Материал: mrf323rev0
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF323/D
The RF Line
NPN Silicon
RF Power Transistor
. . . designed primarily for wideband large±signal driver and predriver amplifier stages in the 200±500 MHz frequency range.
•Guaranteed Performance at 400 MHz, 28 V Output Power = 20 Watts
Power Gain = 10 dB Min Efficiency = 50% Min
•100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
•Gold Metallization System for High Reliability
•Computer±Controlled Wirebonding Gives Consistent Input Impedance
MAXIMUM RATINGS
Rating |
Symbol |
Value |
Unit |
|
|
|
|
Collector±Emitter Voltage |
VCEO |
33 |
Vdc |
Collector±Base Voltage |
VCBO |
60 |
Vdc |
Emitter±Base Voltage |
VEBO |
4.0 |
Vdc |
Collector Current Ð Continuous |
IC |
2.2 |
Adc |
Collector Current Ð Peak |
|
3.0 |
|
|
|
|
|
Total Device Dissipation @ TC = 25°C (1) |
PD |
55 |
Watts |
Derate above 25°C |
|
310 |
mW/°C |
|
|
|
|
Storage Temperature Range |
Tstg |
± 65 to +150 |
°C |
THERMAL CHARACTERISTICS
MRF323
20 W, 400 MHz RF POWER TRANSISTOR NPN SILICON
CASE 244±04, STYLE 1
Characteristic |
|
Symbol |
Max |
|
Unit |
|
|
|
|
|
|
|
|
Thermal Resistance, Junction to Case |
|
RθJC |
3.2 |
|
°C/W |
|
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) |
|
|
|
|
|
|
|
|
|
|
|
|
|
Characteristic |
Symbol |
Min |
Typ |
|
Max |
Unit |
|
|
|
|
|
|
|
OFF CHARACTERISTICS |
|
|
|
|
|
|
|
|
|
|
|
|
|
Collector±Emitter Breakdown Voltage |
V(BR)CEO |
33 |
Ð |
|
Ð |
Vdc |
(IC = 20 mAdc, IB = 0) |
|
|
|
|
|
|
Collector±Emitter Breakdown Voltage |
V(BR)CES |
60 |
Ð |
|
Ð |
Vdc |
(IC = 20 mAdc, VBE = 0) |
|
|
|
|
|
|
Collector±Base Breakdown Voltage |
V(BR)CBO |
60 |
Ð |
|
Ð |
Vdc |
(IC = 20 mAdc, IE = 0) |
|
|
|
|
|
|
Emitter±Base Breakdown Voltage |
V(BR)EBO |
4.0 |
Ð |
|
Ð |
Vdc |
(IE = 2.0 mAdc, IC = 0) |
|
|
|
|
|
|
Collector Cutoff Current |
ICBO |
Ð |
Ð |
|
2.0 |
mAdc |
(VCB = 30 Vdc, IE = 0) |
|
|
|
|
|
|
ON CHARACTERISTICS |
|
|
|
|
|
|
|
|
|
|
|
|
|
DC Current Gain |
hFE |
20 |
Ð |
|
80 |
Ð |
(IC = 1.0 Adc, VCE = 5.0 Vdc) |
|
|
|
|
|
|
NOTE: |
|
|
|
|
|
(continued) |
1.This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
Motorola, Inc. 1994
ELECTRICAL CHARACTERISTICS Ð continued (TC = 25°C unless otherwise noted.)
