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S E M I C O N D U C T O R

July 1995

HFA3046, HFA3096, HFA3127, HFA3128

Ultra High Frequency Transistor Array

Features

Description

• NPN Transistor (fT). . . . . . . . . . . . . . . . . . . . . . . . . 8GHz

• NPN Current Gain (hFE) . . . . . . . . . . . . . . . . . . . . . . . . 70

• NPN Early Voltage (V ) . . . . . . . . . . . . . . . . . . . . . . . 50V

A

• PNP Transistor (fT). . . . . . . . . . . . . . . . . . . . . . . . 5.5GHz

• PNP Current Gain (hFE) . . . . . . . . . . . . . . . . . . . . . . . . 40

• PNP Early Voltage (V ) . . . . . . . . . . . . . . . . . . . . . . . 25V

A

• Noise Figure (50Ω) at 1.0GHz . . . . . . . . . . . . . . . . 3.5dB

• Collector-to-Collector Leakage. . . . . . . . . . . . . . . .<1pA

•Complete Isolation Between Transistors

•Pin Compatible with Industry Standard 3XXX Series Arrays

Applications

•VHF/UHF Amplifiers

•VHF/UHF Mixers

•IF Converters

•Synchronous Detectors

The HFA3046, HFA3096, HFA3127 and the HFA3128 are Ultra High Frequency Transistor Arrays that are fabricated from Harris Semiconductor’s complementary bipolar UHF-1 process. Each array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN transistors exhibit a fT of 8GHz while the PNP transistors provide a fT of 5.5GHz. Both types exhibit low noise (3.5dB), making them ideal for high frequency amplifier and mixer applications.

The HFA3046 and HFA3127 are all-NPN arrays while the HFA3128 has all PNP transistors. The HFA3096 is a NPNPNP combination. Access is provided to each of the terminals for the individual transistors for maximum application flexibility. Monolithic construction of these transistor arrays provides close electrical and thermal matching of the five transistors.

For PSPICE models, please request AnswerFAX document number 663046. Harris also provides an Application Note illustrating the use of these devices as RF amplifiers (request AnswerFAX document 99315).

Ordering Information

PART NUMBER

PACKAGE

 

 

HFA3046B

14 Lead Plastic SOIC (N)

 

 

HFA3096B, HFA3127B, HFA3128B

16 Lead Plastic SOIC (N)

 

 

HFA3046Y, HFA3096Y

Die

 

 

HFA3127Y, HFA3128Y

Die

 

 

Pinouts

HFA3046

TOP VIEW

1

 

14

2

Q1

13

 

 

 

Q5

3

 

12

4

Q2

11

 

5

 

10

 

 

Q4

6

 

9

7

Q3

8

 

 

HFA3096

TOP VIEW

1

2

Q1

 

3

4

5

Q2

6

7

Q3

8

16 NC

15

Q5

14

13

12

Q4

11

10

9

HFA3127

TOP VIEW

1

16

2

Q1

15

3

14

Q2

Q5

4

13

NC

5

12

6

11

7

10

Q3

Q4

8

9

HFA3128

TOP VIEW

1

16

2

Q1

15

3

14

Q2

Q5

4

13

NC

5

12

6

11

7

10

Q3

Q4

8

9

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures.

File Number 3076.6

 

Copyright © Harris Corporation 1995

9-16

 

 

 

Specifications HFA3046, HFA3096, HFA3127, HFA3128

Absolute Maximum Ratings

Collector to Emitter Voltage (Open Base). . . . . . . . . . . . . . . . . . 8.0V Collector to Base Voltage (Shorted Base) . . . . . . . . . . . . . . . 12.0V Emitter to Base Voltage (Reverse Bias) . . . . . . . . . . . . . . . . . . 5.5V Collector Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15.5mA Storage Temperature Range . . . . . . . . . . . . . . . . . -65oC to +150oC

Operating Temperature Range . . . . . . . . . . . . . . . . -55oC to +125oC Junction Temperature (Die) . . . . . . . . . . . . . . . . . . . . . . . . . +175oC

Junction Temperature (Plastic Package) . . . . . . . . . . . . . . . +150oC Lead Temperature (Soldering 10s) (Lead Tips Only. . . . . . . +300oC

Thermal Information

Thermal Resistance

θJA

Plastic 14 Lead SOIC Package . . . . . . . . . . . . . . . . . .

