Материал: FA3046

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HFA3046, HFA3096, HFA3127, HFA3128

Common Emitter S-Parameters of PNP 3mm2 x 50mm2 Transistor

FREQ. (Hz)	\|S11\|	PHASE(S11)	\|S21\|	PHASE(S21)	\|S12\|	PHASE(S12)	\|S22\|	PHASE(S22)

VCE = -5V and IC = -5mA

1.0E+08	0.72	-16.65	10.11	166.77	1.66E-02	77.18	0.96	-10.76

2.0E+08	0.68	-32.12	9.44	154.69	3.10E-02	65.94	0.90	-20.38

3.0E+08	0.62	-45.73	8.57	144.40	4.23E-02	56.39	0.82	-28.25

4.0E+08	0.57	-57.39	7.68	135.95	5.05E-02	48.66	0.74	-34.31

5.0E+08	0.52	-67.32	6.86	129.11	5.64E-02	42.52	0.67	-38.81

6.0E+08	0.47	-75.83	6.14	123.55	6.07E-02	37.66	0.61	-42.10

7.0E+08	0.43	-83.18	5.53	118.98	6.37E-02	33.79	0.55	-44.47

8.0E+08	0.40	-89.60	5.01	115.17	6.60E-02	30.67	0.51	-46.15

9.0E+08	0.38	-95.26	4.56	111.94	6.77E-02	28.14	0.47	-47.33

1.0E+09	0.36	-100.29	4.18	109.17	6.91E-02	26.06	0.44	-48.15

1.1E+09	0.34	-104.80	3.86	106.76	7.01E-02	24.33	0.41	-48.69

1.2E+09	0.33	-108.86	3.58	104.63	7.09E-02	22.89	0.39	-49.05

1.3E+09	0.32	-112.53	3.33	102.72	7.16E-02	21.67	0.37	-49.26

1.4E+09	0.30	-115.86	3.12	101.01	7.22E-02	20.64	0.36	-49.38

1.5E+09	0.30	-118.90	2.92	99.44	7.27E-02	19.76	0.34	-49.43

1.6E+09	0.29	-121.69	2.75	98.01	7.32E-02	19.00	0.33	-49.44

1.7E+09	0.28	-124.24	2.60	96.68	7.35E-02	18.35	0.32	-49.43

1.8E+09	0.28	-126.59	2.47	95.44	7.39E-02	17.79	0.31	-49.40

1.9E+09	0.27	-128.76	2.34	94.29	7.42E-02	17.30	0.30	-49.38

2.0E+09	0.27	-130.77	2.23	93.19	7.45E-02	16.88	0.30	-49.36

2.1E+09	0.26	-132.63	2.13	92.16	7.47E-02	16.52	0.29	-49.35

2.2E+09	0.26	-134.35	2.04	91.18	7.50E-02	16.20	0.28	-49.35

2.3E+09	0.26	-135.96	1.95	90.24	7.52E-02	15.92	0.28	-49.38

2.4E+09	0.25	-137.46	1.87	89.34	7.55E-02	15.68	0.28	-49.42

2.5E+09	0.25	-138.86	1.80	88.48	7.57E-02	15.48	0.27	-49.49

2.6E+09	0.25	-140.17	1.73	87.65	7.59E-02	15.30	0.27	-49.56

2.7E+09	0.25	-141.39	1.67	86.85	7.61E-02	15.15	0.26	-49.67

2.8E+09	0.25	-142.54	1.61	86.07	7.63E-02	15.01	0.26	-49.81

2.9E+09	0.24	-143.62	1.56	85.31	7.65E-02	14.90	0.26	-49.96

3.0E+09	0.24	-144.64	1.51	84.58	7.67E-02	14.81	0.26	-50.13

9-21

HFA3046, HFA3096, HFA3127, HFA3128

Common Emitter S-Parameters of PNP 3mm2 x 50mm2 Transistor (Continued)

FREQ. (Hz)	\|S11\|	PHASE(S11)	\|S21\|	PHASE(S21)	\|S12\|	PHASE(S12)	\|S22\|	PHASE(S22)