Characteristic |
Symbol |
Min |
|
Typ |
Max |
|
Unit |
|
|
|
|
|
|
|
|
DYNAMIC CHARACTERISTICS |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Output Capacitance |
Cob |
Ð |
|
20 |
24 |
|
pF |
(VCB = 28 Vdc, IE = 0, f = 1.0 MHz) |
|
|
|
|
|
|
|
FUNCTIONAL TESTS (Figure 1) |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Common±Emitter Amplifier Power Gain |
GPE |
10 |
|
11 |
Ð |
|
dB |
(VCC = 28 Vdc, Pout = 20 W, f = 400 MHz) |
|
|
|
|
|
|
|
Collector Efficiency |
h |
50 |
|
60 |
Ð |
|
% |
(VCC = 28 Vdc, Pout = 20 W, f = 400 MHz) |
|
|
|
|
|
|
|
Load Mismatch |
y |
|
|
|
|
|
|
(VCC = 28 Vdc, Pout = 20 W, f = 400 MHz, |
|
|
No Degradation in Output Power |
|
|||
VSWR = 30:1 all phase angles) |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
L4 |
|
|
|
|
|
|
|
|
|
|
|
|
+ |
|
|
|
|
|
|
C9 |
C10 |
+ |
28 V |
|
|
|
|
|
C8 |
C11 |
± |
||
|
|
|
|
|
|
|
|||
|
|
|
|
|
|
|
|
± |
|
|
|
|
|
L3 |
|
|
|
|
|
|
|
|
|
|
|
|
|
C12 |
|
|
|
|
|
|
|
Z3 |
Z4 |
|
RF OUTPUT |
|
|
|
|
DUT |
|
|
|
|
|
RF INPUT |
Z1 |
Z2 |
|
|
L2 |
|
|
|
|
|
|
L1 |
|
|
C5 |
C6 |
C7 |
|
|
|
|
C3 |
C4 |
|
|
|
|
|
|
|
C1 |
C2 |
|
|
|
|
|
||
|
|
|
|
|
R1 |
|
|
|
|
|
C1, C2, C6 Ð 1.0± 20 pF Johanson Trimmer (JMC 5501) |
L2 Ð 6 Turns #20 Enamel, 1/4 ″ |
ID, Closewound |
|
|||||
|
C3, C4 Ð 47 pF ATC Chip Capacitor |
|
|
L3 Ð 4 Turns #20 Enamel, 1/8 ″ |
ID, Closewound |
|
|||
|
C5, C8 Ð 0.1 mF Erie Redcap |
|
|
L4 Ð Ferroxcube VK200±19/4B |
|
|
|||
|
C7 Ð 0.5± 10 pF Johanson Trimmer (JMC 5201) |
|
R1 Ð 5.1 W 1/4 Watt |
|
|
|
|||
|
C9, C10 Ð 680 pF Feedthru |
|
|
Z1 Ð Microstrip 0.1 ″ |
W x 1.35″ |
L |
|
||
|
C11 Ð 1.0 mF 50 Volt Tantalum |
|
|
Z2 Ð Microstrip 0.1 ″ |
W x 0.55″ |
L |
|
||
|
C12 Ð 0.018 mF Vitramon Chip Capacitor |
|
|
Z3 Ð Microstrip 0.1 ″ |
W x 0.8″ L |
|
|
||
|
L1 Ð 0.33 mH Molded Choke with Ferroxcube Bead |
Z4 Ð Microstrip 0.1 ″ |
W x 1.75″ |
L |
|
||||
|
L1 Ð (Ferroxcube 56±590±65/4B) on Ground End |
Board Ð Glass Teflon |
er = 2.56, t = 0.062″ |
|
|||||
|
|
|
|
|
Input/Output Connectors Ð Type N |
|
|||
Figure 1. 400 MHz Test Circuit Schematic
MRF323 |
MOTOROLA RF DEVICE DATA |
2 |
|
(WATTS) |
25 |
|
|
|
|
20 |
|
|
|
Pin = 3 W |
|
|
|
|
|
||
POWER |
15 |
|
|
|
2.5 W |
|
|
|
2 W |
||
|
|
|
|
||
OUTPUT |
|
|
|
|
|
10 |
|
|
|
1.5 W |
|
|
|
|
|
||
|
|
|
|
|
|
, |
|
|
|
|
1 W |
|
|
|
|
|
|
out |
5 |
|
|
|
0.7 W |
P |
|
|
|
||
|
|
VCC = 28 V |
|
|
0.4 W |
|
|
|
|
|
|
|
0 |
200 |
300 |