120oC/W

Plastic 16 Lead SOIC Package . . . . . . . . . . . . . . . . . .

115oC/W

Maximum Package Power Dissipation at +75oC

 

Plastic 14 Lead SOIC Package . . . . . . . . . . . . . . . . . . .

. . . 0.63W

Plastic 16 Lead SOIC Package . . . . . . . . . . . . . . . . . . .

. . . 0.66W

Any One Transistor . . . . . . . . . . . . . . . . . . . . . . . . . . . .

. . . 0.15W

Derating Factor Above +75oC

8.4mW/oC

Plastic 14 Lead SOIC Package . . . . . . . . . . . . . . . . . . .

Plastic 16 Lead SOIC Package . . . . . . . . . . . . . . . . . . .

8.7mW/oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Static NPN Characteristics at T = +25oC

 

 

 

 

 

 

 

 

A

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

DIE

 

 

SOIC

 

 

 

 

 

 

 

 

 

 

 

PARAMETERS

TEST CONDITIONS

MIN

TYP

MAX

MIN

TYP

MAX

UNITS

 

 

 

 

 

 

 

 

 

Collector-to-Base Breakdown

IC = 100μA, IE = 0

12

18

-

12

18

-

V

Voltage, V(BR)CBO

 

 

 

 

 

 

 

 

Collector-to-Emitter Break-

IC = 100μA, IB = 0

8

12

-

8

12

-

V

down Voltage, V(BR)CEO

 

 

 

 

 

 

 

 

Collector-to-Emitter Break-

IC = 100μA, Base Shorted to

10

20

-

10

20

-

V

down Voltage, V(BR)CES

Emitter

 

 

 

 

 

 

 

Emitter-to-Base Breakdown

IE = 10μA, IC = 0

5.5

6

-

5.5

6

-

V

Voltage, V(BR)EBO

 

 

 

 

 

 

 

 

Collector-Cutoff-Current, ICEO

VCE = 6V, IB = 0

-

2

100

-

2

100

nA

Collector-Cutoff-Current, ICBO

VCB = 8V, IE = 0

-

0.1

10

-

0.1

10

nA

Collector-to-Emitter Saturation

IC = 10mA, IB = 1mA

-

0.3

0.5

-

0.3

0.5

V

Voltage, VCE(SAT)

 

 

 

 

 

 

 

 

Base-to-Emitter Voltage, VBE

IC = 10mA

-

0.85

0.95

-

0.85

0.95

V

DC Forward-Current Transfer

IC = 10mA

40

70

-

40

70

-

 

Ratio, hFE

VCE = 2V

 

 

 

 

 

 

 

Early Voltage, VA

IC = 1mA, VCE = 3.5V

20

50

-

20

50

-

V

Base-to-Emitter Voltage Drift

IC = 10mA

-

-1.5

-

-

-1.5

-

mV/oC

Collector-to-Collector Leakage

 

-

1

-

-

1

-

pA

 

 

 

 

 

 

 

 

 

Dynamic NPN Characteristics at T = +25oC

 

 

 

 

 

 

 

 

A

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

DIE

 

 

SOIC

 

 

 

 

 

 

 

 

 

 

 

PARAMETERS

TEST CONDITIONS

MIN

TYP

MAX

MIN

TYP

MAX

UNITS

 

 

 

 

 

 

 

 

 

Noise Figure

f = 1.0GHz, VCE = 5V,

-

3.5

-

-

3.5

-

dB

 

