Материал: HGTD3N60
S E M I C O N D U C T O R
June 1996
HGTD3N60C3,
HGTD3N60C3S
6A, 600V, UFS Series N-Channel IGBT
Features
•6A, 600V at TC = +25oC
•600V Switching SOA Capability
•Typical Fall Time - 130ns at TJ = +150oC
•Short Circuit Rating
•Low Conduction Loss
Description
The HGTD3N60C3 and HGTD3N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC.
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors
PACKAGING AVAILABILITY
PART NUMBER |
PACKAGE |
BRAND |
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HGTD3N60C3 |
TO-251AA |
G3N60C |
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HGTD3N60C3S |
TO-252AA |
G3N60C |
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NOTE: When ordering, use the entire part number.
Add the suffix 9A to obtain the TO-252AA variant in Tape and Reel, i.e. HGTD3N60C3S9A.
Formerly developmental type TA49113.
Packaging
JEDEC TO-251AA
EMITTER
COLLECTOR
GATE
COLLECTOR (FLANGE)
JEDEC TO-252AA
COLLECTOR
(FLANGE)
GATE
EMITTER 
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
G
E
Absolute Maximum Ratings T = +25oC |
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A |
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HGTD3N60C3 |
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HGTD3N60C3S |
UNITS |
Collector-Emitter Voltage . . |
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. . BVCES |
600 |
V |
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Collector Current Continuous |
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At TC = +25oC . . . . . . . . |
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IC25 |
6 |
A |
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At T = +110oC . . . . . . . |
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I |
C110 |
3 |
A |
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C |
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Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
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ICM |
24 |
A |
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Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
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VGES |
±20 |
V |
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Gate-Emitter Voltage Pulsed . |
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VGEM |
±30 |
V |
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Switching Safe Operating Area at TJ = +150oC, Figure 14 . . . . . . . . . . . . . . . . . . . . . |
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SSOA |
18A at 480V |
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Power Dissipation Total at T |
C |
= +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
. . |
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P |
33 |
W |
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D |
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Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
. . |
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. . . |
0.27 |
W/oC |
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Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
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. EARV |
100 |
mJ |
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Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . |
T |
, T |
STG |
-40 to +150 |
oC |
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J |
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oC |
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Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
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.TL |
260 |
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Short Circuit Withstand Time (Note 2) at VGE = 10V, Figure 6 . . . . . . . . . . . . . . . . . . |
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tSC |
8 |
μs |
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NOTE:
1.Repetitive Rating: Pulse width limited by maximum junction temperature.
2.VCE(PK) = 360V, TJ = +125oC, RGE = 82Ω.
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD handling procedures. |
File Number 4139.1 |
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Copyright © Harris Corporation 1996 |
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Specifications HGTD3N60C3, HGTD3N60C3S
Electrical Specifications TC = +25oC, Unless Otherwise Specified
PARAMETERS |
SYMBOL |
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TEST CONDITIONS |
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TYP |
MAX |
UNITS |
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Collector-Emitter Breakdown Voltage |
BVCES |
IC = 250μA, VGE = 0V |
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600 |
- |
- |
V |
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Emitter-Collector Breakdown Voltage |
BVECS |
IC = 3mA, VGE = 0V |
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16 |
30 |
- |
V |
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Collector-Emitter Leakage Current |
ICES |
VCE = BVCES |
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TC = +25oC |
- |
- |
250 |
μA |
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VCE = BVCES |
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TC = +150oC |
- |
- |
2.0 |
mA |
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Collector-Emitter Saturation Voltage |
VCE(SAT) |
IC = IC110, |
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TC = +25oC |
- |
1.65 |
2.0 |
V |
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VGE = 15V |
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TC = +150oC |
- |
1.85 |
2.2 |
V |
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Gate-Emitter Threshold Voltage |
V |
I |
C |
= 250μA, |
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T |
C |
= +25oC |
3.0 |
5.5 |
6.0 |
V |
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GE(TH) |
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VCE = VGE |
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Gate-Emitter Leakage Current |
IGES |
VGE = ±25V |
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- |
- |
±250 |
nA |
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Switching SOA |
SSOA |
TJ = +150oC |
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VCE(PK) = 480V |
18 |
- |
- |
A |
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RG = 82Ω |
