Материал: HFA3127_
S E M I C O N D U C T O R
February 1995
HFA3127/883
Ultra High Frequency Transistor Array
Features |
Description |
• This Circuit is Processed in Accordance to MIL-STD- 883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1.
• NPN Transistor (fT). . . . . . . . . . . . . . . . . . . . .8GHz (Typ)
• NPN Current Gain . . . . . . . . . . . . . . . . . . . . . . . 40 (Min)
• NPN Early Voltage (VA) . . . . . . . . . . . . . . . . . . . 20 (Min)
• Noise Figure (50Ω) at 1.0GHz . . . . . . . . . . . 3.5dB (Typ)
• Collector-to-Collector Leakage. . . . . . . . . . . <1pA (Typ)
•Complete Isolation Between Transistors
•Pin Compatible with Industry Standard 3XXX Series
The HFA3127/883 is an Ultra High Frequency Transistor Array fabricated on the Harris Semiconductor complementary bipolar UHF-1 process. This array consists of five dielectrically isolated transistors on a common monolithic substrate. The high fT (8GHz) and low noise figure (3.5dB) of these transistors make them ideal for high frequency amplifier and mixer applications.
The HFA3127/883 is an all-NPN array. Access is provided to each of the terminals of the individual transistors for maximum application flexibility. The monolithic construction of the array provides close electrical and thermal matching of the five transistors.
SMD 5962-9474901MEA version is also available from Harris Semiconductor.
Applications |
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VHF/UHF Amplifiers |
Ordering Information |
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VHF/UHF Mixers |
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PART NUMBER |
TEMPERATURE |
PACKAGE |
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IF Converters |
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HFA3127MJ/883 |
-55oC to +125oC |
16 Lead CerDIP |
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Synchronous Detectors |
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Pinout
HFA3127/883
(CERDIP)
TOP VIEW
1 |
16 |
2 |
Q1 |
15 |
3 |
14 |
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4 |
Q2 |
13 |
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NC |
5 |
Q5 |
12 |
6 |
11 |
7 |
10 |
Q3 |
Q4 |
8 |
9 |
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper I.C. Handling Procedures. |
File Number 3967 |
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Copyright © Harris Corporation 1995 |
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1 |
Spec Number 511120 |
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Specifications HFA3127/883
Absolute Maximum Ratings |
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Thermal Information |
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Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . |
. . . . . . . . . 8.0V |
Thermal Resistance |
θJA |
θJC |
Collector to Base Voltage . . . . . . . . . . . . . . . . . . . . . . |
. . . . . . . 12.0V |
CerDIP Package . . . . . . . . . . . . . . . . . . . |
80oC/W |
24oC/W |
Emitter to Base Voltage |
5.5V |
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Maximum Package Power Dissipation at +75° |
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Collector Current at 100% Duty Cycle, 175oC TJ . . . . |
. . . . . 11.3mA |
CerDIP Package . . . . . . . . . . . . . . . . . . . . |
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. . . . 1.25W |
Storage Temperature Range . . . . . . . . . . . . . . . . . . |
-65oC to 150oC |
Derating Factor Above +75oC |
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Junction Temperature (DIE) . . . . . . . . . . . . . . . . . . . . |
. . . . . +175oC |
CerDIP Package . . . . . . . . . . . . . . . . . . . . |
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12.5mW/oC |
Lead Temperature (Soldering 10s) . . . . . . . . . . . . . . . |
. . . . . +300oC |
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ESD Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
. . . . . <2000V |
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CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
Operating Temperature Range . . . . . . . . . . . . . . . . -55oC to +125oC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
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LIMITS |
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GROUP A |
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PARAMETER |
SYMBOL |
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CONDITIONS |
SUBGROUPS |
TEMPERATURE |
MIN |
MAX |
UNITS |
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Collector-to-Base |
V(BR)CBO |
IC = 100μA, IE = 0 |
1 |
+25oC |
12 |
- |
V |
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Breakdown Voltage |
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2, 3 |
+125oC to -55oC |
12 |
- |
V |
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Collector-to-Emitter |
V |
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I |
C |
= 100μA, I |
B |
= 0 |
1 |
+25oC |
8 |
- |
V |
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Breakdown Voltage |
(BR)CEO |
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2, 3 |
+125oC to -55oC |
8 |
- |
V |
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Collector-to-Emitter |
V |
(BR)CES |
I = 100μA, Base Shorted |
1 |
+25oC |
10 |
- |
V |
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C |
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Breakdown Voltage |
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tp Emitter |
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2, 3 |
+125oC to -55oC |
10 |
- |
V |
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Emitter-to-Base Breakdown |
V(BR)EBO |
IE = 10μA, IC = 0 |
1 |
+25oC |
5.5 |
- |
V |
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Voltage |
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2, 3 |
+125oC to -55oC |
5.5 |
- |
V |
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Collector-Cutoff Current |
