Материал: tvs2
MOTOROLA
SEMICONDUCTOR
TECHNICAL DATA
SOT%23 Dual Monolithic
Common Anode Zener
Transient Voltage Suppressor
For ESD Protection
This dual monolithic silicon zener diode is designed for applications requiring transient overvoltage protection capability. It is intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and other applications. Its dual junction common anode design protects two separate lines using only one package. These devices are ideal for situations where board space is at a premium.
Specification Features:
•SOT-23 Package Allows Either Two Separate Unidirectional Configurations or a Single Bidirectional Configuration
•Peak Power Ð 24 Watts @ 1.0 ms (Unidirectional), per Figure 5 Waveform
•Maximum Clamping Voltage @ Peak Pulse Current
•Low Leakage < 5.0 μA
•ESD Rating of Class N (exceeding 16 kV) per the Human Body Model
Mechanical Characteristics:
•Void Free, Transfer-Molded, Thermosetting Plastic Case
•Corrosion Resistant Finish, Easily Solderable
•Package Designed for Optimal Automated Board Assembly
•Small Package Size for High Density Applications
•Available in 8 mm Tape and Reel
Use the Device Number to Order the 7 inch/3,000 Unit Reel
Replace ªT1º with ªT3º in the Device Number to Order the 13 inch/10,000 Unit Reel
WAFER FAB LOCATION: Phoenix, Arizona
ASSEMBLY/TEST LOCATION: Seremban, Malaysia
THERMAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
MMBZ5V6ALT1
ADDITIONAL VOLTAGES AVAILABLE
Motorola Preferred Device
SOT-23 DUAL
ZENER OVERVOLTAGE TRANSIENT SUPPRESSOR 5.6 VOLTS
24 WATTS PEAK POWER
3
1
2
CASE 318-07
STYLE 12
LOW PROFILE SOT-23
PLASTIC
1 
3
2 
PIN 1. CATHODE
2.CATHODE
3.ANODE
Characteristic |
Symbol |
Value |
Unit |
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Peak Power Dissipation @ 1.0 ms (1) |
Ppk |
24 |
Watts |
@ TA ≤ 25°C |
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Total Power Dissipation on FR-5 Board (2) @ TA = 25°C |
PD |
225 |
mW |
Derate above 25°C |
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1.8 |
mW/°C |
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Thermal Resistance Junction to Ambient |
RθJA |
556 |
°C/W |
Total Power Dissipation on Alumina Substrate (3) @ TA = 25°C |
PD |
300 |
mW |
Derate above 25°C |
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2.4 |
mW/°C |
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Thermal Resistance Junction to Ambient |
RθJA |
417 |
°C/W |
Junction and Storage Temperature Range |
TJ |
± 55 to +150 |
°C |
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Tstg |
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Lead Solder Temperature Ð Maximum |
TL |
260 |
°C |
(10 Second Duration) |
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(1)Non-repetitive current pulse per Figure 5 and derate above TA = 25°C per Figure 6.
(2)FR-5 = 1.0 x 0.75 x 0.62 in.
(3)Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola TVS/Zener Device Data |
24 Watt Peak Power Data Sheet |
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5-55 |
MMBZ5V6ALT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to pins 1 and 3 or Pins 2 and 3) (VF = 0.9 V Max @ IF = 10 mA)
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Breakdown Voltage |
Max Reverse |
Max Zener Impedance (6) |
Max |
Max Reverse |
Maximum |
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Leakage Current |
Voltage @ |
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Reverse |
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IRSM(5) |
Temperature |
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Surge |
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VZT(4) |
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(Clamping |
Coefficient of |
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Current |
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(V) |
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@ I ZT |
IR @ VR |
ZZT @ IZT |
ZZK @ IZK |
Voltage) |
VZ |
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IRSM(5) |
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Ω |
Ω |
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(mA) |
(uA) |
(V) |
( ) (mA) |
( ) |
(mA) |
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° |
Min |
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Nom |
Max |
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(A) |
VRSM |
(mV/ C) |
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(V) |
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5.32 |
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5.6(7) |
5.88 |
20 |
5.0 |
3.0 |
11 |
1600 |
0.25 |
3.0 |
8.0 |
1.26 |
(4)VZ measured at pulse test current IT at an ambient temperature of 25°C.
