |
fall time |
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70 |
100 |
ns |
1996 May 09 |
3 |
Philips Semiconductors |
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Product specification |
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NPN transistor/Schottky-diode module |
PZTM1101 |
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SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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Schottky barrier diode |
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VF |
forward voltage |
IF = 100 mA; note 1 |
− |
330 |
mV |
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IF = 100 mA; Tamb = −55 to +150 °C; note 1 |
− |
400 |
mV |
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IF = 1 A; note 1 |
− |
500 |
mV |
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IF = 1 A; Tamb = −55 to +150 °C; note 1 |
− |
560 |
mV |
IR |
reverse current |
VR = 40 V; note 1 |
− |
300 |
μA |
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VR = 40 V; Tj = 125 °C; |
− |
35(2) |
mA |
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Tamb = −55 to +150 °C; note 1 |
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IR |
reverse current |
VR = 10 V; note 1 |
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40 |
μA |
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VR = 10 V; Tj = 125 °C; |
− |
15(2) |
mA |
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Tamb = −55 to +150 °C; note 1 |
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Cj |
junction capacitance |
VR = 0 V; f = 1 MHz |
− |
250 |
pF |
Notes
1.Measured under pulsed conditions: tp ≤ 300 μs; δ ≤ 0.01.
2.Limiting value for Tj = 125 °C; Tj = 150 °C with reverse current applied is not allowed as this may cause thermal runaway leading to thermal destruction of the diode. A peak junction temperature of Tj = 150 °C is only allowed with forward voltage applied.
THERMAL CHARACTERISTICS
SYMBOL |
PARAMETER |
CONDITIONS |
VALUE |
UNIT |
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Rth j-a |
thermal resistance from junction to ambient (combined device) |
note 1 |
100 |
K/W |
Note |
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1. Refer to SOT223 standard mounting conditions.
1996 May 09 |
4 |
Philips Semiconductors |
Product specification |
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NPN transistor/Schottky-diode module |
PZTM1101 |
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GRAPHICAL DATA |
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VCC = 5 V DC |
handbook, halfpage |
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5 V |
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handbook, halfpage |
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INPUT |
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90 Ω |
Vi |
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0 V |
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(1%) |
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tp |
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5 V |
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Vi |
825 Ω (1%) |
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Vo (pin 4) |
Vo |
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10% |
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90% |
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0 V |
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DUT |
OUTPUT |
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7.5 kΩ |
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5.23 Ω |
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90% |
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10% |
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(5%) |
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(1%) |
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td |
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tf |
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MBH220 |
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tr |
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ts |
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ton |
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toff |
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MBH221 |
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tr < 5 ns (10% to 90%); tp = 1 μs; δ = 0.02; Zi = 50 Ω. ton = td + tr; toff = ts + tf.
Fig.2 Switching times test circuit. |
Fig.3 Input and output waveforms. |
1996 May 09 |
5 |