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I |
V |
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= 6V, I |
B |
= 0 |
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1 |
+25oC |
- |
100 |
nA |
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CEO |
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CE |
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2, 3 |
+125oC to -55oC |
- |
100 |
nA |
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Collector-Cutoff Current |
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I |
V |
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= 8V, I |
E |
= 0 |
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1 |
+25oC |
- |
10 |
nA |
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CBO |
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CB |
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2, 3 |
+125oC to -55oC |
- |
10 |
nA |
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Collector-to-Emitter |
VCE(SAT) |
IC = 10mA, IB = 1mA |
1 |
+25oC |
- |
0.5 |
V |
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Saturation Voltage |
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2, 3 |
+125oC to -55oC |
- |
0.5 |
V |
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Base-to-Emitter Voltage |
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V |
I |
C |
= 10mA |
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1 |
+25oC |
- |
0.95 |
V |
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BE |
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2, 3 |
+125oC to -55oC |
- |
1.05 |
V |
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DC Forward Current |
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hFE |
IC = 10mA, VCE = 2V |
1 |
+25oC |
40 |
- |
- |
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Transfer Ratio |
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2, 3 |
+125oC to -55oC |
20 |
- |
- |
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Early Voltage |
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V |
I |
C |
= 10mA, V |
CE |
= 3.5V |
1 |
+25oC |
20 |
- |
V |
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A |
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2, 3 |
+125oC to -55oC |
20 |
- |
V |
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Spec Number 511120
2
Specifications HFA3127/883
TABLE 2. ELECTRICAL PERFORMANCE CHARACTERISTICS
Table 2 Intentionally Left Blank.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
Table 3 Intentionally Left Blank.
TABLE 4. ELECTRICAL TEST REQUIREMENTS
MIL-STD-883 TEST REQUIREMENTS |
SUBGROUPS (SEE TABLE 1) |
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Interim Electrical Parameters (Pre Burn-In) |
1 |
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Final Electrical Test Parameters |
1 (Note 1), 2, 3 |
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Group A Test Requirements |
1, 2, 3 |
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Groups C and D Endpoints |
1 |
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NOTE:
1. PDA applies to Subgroup 1 only.
Spec Number 511120
3
HFA3127/883
Test Circuits (Applies to Table 1)
100μA |
100μA |
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100μA |
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V |
V |
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10μA |
V |
BVCBO |
BVCEO |
BVCES |
BVEBO |
READ 10mA
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10mA |
A |
A |
A |
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6V |
8V |
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V |
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2V |
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1mA |
V |
ADJ. |
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ICEO |
ICBO |
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VCE(SAT) |
VBE |
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READ 10mA |
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MONITOR |
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A |
MONITOR |
A |
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V |
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R |
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A |
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2V |
ADJ. |
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ADJ. |
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ADJUST |
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HFE |
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VA |
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Burn-In Circuit
100 ±5%
10.5V ± 0.5V
0.01μF
5.5V ± 0.5V
0.01μF |
16 |
1 |
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2 |
Q1 |
15 |
1K ±5% |
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3 |
Q2 |
14 |
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1K ±5% |
4 |
13 |
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NC |
5 |
Q5 |
12 |
1K ±5% |
6 |
11 |
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7 |
10 |
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1K ±5% |
Q3 |
Q4 |
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8 |
9 |
1K |
±5% |
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Spec Number 511120
4
HFA3127/883
Die Characteristics
DIE DIMENSIONS:
52 x 52.8 x 15 1mils
1320μm x 1340μm x 381μm ± 25.4μm
METALIZATION:
Type: Metal 1: AlCu(2%)/TiW
Thickness: Metal 1: 8kÅ ± 0.5kÅ
Type: Metal 2: AlCu(2%)
Thickness: Metal 2: 16kÅ ± 0.8kÅ
GLASSIVATION:
Type: Nitride
Thickness: 4kÅ ± 0.5kÅ
WORST CASE CURRENT DENSITY:
3.04 x 105A/cm2
TRANSISTOR COUNT: 5
SUBSTRATE POTENTIAL: Floating
Metallization Mask Layout
Pad numbers correspond to the 16 pin DIP pinout.
HFA3127/883
2 |
1 |
16 |
15 |
3 |
14 |
4 |
13 |
5 |
12 |
6 |
11 |
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8 |
9 |
10 |
Spec Number 511120
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