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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by 4N38/D

		4N38
GlobalOptoisolator		4N38A*
6-Pin DIP Optoisolators		4N38A*
6-Pin DIP Optoisolators		[CTR = 20% Min]
Transistor	Output	*Motorola Preferred Device

The 4N38 and 4N38A(1) devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector.

•Guaranteed 80 Volt Collector±to±Emitter Breakdown ((BR)CEO)) Minimum

•Meets or Exceeds All JEDEC Registered Specifications

•To order devices that are tested and marked per VDE 0884 requirements, the suffix ºVº must be included at end of part number. VDE 0884 is a test option.

Applications

•General Purpose Switching Circuits

•Interfacing and coupling systems of different potentials and impedances

•Monitor and Detection Circuits

MAXIMUM RATINGS (TA = 25°C unless otherwise noted)

Rating	Symbol	Value	Unit

INPUT LED

Reverse Voltage	VR	3	Volts
Forward Current Ð Continuous	IF	80	mA
Forward Current Ð Pk (PW = 300 ms, 2% duty cycle)	IF(pk)	3	A
LED Power Dissipation @ TA = 25°C	PD	150	mW
with Negligible Power in Output Detector
Derate above 25°C		1.41	mW/°C

OUTPUT TRANSISTOR

Collector±Emitter Voltage	VCEO	80	Volts
Emitter±Collector Voltage	VECO	7	Volts
Collector±Base Voltage	VCBO	80	Volts
Collector Current Ð Continuous	IC	100	mA
Detector Power Dissipation @ TA = 25°C	PD	150	mW
with Negligible Power in Input LED			mW/°C
Derate above 25°C		1.76	mW/°C

TOTAL DEVICE

Isolation Surge Voltage(2)	VISO	7500	Vac(pk)
(Peak ac Voltage, 60 Hz, 1 sec Duration)

Total Device Power Dissipation @ TA = 25°C	PD	250	mW
Derate above 25°C		2.94	mW/°C

Ambient Operating Temperature Range(3)	T	± 55 to +100	°C
	A
Storage Temperature Range(3)	T	± 55 to +150	°C
	stg
Soldering Temperature (10 sec, 1/16″ from case)	TL	260	°C

1.4N38 does not require UL approval; 4N38A does. Otherwise both parts are identical. Both parts

1.built by Motorola have UL approval.

2.Isolation surge voltage is an internal device dielectric breakdown rating.

1. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.

3. Refer to Quality and Reliability Section in Opto Data Book for information on test conditions.

Preferred devices are Motorola recommended choices for future use and best overall value.

GlobalOptoisolator is a trademark of Motorola, Inc.

STYLE 1 PLASTIC

STANDARD THRU HOLE

CASE 730A±04

	SCHEMATIC
1	6
2	5
	5
3	4
3

PIN 1. LED ANODE

2.LED CATHODE

3.N.C.

4.EMITTER

5.COLLECTOR

6.BASE

REV 2

Motorola, Inc. 1995

4N38	4N38A
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)(1)
					A
			Characteristic			Symbol	Min	Typ	Max	Unit

INPUT LED

Forward Voltage (IF = 10 mA)					TA = 25°C	VF	Ð	1.15	1.5	Volts
					TA = ±55°C		Ð	1.3	Ð
					TA = 100°C		Ð	1.05	Ð
Reverse Leakage Current (VR = 3 V)						IR	Ð	Ð	100	μA
Capacitance (V = 0 V, f = 1 MHz)						CJ	Ð	18	Ð	pF
OUTPUT TRANSISTOR

Collector±Emitter Dark Current					(VCE = 60 V, TA = 25°C)	ICEO	Ð	20	50	nA
					(VCE = 60 V, TA = 100°C)		Ð	6	Ð	μA
Collector±Base Dark Current (VCB = 60 V)						ICBO	Ð	2	20	nA
Collector±Emitter Breakdown Voltage (IC = 1 mA)						V(BR)CEO	80	120	Ð	Volts
Collector±Base Breakdown Voltage (IC = 1 μA)						V(BR)CBO	80	120	Ð	Volts
Emitter±Collector Breakdown Voltage (IE = 100 μA)						V(BR)ECO	7	7.8	Ð	Volts
DC Current Gain (IC = 2 mA, VCE = 5 V)						hFE	Ð	400	Ð	Ð
Collector±Emitter Capacitance (f = 1 MHz, VCE = 0)						CCE	Ð	8	Ð	pF
Collector±Base Capacitance (f = 1 MHz, VCB = 0)						CCB	Ð	21	Ð	pF
Emitter±Base Capacitance ( f = 1 MHz, VEB = 0)						CEB	Ð	8	Ð	pF
COUPLED