VCE = -5V, IC = -10mA

1.0E+08	0.58	-23.24	13.03	163.45	1.43E-02	73.38	0.93	-13.46

2.0E+08	0.53	-44.07	11.75	149.11	2.58E-02	60.43	0.85	-24.76

3.0E+08	0.48	-61.50	10.25	137.78	3.38E-02	50.16	0.74	-33.10

4.0E+08	0.43	-75.73	8.88	129.12	3.90E-02	42.49	0.65	-38.83

5.0E+08	0.40	-87.36	7.72	122.49	4.25E-02	36.81	0.58	-42.63

6.0E+08	0.37	-96.94	6.78	117.33	4.48E-02	32.59	0.51	-45.07

7.0E+08	0.35	-104.92	6.01	113.22	4.64E-02	29.39	0.47	-46.60

8.0E+08	0.33	-111.64	5.39	109.85	4.76E-02	26.94	0.43	-47.49

9.0E+08	0.32	-117.36	4.87	107.05	4.85E-02	25.04	0.40	-47.97

1.0E+09	0.31	-122.27	4.44	104.66	4.92E-02	23.55	0.37	-48.18

1.1E+09	0.30	-126.51	4.07	102.59	4.97E-02	22.37	0.35	-48.20

1.2E+09	0.30	-130.21	3.76	100.76	5.02E-02	21.44	0.33	-48.11

1.3E+09	0.29	-133.46	3.49	99.14	5.06E-02	20.70	0.32	-47.95

1.4E+09	0.29	-136.33	3.25	97.67	5.09E-02	20.11	0.31	-47.77

1.5E+09	0.28	-138.89	3.05	96.33	5.12E-02	19.65	0.30	-47.58

1.6E+09	0.28	-141.17	2.87	95.10	5.15E-02	19.29	0.29	-47.39

1.7E+09	0.28	-143.21	2.70	93.96	5.18E-02	19.01	0.28	-47.23

1.8E+09	0.28	-145.06	2.56	92.90	5.21E-02	18.80	0.27	-47.09

1.9E+09	0.27	-146.73	2.43	91.90	5.23E-02	18.65	0.27	-46.98

2.0E+09	0.27	-148.26	2.31	90.95	5.26E-02	18.55	0.26	-46.91

2.1E+09	0.27	-149.65	2.20	90.05	5.28E-02	18.49	0.26	-46.87

2.2E+09	0.27	-150.92	2.10	89.20	5.30E-02	18.46	0.25	-46.87

2.3E+09	0.27	-152.10	2.01	88.37	5.33E-02	18.47	0.25	-46.90

2.4E+09	0.27	-153.18	1.93	87.59	5.35E-02	18.50	0.25	-46.97

2.5E+09	0.27	-154.17	1.86	86.82	5.38E-02	18.55	0.24	-47.07

2.6E+09	0.26	-155.10	1.79	86.09	5.40E-02	18.62	0.24	-47.18

2.7E+09	0.26	-155.96	1.72	85.38	5.42E-02	18.71	0.24	-47.34

2.8E+09	0.26	-156.76	1.66	84.68	5.45E-02	18.80	0.24	-47.55

2.9E+09	0.26	-157.51	1.60	84.01	5.47E-02	18.91	0.24	-47.76

3.0E+09	0.26	-158.21	1.55	83.35	5.50E-02	19.03	0.23	-48.00

9-22

HFA3046, HFA3096, HFA3127, HFA3128

Die Characteristics

PROCESS:

UHF-1
DIE DIMENSIONS:
53 x 52 x 19 ± 1mils
1340μm x 1320μm ± 25.4μm
METALLIZATION:
Type: Metal 1: AlCu(2%)/TiW	Type: Metal 2: AlCu(2%)
Thickness: Metal 1: 8kÅ ± 0.4kÅ	Thickness: Metal 2: 16kÅ ± 0.8kÅ
GLASSIVATION:
Type: Nitride
Thickness: 4kÅ ± 0.5kÅ
DIE ATTACH:
Material: Epoxy

WORST CASE CURRENT DENSITY:

1.39 x 105 A/cm2

Metallization Mask Layout

HFA3096, HFA3127, HFA3128


		2	1	16	15


	3					14


	4					13
1340μm	4					13


(53mils)
(53mils)	5					12




	6					11


		7	8	9	10


			1320μm
			1320μm
			(52mils)
		HFA3046


		2	1	14	13

	3					12


	4
1340μm	4


(53mils)
(53mils)	5					11




	6					10


		7	8		9


			1320μm
			1320μm
			(52mils)

Pad numbers correspond to package part pin out.