IC = 5mA, ZS = 50Ω

 

 

 

 

 

 

 

fT Current Gain-Bandwidth

IC = 1mA, VCE = 5V

-

5.5

-

-

5.5

-

GHz

Product

 

 

 

 

 

 

 

 

IC = 10mA, VCE = 5V

-

8

-

-

8

-

GHz

 

 

 

 

 

 

 

 

 

 

Power Gain-Bandwidth

IC = 10mA, VCE = 5V

-

6

-

-

2.5

-

GHz

Product, fMAX

 

 

 

 

 

 

 

 

Base-to-Emitter Capacitance

VBE = -3V

-

200

-

-

500

-

fF

Collector-to-Base Capacitance

VCB = 3V

-

200

-

-

500

-

fF

 

 

 

 

 

 

 

 

 

9-17

Specifications HFA3046, HFA3096, HFA3127, HFA3128

Static PNP Characteristics at T = +25oC

 

 

 

 

 

 

 

 

 

A

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

DIE

 

 

SOIC

 

 

 

 

 

 

 

 

 

 

 

PARAMETERS

TEST CONDITIONS

MIN

TYP

MAX

MIN

TYP

MAX

UNITS

 

 

 

 

 

 

 

 

 

Collector-to-Base Breakdown

IC = -100μA, IE = 0

10

15

-

10

15

-

V

Voltage, V(BR)CBO

 

 

 

 

 

 

 

 

 

 

Collector-to-Emitter Break-

IC = -100μA, IB = 0

8

15

-

8

15

-

V

down Voltage, V(BR)CEO

 

 

 

 

 

 

 

 

 

 

Collector-to-Emitter Break-

IC = -100μA, Base Shorted to

10

15

-

10

15

-

V

down Voltage, V(BR)CES

Emitter

 

 

 

 

 

 

 

 

 

Emitter-to-Base Breakdown

IE = -10μA, IC = 0

4.5

5

-

4.5

5

-

V

Voltage, V(BR)EBO

 

 

 

 

 

 

 

 

 

 

Collector-Cutoff-Current, ICEO

VCE = -6V, IB = 0

-

2

100

-

2

100

nA

Collector-Cutoff-Current, ICBO

VCB = -8V, IE = 0

-

0.1

10

-

0.1

10

nA

Collector-to-Emitter Saturation

IC = -10mA, IB = -1mA

-

0.3

0.5

-

0.3

0.5

V

Voltage, VCE(SAT)

 

 

 

 

 

 

 

 

 

 

Base-to-Emitter Voltage, VBE

IC = -10mA

 

 

-

0.85

0.95

-

0.85

0.95

V

DC Forward-Current Transfer

IC = -10mA, VCE = -2V

25

40

-

25

40

-

 

Ratio, hFE

 

 

 

 

 

 

 

 

 

 

Early Voltage, VA

IC = -1mA, VCE = -3.5V

10

25

-

10

25

-

V

Base-to-Emitter Voltage Drift

IC = -10mA

 

 

-

-1.5

-

-

-1.5

-

mV/oC

Collector-to-Collector Leakage

 

 

 

-

1

-

-

1

-

pA

 

 

 

 

 

 

 

 

 

Dynamic PNP Characteristics at T = +25oC

 

 

 

 

 

 

 

 

A

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

DIE

 

 

SOIC

 

 

 

 

 

 

 

 

 

 

 

PARAMETERS

TEST CONDITIONS

MIN

TYP

MAX

MIN

TYP

MAX

UNITS

 

 

 

 

 

 

 

 

 

Noise Figure

f = 1.0GHz, VCE = -5V,

-

3.5

-

-

3.5

-

dB

 

IC = -5mA, ZS = 50Ω

 

 

 

 

 

 

 

fT Current Gain-Bandwidth

IC = -1mA, VCE = -5V

-

2

-

-

2

-

GHz

Product

 

 

 