Output Collector Current (IF = 20 mA, VCE = 1 V)						IC (CTR)(2)	4 (20)	7 (35)	Ð	mA (%)
Collector±Emitter Saturation Voltage (IC = 4 mA, IF = 20 mA)						VCE(sat)	Ð	Ð	1	Volts
Turn±On Time (I		= 2 mA, V		= 10 V, R = 100 Ω)(3)		t	Ð	5	Ð	μs
	C		CC		L	on
Turn±Off Time (I		= 2 mA, V		= 10 V, R = 100 Ω)(3)		t	Ð	4	Ð	μs
	C		CC		L	off
Rise Time (I = 2 mA, V			= 10 V, R		= 100 Ω)(3)	t	Ð	2	Ð	μs
	C	CC			L	r
Fall Time (I	= 2 mA, V		= 10 V, R		= 100 Ω)(3)	t	Ð	3	Ð	μs
	C	CC		L		f
Isolation Voltage (f = 60 Hz, t = 1 sec)(4)						V	7500	Ð	Ð	Vac(pk)
						ISO
Isolation Resistance (V = 500 V)(4)						RISO	1011	Ð	Ð	Ω
Isolation Capacitance (V = 0 V, f = 1 MHz)(4)						CISO	Ð	0.2	Ð	pF

1.Always design to the specified minimum/maximum electrical limits (where applicable).

2.Current Transfer Ratio (CTR) = IC/IF x 100%.

3.For test circuit setup and waveforms, refer to Figure 11.

4.For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.

TYPICAL CHARACTERISTICS

	2
	2

(VOLTS)						PULSE	ONLY
(VOLTS)	1.8					PULSE	OR DC
VOLTAGE						PULSE	OR DC

	1.6

FORWARD,
	1.2
	1.2
	1.4
	1.4			TA	= ±55°C
				TA	= ±55°C
F						25°C
V

	1				100°C
	1
		1	10					100	1000

IF, LED FORWARD CURRENT (mA)

Figure 1. LED Forward Voltage versus Forward Current

(NORMALIZED)	10	IF = 10 mA
	10
CURRENT		NORMALIZED TO:
CURRENT	1
	1
COLLECTOR	0.1
	0.1
OUTPUT,	0.01
C	0.1	0.2	0.5	1	2	5	10	20	50	100
C				IF, LED INPUT CURRENT (mA)
I				IF, LED INPUT CURRENT (mA)

Figure 2. Output Current versus Input Current

2	Motorola Optoelectronics Device Data

	14
(mA)	12
(mA)	10								IF = 10 mA
CURRENT	10								IF = 10 mA
	8

, COLLECTOR	6									5 mA
										5 mA
	4
	2									2 mA
C
I
	0									1 mA
	0	1	2	3	4	5	6	7	8	9	10
	0	1	2	3	4	5	6	7	8	9	10

VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

Figure 3. Collector Current versus

Collector±Emitter Voltage

(NORMALIZED)	103	NORMALIZED TO:					VCE = 70 V
CURRENT	103		VCE = 10 V
CURRENT	102		TA = 25°C				30 V
			TA = 25°C

DARK							10 V
DARK	101
COLLECTOR±EMITTER,	101
COLLECTOR±EMITTER,	100
	100
	10±1
	0		20		40		60		80	100
CEO				TA, AMBIENT TEMPERATURE (°C)
CEO			Figure 5. Dark Current versus
I			Figure 5. Dark Current versus
				Ambient Temperature
	100
	50						VCC = 10 V
	50
(μs)	20
TIME	20				RL = 1000
TIME
TURN±ON,
TURN±ON,	10					100
	10

	5
on						10
t
	2
	1	0.2	0.5	1	2	5	10	20	50	100
	0.1	0.2	0.5	1	2	5	10	20	50	100

IF, LED INPUT CURRENT (mA)

Figure 7. Turn±On Switching Times

(Typical Values)

(NORMALIZED								4N38		4N38A
(NORMALIZED	7						NORMALIZED TO TA = 25°C
	7
	5
CURRENT	5
CURRENT	1
COLLECTOR	2
COLLECTOR	0.7
	0.7
	0.5
OUTPUT,	0.2
OUTPUT,	0.1	±60	±40		±20	0	20 40	60	80	100
	0.1
C					TA, AMBIENT TEMPERATURE (°C)
I					TA, AMBIENT TEMPERATURE (°C)
			Figure 4. Output Current versus
					Ambient Temperature
	100
	50								VCC = 10 V
	50
	20
TIMEt, (μs)	10	RL = 1000		{				tf
TIMEt, (μs)				{

	5	RL = 100 {						tr
								tr
	2							tf
	1							tr
	1
	0.1	0.2	0.5		1	2	5	10	20	50	100
					IF, LED INPUT CURRENT (mA)

Figure 6. Rise and Fall Times

(Typical Values)