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VCE(PK) = 600V |
2 |
- |
- |
A |
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V |
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= 15V |
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GE |
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L = 1mH |
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Gate-Emitter Plateau Voltage |
VGEP |
IC = IC110, VCE = 0.5 BVCES |
- |
8.3 |
- |
V |
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On-State Gate Charge |
QG(ON) |
IC = IC110, |
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VGE = 15V |
- |
10.8 |
13.5 |
nC |
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VCE = 0.5 BVCES |
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VGE = 20V |
- |
13.8 |
17.3 |
nC |
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Current Turn-On Delay Time |
tD(ON)I |
TJ = 150oC |
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- |
5 |
- |
ns |
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ICE = IC110 |
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Current Rise Time |
tRI |
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- |
10 |
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ns |
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V |
CE(PK) |
= 0.8 BV |
CES |
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VGE = 15V |
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Current Turn-Off Delay Time |
tD(OFF)I |
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- |
325 |
400 |
ns |
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RG = 82Ω |
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L = 1mH |
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Current Fall Time |
tFI |
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- |
130 |
275 |
ns |
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Turn-On Energy |
EON |
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- |
85 |
- |
μJ |
Turn-Off Energy (Note 1) |
EOFF |
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- |
245 |
- |
μJ |
Thermal Resistance |
R |
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- |
- |
3.75 |
oC/W |
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θJC |
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NOTE: |
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1.Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). The HGTD3N60C3 and HGTD3N60C3S were tested per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include diode losses.
HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073 |
4,417,385 |
4,430,792 |
4,443,931 |
4,466,176 |
4,516,143 |
4,532,534 |
4,567,641 |
4,587,713 |
4,598,461 |
4,605,948 |
4,618,872 |
4,620,211 |
4,631,564 |
4,639,754 |
4,639,762 |
4,641,162 |
4,644,637 |
4,682,195 |
4,684,413 |
4,694,313 |
4,717,679 |
4,743,952 |
4,783,690 |
4,794,432 |
4,801,986 |
4,803,533 |
4,809,045 |
4,809,047 |
4,810,665 |
4,823,176 |
4,837,606 |
4,860,080 |
4,883,767 |
4,888,627 |
4,890,143 |
4,901,127 |
4,904,609 |
4,933,740 |
4,963,951 |
2
HGTD3N60C3, HGTD3N60C3S
Typical Performance Curves
(A) |
20 |
DUTY CYCLE <0.5%, VCE = 10V |
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18 |
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CURRENT |
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μ |
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14 |
PULSE DURATION = 250 s |
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EMITTER- |
16 |
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12 |
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10 |
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COLLECTOR, |
8 |
TC = +150oC |
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2 |
TC = +25oC |
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6 |
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4 |
TC = -40oC |
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CE |
0 |
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I |
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4 |
6 |
8 |
10 |
12 |
14 |
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VGE, GATE-TO-EMITTER VOLTAGE (V) |
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FIGURE 1. TRANSFER CHARACTERISTICS
ICE, COLLECTOR-EMITTER CURRENT (A)
PULSE DURATION = 250μs, DUTY CYCLE <0.5%, TC = +25oC
20
VGE = 15V |
12V |
18 |
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16 |
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14 |
10V |
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12 |
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10 |
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8 |
9.0V |
6 |
8.5V |
4 |
8.0V |
2 |
7.5V |
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0 |
7.0V |
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0 |
2 |
4 |
6 |
8 |
10 |
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VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) |
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FIGURE 2. SATURATION CHARACTERISTICS
ICE, COLLECTOR-EMITTER CURRENT (A)
20 |
PULSE DURATION = 250μs |
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18 |
DUTY CYCLE <0.5%, VGE = 10V |
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16 |
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14 |
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12 |
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10 |
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TC = -40oC |
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8 |
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TC = +150oC |
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6 |
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TC = +25oC |
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4 |
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2 |
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0 |
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0 |
1 |
2 |
3 |
4 |
5 |
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 3. COLLECTOR-EMITTER ON-STATE VOLTAGE
(A) |
20 |
PULSE DURATION = 250μs |
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CURRENT |
18 |
DUTY CYCLE <0.5%, VGE = 15V |
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14 |
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T = -40oC |
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16 |
