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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MAC321/D

Triacs	MAC321
Silicon Bidirectional Thyristors	Series
. . . designed for full-wave ac control applications primarily in industrial environments
needing noise immunity.
• Guaranteed High Commutation Voltage
dv/dt Ð 500 V/ μs Min @ TC = 25°C	TRIACs
• High Blocking Voltage Ð V DRM to 800 V	20 AMPERES RMS
• Photo Glass Passivated Junction for Improved Power Cycling Capability and	200 thru 800 VOLTS
Reliability


	MT2		MT1


		G		CASE 221A-04
		G


				(TO-220AB)
				STYLE 4
MAXIMUM RATINGS (TC = 25°C unless otherwise noted.)
MAXIMUM RATINGS (TC = 25°C unless otherwise noted.)
Rating			Symbol	Value	Unit

Peak Repetitive Off-State Voltage(1) (T = ±40 to +125°C,			V		Volts
J			DRM
1/2 Sine Wave 50 to 60 Hz, Open Gate)
MAC321-4				200
MAC321-6				400
MAC321-8				600
MAC321-10				800

Peak Gate Voltage			VGM	10	Volts
On-State Current RMS (TC = +75°C			IT(RMS)	20	Amp
Full Cycle Sine Wave 50 to 60 Hz)

Peak Surge Current (One Full Cycle, 60 Hz, TC = +75°C			ITSM	150	Amp
preceded and followed by Rated Current)

Circuit Fusing Considerations (t = 8.3 ms)			I2t	93	A2s
Peak Gate Power (TC = +75°C, Pulse Width = 2.0 μs)			PGM	20	Watts
Average Gate Power (TC = +75°C, t = 8.3 ms)			PG(AV)	0.5	Watt
Peak Gate Current			IGM	2.0	Amp
Operating Junction Temperature Range			TJ	±40 to +125	°C
Storage Temperature Range			Tstg	±40 to +150	°C
THERMAL CHARACTERISTICS

Characteristic			Symbol	Max	Unit

Thermal Resistance, Junction to Case			RθJC	1.8	°C/W

1.VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.

Motorola, Inc. 1995

MAC321 Series

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)

Characteristic	Symbol	Min	Typ	Max	Unit

Peak Blocking Current	IDRM
(VD = Rated VDRM, Gate Open)
TJ = 25°C		Ð	Ð	10	μA
TJ = +125°C		Ð	Ð	2.0	mA
Peak On-State Voltage (Either Direction)	VTM	Ð	1.4	1.7	Volts
(ITM = 28 A Peak; Pulse Width p 2.0 ms, Duty Cycle p 2.0%)
Gate Trigger Current (Continuous dc)	IGT				mA
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+)		Ð	Ð	100
MT2(+), G(±)		Ð	Ð	100
MT2(±), G(±)		Ð	Ð	100

Gate Trigger Voltage (Continuous dc)	VGT				Volts
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+)		Ð	Ð	2.0
MT2(+), G(±)		Ð	Ð	2.0
MT2(±), G(±)		Ð	Ð	2.0
(Main Terminal Voltage = Rated VDRM, RL = 10 kΩ, TJ = +125°C)
MT2(+), G(+); MT2(±), G(±); MT2(+), G(±)		0.2	Ð	Ð

Holding Current (Either Direction)	IH	Ð	Ð	100	mA
(Main Terminal Voltage = 12 Vdc, Gate Open,
Initiating Current = 200 mA)

Turn-On Time	tgt	Ð	1.5	Ð	μs
(VD = Rated VDRM, ITM = 28 A, IGT = 120 mA,
Rise Time = 0.1 μs, Pulse Width = 2.0 μs)

Critical Rate of Rise of Off-State Voltage	dv/dt(s)				V/μs
(VD = Rated VDRM, Exponential Voltage Rise, Gate Open)
TJ = 25°C		500	Ð	Ð
TJ = +125°C		200	Ð	Ð

									TYPICAL CHARACTERISTICS
(°C)	130
CASE TEMPERATURE	130												40
	120											, AVERAGE POWER (WATT)	35				α
	120							α = 30°					35
								α = 30°							α							90°180° dc
	110								60°90°				30		α							90°180° dc
	100												25		α = CONDUCTION
	100												25		ANGLE
															ANGLE
	90												20
	80			α					180°				15									60°
									180°													60°
ALLOWABLE	70		α							dc		D(AV)	10								α = 30°
ALLOWABLE												D(AV)
MAXIMUM	60	α = CONDUCTION										P	5
	50		ANGLE										0
		2	4	6	8	10	12	14	16	18	20
,														2	4	6	8	10	12	14	16	18	20
C	0												0	2	4	6	8	10	12	14	16	18	20
T			IT(RMS), RMS ON-STATE CURRENT (AMP)												IT(RMS), RMS ON-STATE CURRENT (AMP)
			IT(RMS), RMS ON-STATE CURRENT (AMP)												IT(RMS), RMS ON-STATE CURRENT (AMP)