 

 

 

 

 

 

 

IC = -10mA, VCE = -5V

-

5.5

-

-

5.5

-

GHz

 

Power Gain-Bandwidth

IC = -10mA, VCE = -5V

-

3

-

-

2

-

GHz

Product

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Base-to-Emitter Capacitance

VBE = 3V

 

 

-

200

-

-

500

-

fF

 

 

 

 

 

 

 

 

 

 

 

Collector-to-Base Capacitance

VCB = -3V

 

 

-

300

-

-

600

-

fF

 

 

 

 

 

 

 

 

 

Differential Pair Matching Characteristics for the HFA3046

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

DIE

 

 

SOIC

 

 

 

 

 

 

 

 

 

 

 

PARAMETERS

TEST CONDITIONS

MIN

TYP

MAX

MIN

TYP

MAX

UNITS

 

 

 

 

 

 

 

 

 

Input Offset Voltage

IC = 10mA, VCE = 5V

-

1.5

5.0

-

1.5

5.0

mV

 

 

 

 

 

 

 

 

 

Input Offset Current

IC = 10mA, VCE = 5V

-

5

25

-

5

25

μA

 

 

 

 

 

 

 

 

 

 

 

Input Offset Voltage TC

I = 10mA, V

CE

= 5V

-

0.5

-

-

0.5

-

μV/oC

 

C

 

 

 

 

 

 

 

 

S-Parameter and PSPICE model data is available from Harris Sales Offices.

9-18

HFA3046, HFA3096, HFA3127, HFA3128

Common Emitter S-Parameters of NPN 3μm x 50μm Transistor

FREQ. (Hz)

|S11|

PHASE(S11)

|S12|

PHASE(S12)

|S21|

PHASE(S21)

|S22|

PHASE(S22)

 

 

 

 

 

 

 

 

 

VCE = 5V and IC = 5mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1.0E+08

0.83

-11.78

1.41E-02

78.88

11.07

168.57

0.97

-11.05

 

 

 

 

 

 

 

 

 

2.0E+08

0.79

-22.82

2.69E-02

68.63

10.51

157.89

0.93

-21.35

 

 

 

 

 

 

 

 

 

3.0E+08

0.73

-32.64

3.75E-02

59.58

9.75

148.44

0.86

-30.44

 

 

 

 

 

 

 

 

 

4.0E+08

0.67

-41.08

4.57E-02

51.90

8.91

140.36

0.79

-38.16

 

 

 

 

 

 

 

 

 

5.0E+08

0.61

-48.23

5.19E-02

45.50

8.10

133.56

0.73

-44.59

 

 

 

 

 

 

 

 

 

6.0E+08

0.55

-54.27

5.65E-02

40.21

7.35

127.88

0.67

-49.93

 

 

 

 

 

 

 

 

 

7.0E+08

0.50

-59.41

6.00E-02

35.82

6.69

123.10

0.62

-54.37

 

 

 

 

 

 

 

 

 

8.0E+08

0.46

-63.81

6.27E-02

32.15

6.11

119.04

0.57

-58.10

 

 

 

 

 

 

 

 

 

9.0E+08

0.42

-67.63

6.47E-02

29.07

5.61

115.57

0.53

-61.25

 

 

 

 

 

 

 

 

 

1.0E+09

0.39

-70.98

6.63E-02

26.45

5.17

112.55

0.50

-63.96

 

 

 

 

 

 

 

 

 

1.1E+09

0.36

-73.95

6.75E-02

24.19

4.79

109.91

0.47

-66.31

 

 

 

 

 

 

 

 

 

1.2E+09

0.34

-76.62

6.85E-02

22.24

4.45

107.57

0.45

-68.37

 

 

 

 

 

 

 

 

 

1.3E+09

0.32

-79.04

6.93E-02

20.53

4.15

105.47

0.43

-70.19

 

 

 

 

 

 

 

 

 