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C |
TC = +25oC |
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EMITTER |
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12 |
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T |
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= +150oC |
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10 |
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C |
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8 |
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COLLECTOR, |
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6 |
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4 |
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CE |
2 |
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I |
0 |
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1 |
2 |
3 |
4 |
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5 |
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0 |
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VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 4. COLLECTOR-EMITTER ON-STATE VOLTAGE
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7 |
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(A) |
VGE = 15V |
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6 |
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CURRENT |
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5 |
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COLLECTOR |
4 |
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3 |
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, DC |
2 |
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1 |
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CE |
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I |
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0 |
+50 |
+75 |
+100 |
+125 |
+150 |
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+25 |
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TC, CASE TEMPERATURE (oC)
FIGURE 5. MAXIMUM DC COLLECTOR CURRENT AS A FUNCTION OF CASE TEMPERATURE
tSC, SHORT CIRCUIT WITHSTAND TIME (μS)
14
12
10
8
6
4
2
0
VCE = 360V, RGE = 82Ω, TJ = +125oC
tSC
ISC
10 |
11 |
12 |
13 |
14 |
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VGE, GATE-TO-EMITTER VOLTAGE (V) |
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FIGURE 6. SHORT CIRCUIT WITHSTAND TIME
70 |
(A) |
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60 |
CURRENT |
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50 |
CIRCUIT |
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40 |
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30 |
SHORT |
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20 |
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10 |
PEAK |
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0 |
SC |
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15 |
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3
HGTD3N60C3, HGTD3N60C3S
Typical Performance Curves (Continued)
20 |
TJ = +150oC, RG = 82Ω, L = 1mH, VCE(PK) = 480V |
500 |
T |
J |
= +150oC, R |
G |
= 82Ω, L = 1mH, V |
= 480V |
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TIMEDELAYON-TURN(ns) |
TIMEDELAYOFF-TURN(ns) |
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CE(PK) |
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400 |
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10 |
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VGE = 10V |
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VGE = 15V |
300 |
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VGE = 15V |
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, |
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, |
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D(ON)I |
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D(OFF)I |
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VGE = 10V |
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t |
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t |
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3 |
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5 |
6 |
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200 |
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1 |
2 |
3 |
4 |
7 |
8 |
1 |
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3 |
4 |
5 |
6 |
7 |
8 |
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ICE, COLLECTOR-EMITTER CURRENT (A) |
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ICE, COLLECTOR-EMITTER CURRENT (A) |
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FIGURE 7. TURN-ON DELAY TIME AS A FUNCTION OF |
FIGURE 8. TURN-OFF DELAY TIME AS A FUNCTION OF |
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COLLECTOR-EMITTER CURRENT |
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COLLECTOR-EMITTER CURRENT |
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80 
TJ = +150oC, RG = 82Ω, L = 1mH, VCE(PK) = 480V 
(ns) |
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VGE = 10V |
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-ON RISE TIME |
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TURN |
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VGE = 15V |
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, |
10 |
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RI |
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t |
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5 |
2 |
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4 |
5 |
6 |
7 |
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1 |
ICE, COLLECTOR-EMITTER CURRENT (A)
FIGURE 9. TURN-ON RISE TIME AS A FUNCTION OF COLLECTOR-EMITTER CURRENT
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300 |
= +150oC, R |
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= 82Ω, L = 1mH, V |
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= 480V |
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CE(PK) |
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J |
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(ns) |
200 |
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TIME |
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VGE = 10V or 15V |
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FALL |
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FI |
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t |