	100
	50							VCC = 10 V
	50
(μs)
TIME	20
	20
TURN±OFF	10				RL = 1000
TURN±OFF

	5				100
,					100
,
off
t	2				10
					10

	1	0.2	0.5	1	2	5	10	20	50	100
	0.1	0.2	0.5	1	2	5	10	20	50	100

IF, LED INPUT CURRENT (mA)

Figure 8. Turn±Off Switching Times

(Typical Values)

Motorola Optoelectronics Device Data

4N38 4N38A

I , TYPICAL COLLECTOR CURRENT (mA)

4
4	IF = 0								IB = 8 μA
	IF = 0								IB = 8 μA
3										7 μA

										6 μA
										6 μA

										5 μA
2										4 μA
										3 μA
1										2 μA

										1 μA

0	2	4	6	8	10	12	14	16	18		20
		VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

	20
	18								f = 1 MHz
	16								f = 1 MHz
	16
(pF)	14
(pF)
CAPACITANCE	12						CLED
	10					CCB	CLED
	10			CCE		CCB
	8			CCE
	8			CEB
	6			CEB
C,	6
C,	4
	4
	2
	0
	0.5	0.1	0.2	0.5	1	2	5	10	20	50
				V, VOLTAGE (VOLTS)

Figure 9. DC Current Gain (Detector Only)			Figure 10. Capacitances versus Voltage
TEST CIRCUIT			WAVEFORMS
VCC = 10 V				INPUT PULSE
VCC = 10 V
IC	RL	= 100 Ω
	RL	= 100 Ω	10%
		OUTPUT	10%
INPUT		OUTPUT	90%	OUTPUT PULSE
			90%
INPUT CURRENT ADJUSTED			tr	tf
TO ACHIEVE IC = 2 mA.			ton	t
				off

Figure 11. Switching Time Test Circuit and Waveforms

4	Motorola Optoelectronics Device Data

							4N38		4N38A
		PACKAGE DIMENSIONS
	±A±
			NOTES:
6	4		1. DIMENSIONING AND TOLERANCING PER ANSI
6	4		Y14.5M, 1982.
			Y14.5M, 1982.
	±B±		2. CONTROLLING DIMENSION: INCH.
1	3		3. DIMENSION L TO CENTER OF LEAD WHEN
1	3		FORMED PARALLEL.
					INCHES		MILLIMETERS
F 4 PL	C	L	DIM		MIN	MAX	MIN	MAX
	C		A	0.320		0.350	8.13	8.89
	N		A	0.320		0.350	8.13	8.89
	N		B	0.240		0.260	6.10	6.60
			B	0.240		0.260	6.10	6.60
			C		0.115	0.200	2.93	5.08
			D	0.016		0.020	0.41	0.50
			E	0.040		0.070	1.02	1.77
±T±	K		F	0.010		0.014	0.25	0.36
±T±			G		0.100 BSC		2.54 BSC
SEATING			G		0.100 BSC		2.54 BSC
SEATING			J	0.008		0.012	0.21	0.30
PLANE	G	J 6 PL	K	0.100		0.150	2.54	3.81
		J 6 PL	K	0.100		0.150	2.54	3.81
		0.13 (0.005) M T B M A M	L		0.300 BSC		7.62 BSC
	M		L		0.300 BSC		7.62 BSC
E 6 PL	M		M		0	15	0	15
E 6 PL	D 6 PL		N	0.015		0.100	0.38	2.54
			N	0.015		0.100	0.38	2.54

	0.13 (0.005) M T A	M B M	STYLE 1:
			PIN 1.		ANODE
				2.	CATHODE
				3.	NC
				4.	EMITTER
				5.	COLLECTOR
				6.	BASE

CASE 730A±04

ISSUE G

±A±

6	4
	±B± S
1	3
F 4 PL	H	L
	H
	C
	G	J	±T±
	G	J	SEATING
E 6 PL		K 6 PL	PLANE
E 6 PL		K 6 PL
	D 6 PL	0.13 (0.005) M	T B M A M
	0.13 (0.005) M T A M	B M

NOTES:

1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2.CONTROLLING DIMENSION: INCH.

	INCHES		MILLIMETERS
DIM	MIN	MAX	MIN	MAX
A	0.320	0.350	8.13	8.89
B	0.240	0.260	6.10	6.60
C	0.115	0.200	2.93	5.08
D	0.016	0.020	0.41	0.50
E	0.040	0.070	1.02	1.77
F	0.010	0.014	0.25	0.36
G	0.100 BSC		2.54 BSC
H	0.020	0.025	0.51	0.63
J	0.008	0.012	0.20	0.30
K	0.006	0.035	0.16	0.88
L	0.320 BSC		8.13 BSC
S	0.332	0.390	8.43	9.90

*Consult factory for leadform

option availability

CASE 730C±04

ISSUE D

Motorola Optoelectronics Device Data

Источник: https://studfile.net/preview/16502955/

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