400 |
500 |
|
0 |
f, FREQUENCY (MHz)
Figure 2. Output Power versus Frequency
Pout, OUTPUT POWER (WATTS)
25
f = 200 MHz |
400 |
500 |
20
15
10
5 |
|
|
|
|
|
|
|
|
|
VCC = 28 V |
|
0 0 |
1 |
2 |
3 |
4 |
5 |
|
|
Pin, INPUT POWER (WATTS) |
|
|
|
Figure 3. Output Power versus Input Power
|
24 |
|
|
|
|
|
|
22 |
out |
8 |
|
|
|
Pin = 1.8 W |
AMPLIFIEREMITTERCOMMON, |
(dB)GAINPOWER |
6 |
(WATTS) |
20 |
|
|
|
|
|
|
18 |
POWER |
16 |
|
|
|
|
|
|
14 |
|
|
|
|
|
|
|
||
OUTPUT, |
|
|
|
|
1.1 W |
|
|
|
12 |
|
|
|
|
|
|
10 |
|
|
|
|
|
|
|
|
||
P |
|
|
|
|
|
PE |
|
|
|
|
|
|
|
f = 400 MHz |
G |
|
|
|
|
|
|
|
|
|
|
|
|
4 |
14 |
18 |
22 |
26 |
30 |
|
2 |
|
10 |
|
0 |
VCC, SUPPLY VOLTAGE (VOLTS)
Figure 4. Output Power versus Supply Voltage
Po = 20 W
VCC = 28 V
200 |
300 |
400 |
500 |
f, FREQUENCY (MHz)
Figure 5. Power Gain versus Frequency
MOTOROLA RF DEVICE DATA |
MRF323 |
|
3 |
|
|
± 5 |
|
0 |
400 |
450 5 |
|
|
|
f = 200 MHz |
|
||
|
|
|
|
Zin |
|
|
± 10 |
|
|
|
|
10 |
|
|
|
|
|
|
||
|
|
|
|
|
|
500 |
|
|
|
|
5 |
|
|
|
|
|
450 |
|
|
|
|
400 |
|
|
500 |
|
|
|
|
|
|
|
|
|
|
|
ZOL* |
|
|
|
|
f = 200 MHz |
|
|
10 |
|
|
|
|
|
|
|
|
||
|
Pout = 20 W, VCC = 28 V |
|
|
|
||
f |
|
Zin |
ZOL* |
15 |
|
|
MHz |
Ohms |
Ohms |
|
|
|
|
200 |
0.6 |
± j0.23 |
7.2 ± j11.4 |
|
|
|
400 |
0.71 + j1.79 |
6.0 ± j6.87 |
|
|
|
|
450 |
1.2 |
+ j3.8 |
5.9 ± j5.1 |
20 |
|
|
500 |
2.3 |
+ j5.5 |
6.2 ± j3.1 |
|
|
|
|
|
|
||||
25
ZOL* = Conjugate of the optimum load impedance into which the device output operates at a given output power, ZOL* = voltage and frequency.
Figure 6. Series Equivalent Impedance
MRF323 |
MOTOROLA RF DEVICE DATA |
4 |
|
PACKAGE DIMENSIONS
|
2 |
|
3 |
1 |
D |
|
4 |
K |
M
T |
|
A |
J |
|
|
|
|
|
|
F |
|
|
SEATING PLANE |
C |
P |
|
U |
S |
|
|
|
|||
|
8±32 NC 2A |
|
|
|
WRENCH FLAT |
|
E |
|
|
|
|
|
B |
|
CASE 244±04
ISSUE J
|
MILLIMETERS |
INCHES |
||
DIM |
MIN |
MAX |
MIN |
MAX |
A |
7.06 |
7.26 |
0.278 |
0.286 |
B |
6.20 |
6.50 |
0.244 |
0.256 |
C |
14.99 |
16.51 |
0.590 |
0.650 |
D |
5.46 |
5.96 |
0.215 |
0.235 |
E |
1.40 |
1.65 |
0.055 |
0.065 |
G |
1.52 |
±±± |
0.060 |
±±± |
J |
0.08 |
0.17 |
0.003 |
0.007 |
K |
11.05 |
±±± |
0.435 |
±±± |
M |
45 |
NOM |
45 |
NOM |
P |
±±± |
1.27 |
±±± |
0.050 |
S |
3.00 |
3.25 |
0.118 |
0.128 |
T |
1.40 |
1.77 |
0.055 |
0.070 |
U |
2.92 |
3.68 |
0.115 |
0.145 |
STYLE 1:
PIN 1. EMITTER
2.BASE
3.EMITTER
4.COLLECTOR
MOTOROLA RF DEVICE DATA |
MRF323 |
|
5 |