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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by TPV8200B/D

The RF Line

NPN Silicon

RF Power Transistor

The TPV8200B is designed for output stages in band IV and V TV transmitter amplifiers. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness.

Including input and output matching networks, the TPV8200B features high impedances. It can operate over the 470 MHz to 860 MHz bandwidth using a single fixed tuned circuit.

•To be used class AB for TV band IV and V.

•Specified 28 Volts, 860 MHz Characteristics Output Power = 190 Watts (peak sync.) Output Power = 150 Watts (CW)

Gain = 8 dB Min

•Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ.

MAXIMUM RATINGS

TPV8200B

Motorola Preferred Device

190 W, 470 ± 860 MHz RF POWER TRANSISTOR

NPN SILICON

CASE 375A±01, STYLE 1

Rating		Symbol		Value		Unit

Collector±Emitter Voltage		VCEO		30		Vdc
Collector±Base Voltage		VCBO		65		Vdc
Emitter±Base Voltage		VEBO		4		Vdc
Collector±Current Ð Continuous		IC		20		Adc
Total Device Dissipation @ TC = 25°C		PD		250		Watts
Derate above 25°C				1.43		W/°C

Quiescent Current (without RF drive)		ICQ		2 x 500		mAdc
Storage Temperature Range		Tstg	± 65 to +150			°C
THERMAL CHARACTERISTICS

Characteristic		Symbol		Max		Unit

Thermal Resistance, Junction to Case (1)		RθJC		0.7		°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic	Symbol	Min	Typ		Max	Unit

OFF CHARACTERISTICS

Collector±Emitter Breakdown Voltage	V(BR)CEO	30	35		Ð	Vdc
(IC = 20 mAdc, IB = 0)
Collector±Base Breakdown Voltage	V(BR)CBO	65	80		Ð	Vdc
(IC = 20 mAdc, IE = 0)
Emitter±Base Breakdown Voltage (IE = 20 mAdc, IC = 0)	V(BR)EBO	4	5		Ð	Vdc
Collector±Emitter Leakage Current (VCE = 28 Vdc, RBE = 75 Ω)	ICER	Ð	Ð		15	mAdc

NOTE:	(continued)
1. Thermal resistance is determined under specific RF condition.
Teflon is a registered trademark of du Pont de Nemours & Co., Inc.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 6

Motorola, Inc. 1994

ELECTRICAL CHARACTERISTICS Ð continued (TC = 25°C unless otherwise noted)

Characteristic	Symbol	Min	Typ	Max	Unit

ON CHARACTERISTICS

DC Current Gain (ICE = 2 Adc, VCE = 10 Vdc)

hFE

120

DYNAMIC CHARACTERISTICS

Output Capacitance (each side) (2)

Cob

(VCB = 28 Vdc, IE = 0, f = 1 MHz)

FUNCTIONAL TESTS IN CW

Common±Emitter Amplifier Power Gain

Gpe

9.5

(VCE = 28 Vdc, Pout = 150 W, ICQ = 2 x 75 mA, f = 860 MHz)

Collector Efficiency

(VCE = 28 Vdc, Pout = 150 W, ICQ = 2 x 75 mA, f = 860 MHz)

Output Power @ 1 dB Compression (Pref = 40 W)

Pout

150

165

(VCE = 28 Vdc, ICQ = 2 x 75 mA, f = 860 MHz)

Input overdrive: no degradation

(VCE = 28 Vdc, ICQ = 2 x 75 mA, f = 860 MHz)

Output Mismatch Stress:

No Degradation in Output Power

(VCE = 28 Vdc, Pout = 120 W, ICQ = 2 x 75 mA, f = 860 MHz,

Before or After Test

Load VSWR = 3:1, all phase angles at frequency of test)

FUNCTIONAL TESTS IN VIDEO (Standard Black Level)

Peak Output Power @ 1 dB Compression

Pout

190

210

(VCE = 28 Vdc, ICQ = 2 x 75 mA, f = 860 MHz)

NOTE:

2. Value of ªC º is that of die only. It is not measurable in TPV8200B because of internal matching network.

VCC

C11

C10

D.U.T.

INPUT

OUTPUT

C1 Ð Chip Capacitor 47 pF ATC 100A

C8 Ð Capacitor 220

mF/16 V

R3 Ð Resistor 0.8

C2 Ð Chip Capacitor 12 pF ATC 100B

C9 Ð Capacitor 100

mF/40 V

R4 Ð Resistor 47

C2 Ð + Trimmer Capacitor 0.5± 4 pF

C10 Ð Chip Capacitor 100 pF Vitramon

R5 Ð Resistor 1.2 k W

C3 Ð Chip Capacitor 8.2 pF ATC 100B

C11 Ð Chip Capacitor 15 nF Vitramon

P1 Ð Trimmer Resistor 5 k W

C4 Ð Chip Capacitor 12 pF ATC 100B

L1 Ð Coaxial 25 W / length = 41 mm

T1 Ð Transistor BD 135

C5 Ð Chip Capacitor 100 pF ATC 100A

L2 Ð Coaxial 25 W / length = 41 mm

T2 Ð Transistor BD 135

C6 Ð Chip Capacitor 2 x 1000 pF Vitramon

R1 Ð Chip Resistor 47 W

PC Board: 1/50″ Glass Teflon

r = 2.55

C7 Ð Chip Capacitor 2 x 0.1

mF Vitramon

R2 Ð 2 x 1 W (0.5 W)

Figure 1. 860 MHz Test Circuit

TPV8200B

MOTOROLA RF DEVICE DATA

INPUT

OUTPUT

Figure 2. Components View

CAUTION

The TPV8200B is a high power transistor and thermal adaptation is very important for good RF performance

(see mechanical drawing for mounting recommendations).