9-23

HFA3046, HFA3096, HFA3127, HFA3128

Typical Performance Curves

	25			IB = 200μA
(mA)	20			IB = 160μA
CURRENT	15			IB =120μA
				IB =120μA
COLLECTOR
COLLECTOR	5			IB = 80μA
	10
				IB = 40μA
	0	2	3	4	5
	1	2	3	4	5

COLLECTOR TO EMITTER VOLTAGE (V)

FIGURE 1. NPN COLLECTOR CURRENT vs COLLECTOR TO EMITTER VOLTAGE

	100m	VCE = 3V
COLLECTORCURRENT BASEANDCURRENT (A)	10m			IC
COLLECTORCURRENT BASEANDCURRENT (A)	100n
	1m				IB
	100μ
	10μ
	1μ
	10n
	1n	0.6	0.7	0.8	0.9	1.0
	0.5	0.6	0.7	0.8	0.9	1.0

BASE TO EMITTER VOLTAGE (V)

FIGURE 2. NPN COLLECTOR CURRENT AND BASE CURRENT TO EMITTER VOLTAGE


	160	VCE = 3V
		VCE = 3V



GAIN	140
	140
	120
	120
CURRENT	100
	100
	80
	80
DC	60
	60
	40
	40
	20
	20
	0
	1μ	10μ	100μ	1m	10m	100m

COLLECTOR CURRENT (A)

FIGURE 3. NPN DC CURRENT GAIN vs COLLECTOR CURRENT

	10.0
(GHz)	8.0	VCE = 3V
			VCE = 5V
PRODUCT
	6.0	VCE	= 1V

BANDWIDTH	4.0

GAIN	2.0

0	1.0	10	100
0.1

COLLECTOR CURRENT (mA)

FIGURE 4. NPN GAIN BANDWIDTH PRODUCT vs COLLECTOR CURRENT (UHF 3 x 50 WITH BOND PADS)

	-25
	-25					IB = -400μA
						IB = -400μA
(mA)

	-20						IB = -		320μA
CURRENT	-20

	-15					IB = -240μA
						IB = -240μA


COLLECTOR	-5					IB = -160μA


	-10
	-10
	0							IB = -80μA
								IB = -80μA




	0	-1	-2	-3	-4			-5

COLLECTOR TO EMITTER VOLTAGE (V)

FIGURE 5. PNP COLLECTOR CURRENT vs COLLECTOR TO EMITTER VOLTAGE

-100m

VCE = -3V

-10m

CURRENTCOLLECTOR CURRENTBASEAND(A)

-1m

-100μ

-10μ

-1μ

-100n

-10n

-1n

-0.5

-0.6

-0.7

-0.8

-0.9

-1.0

BASE TO EMITTER VOLTAGE (V)

FIGURE 6. PNP COLLECTOR CURRENT AND BASE CURRENT TO EMITTER VOLTAGE

9-24

HFA3046, HFA3096, HFA3127, HFA3128

Typical Performance Curves (Continued)

VCE = -3V

	160
GAIN	140
GAIN	120
	120
CURRENT	100
CURRENT	80
	80
DC	60
DC	40
	40
	20
	0	-10μ	-100μ	-1m	-10m	-100m
	-1μ	-10μ	-100μ	-1m	-10m	-100m

COLLECTOR CURRENT (A)

FIGURE 7. PNP DC CURRENT GAIN vs COLLECTOR CURRENT

(GHz)	5.0
(GHz)				VCE = -5V
PRODUCT	4.0			VCE = -3V
PRODUCT

BANDWIDTH	3.0			VCE = -1V
BANDWIDTH	2.0

GAIN
	1.0	-1.0	-10	-100
	-0.1	-1.0	-10	-100

COLLECTOR CURRENT (mA)

FIGURE 8. PNP GAIN BANDWIDTH PRODUCT vs COLLECTOR CURRENT (UHF 3 x 50 WITH BOND PADS)

9-25

Источник: https://studfile.net/preview/16502805/

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