1.4E+09

0.30

-81.25

7.00E-02

19.02

3.89

103.57

0.41

-71.83

 

 

 

 

 

 

 

 

 

1.5E+09

0.28

-83.28

7.05E-02

17.69

3.66

101.84

0.40

-73.31

 

 

 

 

 

 

 

 

 

1.6E+09

0.27

-85.17

7.10E-02

16.49

3.45

100.26

0.39

-74.66

 

 

 

 

 

 

 

 

 

1.7E+09

0.25

-86.92

7.13E-02

15.41

3.27

98.79

0.38

-75.90

 

 

 

 

 

 

 

 

 

1.8E+09

0.24

-88.57

7.17E-02

14.43

3.10

97.43

0.37

-77.05

 

 

 

 

 

 

 

 

 

1.9E+09

0.23

-90.12

7.19E-02

13.54

2.94

96.15

0.36

-78.12

 

 

 

 

 

 

 

 

 

2.0E+09

0.22

-91.59

7.21E-02

12.73

2.80

94.95

0.35

-79.13

 

 

 

 

 

 

 

 

 

2.1E+09

0.21

-92.98

7.23E-02

11.98

2.68

93.81

0.35

-80.09

 

 

 

 

 

 

 

 

 

2.2E+09

0.20

-94.30

7.25E-02

11.29

2.56

92.73

0.34

-80.99

 

 

 

 

 

 

 

 

 

2.3E+09

0.20

-95.57

7.27E-02

10.64

2.45

91.70

0.34

-81.85

 

 

 

 

 

 

 

 

 

2.4E+09

0.19

-96.78

7.28E-02

10.05

2.35

90.72

0.33

-82.68

 

 

 

 

 

 

 

 

 

2.5E+09

0.18

-97.93

7.29E-02

9.49

2.26

89.78

0.33

-83.47

 

 

 

 

 

 

 

 

 

2.6E+09

0.18

-99.05

7.30E-02

8.96

2.18

88.87

0.33

-84.23

 

 

 

 

 

 

 

 

 

2.7E+09

0.17

-100.12

7.31E-02

8.47

2.10

88.00

0.33

-84.97

 

 

 

 

 

 

 

 

 

2.8E+09

0.17

-101.15

7.31E-02

8.01

2.02

87.15

0.33

-85.68

 

 

 

 

 

 

 

 

 

2.9E+09

0.16

-102.15

7.32E-02

7.57

1.96

86.33

0.33

-86.37

 

 

 

 

 

 

 

 

 

3.0E+09

0.16

-103.11

7.32E-02

7.16

1.89

85.54

0.33

-87.05

 

 

 

 

 

 

 

 

 

9-19

HFA3046, HFA3096, HFA3127, HFA3128

Common Emitter S-Parameters of NPN 3μm x 50μm Transistor (Continued)

FREQ. (Hz)

|S11|

PHASE(S11)

|S12|

PHASE(S12)

|S21|

PHASE(S21)

|S22|

PHASE(S22)

 

 

 

 

 

 

 

 

 

VCE = 5V and IC = 10mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1.0E+08

0.72

-16.43

1.27E-02

75.41

15.12

165.22

0.95

-14.26

 

 

 

 

 

 

 

 

 

2.0E+08

0.67

-31.26

2.34E-02

62.89

13.90

152.04

0.88

-26.95

 

 

 

 

 

 

 

 

 

3.0E+08

0.60

-43.76

3.13E-02

52.58

12.39

141.18

0.79

-37.31

 

 

 

 

 

 

 

 

 

4.0E+08

0.53

-54.00

3.68E-02

44.50

10.92

132.57

0.70

-45.45

 

 

 

 

 

 

 

 

 

5.0E+08

0.47

-62.38

4.05E-02

38.23

9.62

125.78

0.63

-51.77

 

 

 

 

 

 

 

 

 

6.0E+08

0.42

-69.35

4.31E-02

33.34

8.53

120.37

0.57

-56.72

 