(5)Surge current waveform per Figure 5 and derate per Figure 6.
(6)ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current supplied. The specfied limits are IZ(AC) = 0.1 IZ(DC), with AC frequency = 1 kHz.
(7)Other voltages may be available upon request. Please contact your Motorola representative.
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TYPICAL CHARACTERISTICS
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8 |
VZ @ IT |
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(VOLTS) |
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7 |
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VOLTAGE |
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BIDIRECTIONAL |
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6 |
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BREAKDOWN |
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5 |
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UNIDIRECTIONAL |
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, |
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Z |
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V |
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4 |
0 |
50 |
100 |
150 |
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± 50 |
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TA, AMBIENT TEMPERATURE (°C) |
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Figure 1. Typical Breakdown Voltage
versus Temperature
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300 |
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280 |
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260 |
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(pF) |
240 |
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UNIDIRECTIONAL |
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C, CAPACITANCE |
220 |
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200 |
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180 |
BIDIRECTIONAL |
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160 |
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140 |
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120 |
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100 0 |
1 |
2 |
3 |
BIAS (V)
Figure 3. Typical Capacitance versus Bias Voltage
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10000 |
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CURRENT (nA) |
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REVERSE LEAKAGE |
1000 |
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R, |
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I |
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100 |
0 |
50 |
100 |
150 |
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± 50 |
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TA, AMBIENT TEMPERATURE (°C) |
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Figure 2. Typical Leakage Current
versus Temperature
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300 |
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(mW) |
250 |
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ALUMINA SUBSTRATE |
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200 |
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DISSIPATION |
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150 |
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, POWER |
100 |
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FR-5 BOARD |
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50 |
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D |
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P |
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0 |
25 |
50 |
75 |
100 |
125 |
150 |
175 |
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0 |
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TA, AMBIENT TEMPERATURE (°C) |
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Figure 4. Steady State Power Derating Curve
24 Watt Peak Power Data Sheet |
Motorola TVS/Zener Device Data |
5-56 |
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MMBZ5V6ALT1
TYPICAL CHARACTERISTICS
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PULSE WIDTH (tP) IS DEFINED |
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tr |
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AS THAT POINT WHERE THE |
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PEAK CURRENT DECAYS TO 50% |
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100 |
PEAK VALUE Ð I RSM |
OF IRSM. |
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tr |
≤ |
10 |
μ |
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(%) |
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IRSM |
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VALUE |
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HALF VALUE Ð |
2 |
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50 |
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tP |
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0 |
1 |
2 |
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3 |
4 |
0 |
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t, TIME (ms) |
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Figure 5. Pulse Waveform
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100 |
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RECTANGULAR |
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(W) |
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WAVEFORM, TA = 25°C |
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BIDIRECTIONAL |
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POWER |
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SURGE |
10 |
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UNIDIRECTIONAL |
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Ppk PEAK |
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1.0 |
1.0 |
10 |
100 |
1000 |
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0.1 |
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PW, PULSEWIDTH (ms)
Figure 7. Maximum Non-repetitive Surge
Power, Ppk versus PW
Power is defined as VRSM x IZ(pk) where VRSM is the clamping voltage at IZ(pk).
POWER |
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100 |
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90 |
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PEAKOF |
25= |
80 |
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C |
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° |
70 |
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IN % |
A |
60 |
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@ T |
50 |
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DERATING |
CURRENT |
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PULSE |
OR |
40 |
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PEAK |
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25 |
50 |
75 |
100 |
125 |
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175 |
200 |
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TA, AMBIENT TEMPERATURE (°C)
Figure 6. Pulse Derating Curve
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100 |
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(W) |
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RECTANGULAR |
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WAVEFORM, TA = 25°C |
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PEAK POWER |
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BIDIRECTIONAL |
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10 |
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Ppk(NOM), NNOMINAL |
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UNIDIRECTIONAL |
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1.0 |
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1.0 |
10 |
100 |
1000 |
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0.1 |
PW, PULSEWIDTH (ms)
Figure 8. Maximum Non-repetitive Surge
Power, Ppk(NOM) versus PW
Power is defined as VZ(NOM) x IZ(pk) where
VZ(NOM) is the nominal zener voltage measured at the low test current used for voltage classification.