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100 |
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ICE, COLLECTOR-EMITTER CURRENT (A)
FIGURE 10. TURN-OFF FALL TIME AS A FUNCTION OF COLLECTOR-EMITTER CURRENT
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0.5 |
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0.8 |
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(mJ) |
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TJ = +150oC, RG = 82Ω, L = 1mH, VCE(PK) = 480V |
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(mJ) |
TJ = +150oC, RG = 82Ω, L = 1mH, VCE(PK) = 480V |
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0.7 |
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LOSSENERGYON-TURN |
0.4 |
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LOSSENERGYOFF-TURN |
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0.6 |
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0.3 |
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VGE = 10V |
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VGE = 10V or 15V |
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VGE |
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= 15V |
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0.2 |
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, |
0.1 |
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ON |
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OFF |
0.1 |
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ICE, COLLECTOR-EMITTER CURRENT (A) |
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ICE, COLLECTOR-EMITTER CURRENT (A) |
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FIGURE 11. TURN-ON ENERGY LOSS AS A FUNCTION OF |
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FIGURE 12. TURN-OFF ENERGY LOSS AS A FUNCTION OF |
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COLLECTOR-EMITTER CURRENT |
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COLLECTOR-EMITTER CURRENT |
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4
HGTD3N60C3, HGTD3N60C3S
Typical Performance Curves (Continued)
(kHz) |
200 |
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TJ = +150oC, TC = +75oC |
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RG = 82Ω, L = 1mH |
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FREQUENCY |
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100 |
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OPERATING |
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PC = CONDUCTION DISSIPATION |
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VGE = 15V |
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fMAX1 = 0.05/(tD(OFF)I + tD(ON)I) |
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fMAX2 = (PD - PC)/(EON + EOFF) |
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PD = ALLOWABLE DISSIPATION |
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, |
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(DUTY FACTOR = 50%) |
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VGE = 10V |
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MAX |
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RθJC = 3.75 |
o |
C/W |
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f |
10 |
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1 |
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2 |
3 |
4 |
5 |
6 |
ICE, COLLECTOR-EMITTER CURRENT (A)
FIGURE 13. OPERATING FREQUENCY AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
(A) |
20 |
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TJ = +150oC, VGE = 15V, RG = 82Ω, L = 1mH |
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18 |
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CURRENT |
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14 |
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EMITTER- |
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COLLECTOR, |
10 |
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2 |
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CE |
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I |
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0 |
100 |
200 |
300 |
400 |
500 |
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VCE(PK), COLLECTOR-TO-EMITTER VOLTAGE (V) |
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FIGURE 14. MINIMUM SWITCHING SAFE OPERATING AREA
C, CAPACITANCE (pF)
500 |
FREQUENCY = 1MHz |
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400 |
CIES |
300 |
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200 |
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100 |
COES |
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CRES |
0 |
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0 |
5 |
10 |
15 |
20 |
25 |
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VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) |
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VCE, COLLECTOR - EMITTER VOLTAGE (V)
600 |
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IG REF = 1.060mA, RL = 200Ω, TC = +25oC |
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15 |
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480 |
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12 |
360 |
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9 |
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VCE = 600V |
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240 |
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VCE = 400V |
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6 |
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VCE |
= 200V |
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120 |
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3 |
0 |
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2 |
4 |
6 |
8 |
10 |
12 |
14 |
QG, GATE CHARGE (nC)
VGE, GATE-EMITTER VOLTAGE (V)
FIGURE 15. CAPACITANCE AS A FUNCTION OF COLLECTOR- |
FIGURE 16. GATE CHARGE WAVEFORMS |
EMITTER VOLTAGE |
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ZθJC, NORMALIZED THERMAL RESPONSE
100
0.5
0.2
10-1 0.1
0.05
0.02 |
0.01 |
SINGLE PULSE
10-2
10-5 |
10-4 |
t1
PD
t2
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
10-3 |
10-2 |
10-1 |
100 |
101 |
t1, RECTANGULAR PULSE DURATION (s) |
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FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
5