Maximum Ratings are given to avoid destruction of the transistor; another limitation is MMMTBF and the user must first determine the minimum wanted life±time in order to choose the right way of use for the device (see MMMTBF curves), especially in case of CW application.

MOTOROLA RF DEVICE DATA	TPV8200B
	3

			TYPICAL CHARACTERISTICS
POWER(WATTS)	230		GAINPOWER(dB)	13
POWER(WATTS)	170		GAINPOWER(dB)	10
	210			12
	190			11
OUTPUT,			G		V		= 28 V
			,
			pe
o	150		VCE = 28 V	9		CE
P			VCE = 28 V		ICQ = 2 x 75 mA
			ICQ = 2 x 75 mA		ICQ = 2 x 75 mA
			ICQ = 2 x 75 mA		Pout = 150 W
					Pout = 150 W
	130			8
	470	665	860	470	665		860
		f, FREQUENCY (MHz)			f, FREQUENCY (MHz)

Figure 3. Output Power @ 1 dB Comp.

Figure 4. Power Gain versus Frequency

versus Frequency

						60
(WATTS)	150					50
						50
					(%)	40
OUTPUT POWER	100				η , EFFICIENCY
						30
	50	V		= 28 V		20
	50	V	CE	= 28 V
,			CE
o		ICQ = 2 x 75 mA
P		ICQ = 2 x 75 mA				10
		f = 860 MHz				10
		f = 860 MHz
	0					0
	0	10			20

			VCE = 28 V
			ICQ = 2 x 75 mA
			f = 860 MHz
0	50	100	150

INPUT POWER (WATTS)	OUTPUT POWER (WATTS)
Figure 5. Output Power versus Input Power	Figure 6. Collector Efficiency versus Output Power

	±20					±20
			±5 dB	VCE = 28 V
		IMD	±5 dB	ICQ = 2 x 75 mA
(dB)		IMD	±17 dB	f = 860 MHz	(dB)
(dB)	±30				(dB)	±30
INTERMODULATION	±30				INTERMODULATION	±30
	±40					±40

	±50					±50
	50	100	150	200	250

	VCE = 28 V
	ICQ = 2 x 75 mA
	f = 860 MHz
		IMD	0 dB
		IMD	±7 dB
			±7 dB
25	50	75	100

Po, OUTPUT POWER (WATTS)

Figure 7. Intermodulation versus Peak Power	Figure 8. Intermodulation versus Peak Power
(Side Band)	(Dual Sound)

TPV8200B	MOTOROLA RF DEVICE DATA
4

			TYPICAL VIDEO CHARACTERISTICS @ f = 860 MHz
						VCE = 28 V
		VCE = 28 V	100						VCE = 28 V
	ICQ = 2 x 75 mA		100	(Input Video Waveform)					ICQ = 2 x 75 mA	(Input Video Waveform)
	ICQ = 2 x 75 mA			(Input Video Waveform)					ICQ = 2 x 75 mA	(Input Video Waveform)
		f = 860 MHz	0						f = 860 MHz	27%
		(Channel 69)							(Channel 69)	27%
		(Channel 69)							(Channel 69)	0%
		Black Level	40						Black Level	0%
							30
POWER (WATTS)	200
	150					PULSE (%)	25
	150

OUTPUT	100					SYNC.	20
							20

,
o
P
	50
	5	10		15	20	25	15	0	50	100	150	200
	5	10		15	20	25		0	50	100	150	200

Pin, INPUT POWER (WATTS)	Po, OUTPUT POWER (WATTS)
Figure 9. Peak Output Power versus Peak	Figure 10. Sync. Pulse versus Peak
Input Power	Output Power

TEST CONDITIONS: 10% Rest Carrier Channel 69

VCE = 28 V ICQ = 2 x 75 mA

(Input Video Waveform)

	%			%			%
	%			%			%
		100			100			100


		90			90			90


		80			80			80


		70			70			70


		60			60			60


		50			50			50


		40			40			40


		30			30			30


		20			20			20


		10			10			10


		0			0			0



Pout = 100 W			Pout = 150 W			Pout = 210 W			Pout = 210 W
									APL 10±90 (%)

Figure 11. Gain versus Output Power

MOTOROLA RF DEVICE DATA	TPV8200B
	5

Источник: https://studfile.net/preview/16503576/

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