Figure 1. RMS Current Derating

Figure 2. On-State Power Dissipation

2	Motorola Thyristor Device Data

VGTM , GATE TRIGGER VOLTAGE (NORMALIZED)

I GTM , GATE TRIGGER CURRENT (NORMALIZED)

I H , HOLDING CURRENT (NORMALIZED)

OFF-STATE VOLTAGE = 12 Vdc

ALL MODES

0.7

0.5

0.3
±60	±40	±20	0	20	40	60	80	100	120	140

TJ, JUNCTION TEMPERATURE (°C)

Figure 3. Typical Gate Trigger Voltage

OFF-STATE VOLTAGE = 12 Vdc

ALL MODES

0.7

0.5

0.3

±60

±40

±20

100

120

140

TJ, JUNCTION TEMPERATURE(°C)

Figure 4. Typical Gate Trigger Current

GATE OPEN

APPLIES TO EITHER DIRECTION

0.7

0.5

0.3
±60	±40	±20	0	20	40	60	80	100	120	140

TJ, JUNCTION TEMPERATURE (°C)

Figure 6. Typical Holding Current

MAC321 Series

	100
	70


	50

					TJ =		25°C
					TJ =		25°C
	30								125°C


(AMP)	20
	20
	10

CURRENT

	7


FORWARD
	5


INSTANTANEOUS	3


	1
,	2


TM	0.7
TM	0.7
i	0.5



	0.3


	0.2
	0.2
	0.1
	0.1
	0.4	0.8		1.2		1.6		2	2.4		2.8		3.2	3.6		4	4.4
			vTM, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
		Figure 5. Maximum On-State Characteristics
(AMP)	300
	300
	200


CURRENT
CURRENT
SURGE	100
	100
,PEAK	70



	50

SM		TC = 80°C
SM		TC = 80°C
T		f = 60 Hz
T	30	SURGE IS PRECEDED AND								FOLLOWED		BY RATED			CURRENT
		SURGE IS PRECEDED AND								FOLLOWED		BY RATED			CURRENT


	1					2			3				5			7	10

NUMBER OF CYCLES

Figure 7. Maximum On-Repetitive Surge Current

Motorola Thyristor Device Data

MAC321 Series

RESISTANCETHERMALTRANSIENT (NORMALIZED)	1
	0.5



	0.2

													Z	θ	JC(t)		= r(t) •RθJC
	0.1												Z	θ	JC(t)		= r(t) •RθJC
	0.1
	0.05




r(t),	0.02



	0.01
	0.01
	0.1	0.2	0.5	1	2	5	10	20	50	100	200	500				1 k		2 k	5 k	10 k
									t, TIME (ms)

Figure 8. Thermal Response

4	Motorola Thyristor Device Data

MAC321 Series

PACKAGE DIMENSIONS

							NOTES:
							1. DIMENSIONING AND TOLERANCING PER ANSI
				±T±	PLANESEATING		Y14.5M, 1982.
				±T±	PLANESEATING		2. CONTROLLING DIMENSION: INCH.
							3. DIMENSION Z DEFINES A ZONE WHERE ALL
	B		F	C			BODY AND LEAD IRREGULARITIES ARE
	B		F	C			ALLOWED.
			T		S			INCHES		MILLIMETERS
					S			INCHES		MILLIMETERS
							DIM	MIN	MAX	MIN	MAX
		4					A	0.570	0.620	14.48	15.75
Q		4	A		STYLE 4:		B	0.380	0.405	9.66	10.28
					STYLE 4:		B	0.380	0.405	9.66	10.28
					PIN 1. MAIN TERMINAL 1		C	0.160	0.190	4.07	4.82
1	2	3	U		2.	MAIN TERMINAL 2	D	0.025	0.035	0.64	0.88
1	2	3	U		3.	GATE	F	0.142	0.147	3.61	3.73
H					4.	MAIN TERMINAL 2	G	0.095	0.105	2.42	2.66
							H	0.110	0.155	2.80	3.93
			K				J	0.014	0.022	0.36	0.55
Z							K	0.500	0.562	12.70	14.27
Z							L	0.045	0.055	1.15	1.39
							L	0.045	0.055	1.15	1.39
							N	0.190	0.210	4.83	5.33
L					R		Q	0.100	0.120	2.54	3.04
L					R		R	0.080	0.110	2.04	2.79
V				J			S	0.045	0.055	1.15	1.39
V				J			T	0.235	0.255	5.97	6.47
G							U	0.000	0.050	0.00	1.27
G							V	0.045	±±±	1.15	±±±
			D				V	0.045	±±±	1.15	±±±
			D				Z	±±±	0.080	±±±	2.04
	N

CASE 221A-04 (TO±220AB)

Motorola Thyristor Device Data

Источник: https://studfile.net/preview/16503754/

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