 

 

 

 

 

 

 

 

7.0E+08

0.37

-75.26

4.49E-02

29.47

7.62

116.00

0.51

-60.65

 

 

 

 

 

 

 

 

 

8.0E+08

0.34

-80.36

4.63E-02

26.37

6.86

112.39

0.47

-63.85

 

 

 

 

 

 

 

 

 

9.0E+08

0.31

-84.84

4.72E-02

23.84

6.22

109.36

0.44

-66.49

 

 

 

 

 

 

 

 

 

1.0E+09

0.29

-88.83

4.80E-02

21.75

5.69

106.77

0.41

-68.71

 

 

 

 

 

 

 

 

 

1.1E+09

0.27

-92.44

4.86E-02

20.00

5.23

104.51

0.39

-70.62

 

 

 

 

 

 

 

 

 

1.2E+09

0.25

-95.73

4.90E-02

18.52

4.83

102.53

0.37

-72.28

 

 

 

 

 

 

 

 

 

1.3E+09

0.24

-98.75

4.94E-02

17.25

4.49

100.75

0.35

-73.76

 

 

 

 

 

 

 

 

 

1.4E+09

0.22

-101.55

4.97E-02

16.15

4.19

99.16

0.34

-75.08

 

 

 

 

 

 

 

 

 

1.5E+09

0.21

-104.15

4.99E-02

15.19

3.93

97.70

0.33

-76.28

 

 

 

 

 

 

 

 

 

1.6E+09

0.20

-106.57

5.01E-02

14.34

3.70

96.36

0.32

-77.38

 

 

 

 

 

 

 

 

 

1.7E+09

0.20

-108.85

5.03E-02

13.60

3.49

95.12

0.31

-78.41

 

 

 

 

 

 

 

 

 

1.8E+09

0.19

-110.98

5.05E-02

12.94

3.30

93.96

0.31

-79.37

 

 

 

 

 

 

 

 

 

1.9E+09

0.18

-113.00

5.06E-02

12.34

3.13

92.87

0.30

-80.27

 

 

 

 

 

 

 

 

 

2.0E+09

0.18

-114.90

5.07E-02

11.81

2.98

91.85

0.30

-81.13

 

 

 

 

 

 

 

 

 

2.1E+09

0.17

-116.69

5.08E-02

11.33

2.84

90.87

0.30

-81.95

 

 

 

 

 

 

 

 

 

2.2E+09

0.17

-118.39

5.09E-02

10.89

2.72

89.94

0.29

-82.74

 

 

 

 

 

 

 

 

 

2.3E+09

0.16

-120.01

5.10E-02

10.50

2.60

89.06

0.29

-83.50

 

 

 

 

 

 

 

 

 

2.4E+09

0.16

-121.54

5.11E-02

10.13

2.49

88.21

0.29

-84.24

 

 

 

 

 

 

 

 

 

2.5E+09

0.16

-122.99

5.12E-02

9.80

2.39

87.39

0.29

-84.95

 

 

 

 

 

 

 

 

 

2.6E+09

0.15

-124.37

5.12E-02

9.49

2.30

86.60

0.29

-85.64

 

 

 

 

 

 

 

 

 

2.7E+09

0.15

-125.69

5.13E-02

9.21

2.22

85.83

0.29

-86.32

 

 

 

 

 

 

 

 

 

2.8E+09

0.15

-126.94

5.13E-02

8.95

2.14

85.09

0.29

-86.98

 

 

 

 

 

 

 

 

 

2.9E+09

0.15

-128.14

5.14E-02

8.71

2.06

84.36

0.29

-87.62

 

 

 

 

 

 

 

 

 

3.0E+09

0.14

-129.27

5.15E-02

8.49

1.99

83.66

0.29

-88.25

 

 

 

 

 

 

 

 

 

9-20

Источник: https://studfile.net/preview/16502805/