Motorola TVS/Zener Device Data |
24 Watt Peak Power Data Sheet |
|
5-57 |
MMBZ5V6ALT1
TYPICAL COMMON ANODE APPLICATIONS
A dual junction common anode design in a SOT-23 package protects two separate lines using only one package. This adds flexibility and creativity to PCB design especially when
board space is at a premium. Two simplified examples of MMBZ5V6ALT1 TVS applications are illustrated below.
Computer Interface Protection
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A |
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KEYBOARD |
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B |
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TERMINAL |
I/O |
C |
FUNCTIONAL |
PRINTER |
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D |
DECODER |
ETC. |
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GND |
MMBZ5V6ALT1 |
Microprocessor Protection
VDD
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VGG |
ADDRESS BUS |
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RAM |
ROM |
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DATA BUS |
I/O |
CPU |
MMBZ5V6ALT1 |
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CLOCK |
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CONTROL BUS |
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GND |
MMBZ5V6ALT1 |
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24 Watt Peak Power Data Sheet |
Motorola TVS/Zener Device Data |
5-58 |
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MMBZ5V6ALT1
INFORMATION FOR USING THE SOT-23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface
between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process.
0.037
0.037 0.95
0.95
0.079
2.0
0.035
0.9
0.031 |
inches |
0.8mm
SOT-23
SOT-23 POWER DISSIPATION
The power dissipation of the SOT-23 is a function of the |
SOLDERING PRECAUTIONS |
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drain pad size. This can vary from the minimum pad size for |
The melting temperature of solder is higher than the rated |
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soldering to a pad size given for maximum power dissipation. |
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temperature of the device. When the entire device is heated |
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Power dissipation for a surface mount device is determined by |
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to a high temperature, failure to complete soldering within a |
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TJ(max), the maximum rated junction temperature of the die, |
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short time could result in device failure. Therefore, the |
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RθJA, the thermal resistance from the device junction to |
following items should always be observed in order to |
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ambient, and the operating temperature, TA. Using the values |
minimize the thermal stress to which the devices are |
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provided on the data sheet for the SOT-23 package, PD can |
subjected. |
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be calculated as follows: |
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• Always preheat the device. |
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PD = |
TJ(max) ± TA |
• The delta temperature between the preheat and soldering |
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should be 100°C or less.* |
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RθJA |
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The values for the equation are found in the maximum |
• When preheating and soldering, the temperature of the |
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leads and the case must not exceed the maximum |
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ratings table on the data sheet. Substituting these values into |
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temperature ratings as shown on the data sheet. When |
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the equation for an ambient temperature TA of 25°C, one can |
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using infrared heating with the reflow soldering method, |
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calculate the power dissipation of the device which in this case |
the difference shall be a maximum of 10°C. |
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is 225 milliwatts. |
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• The soldering temperature and time shall not exceed |
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° |
° |
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260°C for more than 10 seconds. |
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PD = 150 C ± 25 C = 225 milliwatts |
• When shifting from preheating to soldering, the maximum |
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556°C/W |
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temperature gradient shall be 5°C or less. |
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The 556°C/W for the SOT-23 package assumes the use of |
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• After soldering has been completed, the device should be |
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the recommended footprint on a glass epoxy printed circuit |
allowed to cool naturally for at least three minutes. |
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board to achieve a power dissipation of 225 milliwatts. There |
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Gradual cooling should be used as the use of forced |
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are other alternatives to achieving higher power dissipation |
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cooling will increase the temperature gradient and result |
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from the SOT-23 package. Another alternative would be to use |
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in latent failure due to mechanical stress. |
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a ceramic substrate or an aluminum core board such as |
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• Mechanical stress or shock should not be applied during |
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Thermal Clad . Using a board material such as Thermal Clad, |
cooling. |
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an aluminum core board, the power dissipation can be |
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* Soldering a device without preheating can cause excessive |
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doubled using the same footprint. |
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thermal shock and stress which can result in damage to the |
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device. |
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Motorola TVS/Zener Device Data |
24 Watt Peak Power Data Sheet |
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5-59 |
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